Биполярный транзистор 2SC3989N - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SC3989N
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 200 W
Макcимально допустимое напряжение коллектор-база (Ucb): 800 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 500 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 7 V
Макcимальный постоянный ток коллектора (Ic): 25 A
Предельная температура PN-перехода (Tj): 175 °C
Граничная частота коэффициента передачи тока (ft): 18 MHz
Ёмкость коллекторного перехода (Cc): 260 pf
Статический коэффициент передачи тока (hfe): 30
Корпус транзистора: TO264
2SC3989N Datasheet (PDF)
2sc3989.pdf
Ordering number:EN2556NPN Triple Diffused Planar Silicon Transistor2SC3989500V/25A Switching Regulator ApplicationsFeatures Package Dimensions High breakdown voltage, high reliability.unit:mm Fast switching speed (tf=0.1 s typ).2048B Adoption of MBIT process.[2SC3989]1 : Base2 : Collector3 : EmitterSANYO : TO-3PBLSpecificationsAbsolute Maximum Ratings
2sc3989.pdf
isc Silicon NPN Power Transistor 2SC3989DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 500V(Min)(BR)CEOHigh Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator and general purposeapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBO
2sc3988.pdf
Ordering number:EN2232BNPN Triple Diffused Planar Silicon Transistor2SC3988500V/25A Switching Regulator ApplicationsFeatures Package Dimensions High breakdown voltage, high reliability.unit:mm Fast switching speed.2022A Wide ASO.[2SC3988] Adoption of MBIT process.1 : Base2 : Collector3 : EmitterSANYO : TO-3PBSpecificationsAbsolute Maximum Ratings at
2sc3986.pdf
Ordering number:EN2220BNPN Planar Silicon Darlington Transistor2SC3986Driver ApplicationsApplications Package Dimensions Suitable for use in switching of L load (motorunit:mmdrivers, printer hammer drivers, relay drivers).2041A[2SC3986]Features High DC current gain. Large current capacity and wide ASO. On-chip Zener diode of 60 10V between collectorand
2sc3987.pdf
Ordering number:EN2221BNPN Planar Silicon Darlington Transistor2SC3987Driver ApplicationsApplications Package Dimensions Suitable for use in switching of L load (motorunit:mmdrivers, printer hammer drivers, relay drivers).2041A[2SC3987]Features High DC current gain. Large current capacity and wide ASO. On-chip Zener diode of 60 10V between collectorand
2sc3981.pdf
Power Transistors2SC3981, 2SC3981ASilicon NPN triple diffusion planar typeFor high breakdown voltage high-speed switchingUnit: mmFeatures15.0 0.3 5.0 0.2High-speed switching11.0 0.2 3.2High collector to base voltage VCBOWide area of safe operation (ASO) 3.2 0.1Satisfactory linearity of foward current transfer ratio hFEFull-pack package which can be installed
2sc3982.pdf
Power Transistors2SC3982, 2SC3982ASilicon NPN triple diffusion planar typeFor high breakdown voltage high-speed switchingUnit: mm 3.3 0.220.0 0.5 5.0 0.33.0FeaturesHigh-speed switchingHigh collector to base voltage VCBOWide area of safe operation (ASO) 1.5Satisfactory linearity of foward current transfer ratio hFE1.52.0 0.3Absolute Maximum Ratings (TC=2
2sc3980.pdf
Power Transistors2SC3980, 2SC3980ASilicon NPN triple diffusion planar typeFor high breakdown voltage high-speed switchingUnit: mmFeatures15.0 0.3 5.0 0.2High-speed switching11.0 0.2 3.2High collector to base voltage VCBOWide area of safe operation (ASO) 3.2 0.1Satisfactory linearity of foward current transfer ratio hFEFull-pack package which can be installed
2sc3988.pdf
Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC3988 DESCRIPTION With TO-220Fa package High breakdown voltage high reliability. Wide ASO (Safe Operating Area) Fast switching speed APPLICATIONS 500V/25A Switching Regulator Applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 EmitterFig.1 simplified ou
2sc3981.pdf
isc Silicon NPN Power Transistor 2SC3981DESCRIPTION Collector-Base Breakdown Voltage-: V = 900V(Min.)(BR)CBOWide Area of Safe OperationHigh Speed SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high speed switching applications.ABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE UNIT
2sc3980.pdf
isc Silicon NPN Power Transistor 2SC3980DESCRIPTION Collector-Base Breakdown Voltage-: V = 900V(Min.)(BR)CBOWide Area of Safe OperationHigh Speed SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high speed switching applications.ABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE UNIT
2sc3988.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3988 DESCRIPTION With TO-3PN package High breakdown voltage high reliability. Wide area of safe operation Fast switching speed APPLICATIONS 500V/25A switching regulator applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (
Другие транзисторы... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
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