Биполярный транзистор 2SC3995 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SC3995
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 180 W
Макcимально допустимое напряжение коллектор-база (Ucb): 1500 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 800 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 7 V
Макcимальный постоянный ток коллектора (Ic): 12 A
Предельная температура PN-перехода (Tj): 175 °C
Статический коэффициент передачи тока (hfe): 10
Корпус транзистора: TO264
2SC3995 Datasheet (PDF)
2sc3995.pdf
Ordering number:EN2508BNPN Triple Diffused Planar Silicon Transistor2SC3995Ultrahigh-Definition CRT DisplayHorizontal Deflection Output ApplicationsFeatures Package Dimensions High speed (tf=100ns typ).unit:mm High reliability (adoption of HVP process).2048B High breakdown voltage (VCBO=1500V).[2SC3995] Adoption of MBIT process.1 : Base2 : Collector3 :
2sc3995.pdf
isc Silicon NPN Power Transistor 2SC3995DESCRIPTIONHigh Switching SpeedHigh Breakdown Voltage-: V = 1500V(Min)(BR)CBOMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 1500 VCBO
2sc3996.pdf
Ordering number:EN2509CNPN Triple Diffused Planar Silicon Transistor2SC3996Ultrahigh-Definition CRT DisplayHorizontal Deflection Output ApplicationsFeatures Package Dimensions High speed (tf=100ns typ).unit:mm High reliability (adoption of HVP process).2048B High breakdown voltage (VCBO=1500V).[2SC3996] Adoption of MBIT process.1 : Base2 : Collector3 :
2sc3990.pdf
Ordering number:EN2234CNPN Triple Diffused Planar Silicon Transistor2SC3990500V/35A Switching Regulator ApplicationsFeatures Package Dimensions High breakdown voltage, high reliability.unit:mm Fast switching speed.2048B Wide ASO.[2SC3990] Adoption of MBIT process.1 : Base2 : Collector3 : EmitterSANYO : TO-3PBLSpecificationsAbsolute Maximum Ratings a
2sc3991.pdf
Ordering number:EN2836NPN Triple Diffused Planar Silicon Transistor2SC3991500V/50A Switching Regulator ApplicationsFeatures Package Dimensions High breakdown voltage, high reliability.unit:mm Fast switching speed (tf=0.1 s typ).2048B Wide ASO.[2SC3991] Adoption of MBIT process.1 : Base2 : Collector3 : EmitterSANYO : TO-3PBLSpecificationsAbsolute M
2sc3993.pdf
Ordering number:EN2236DNPN Triple Diffused Planar Silicon Transistor2SC3993800V/16A Switching Regulator ApplicationsFeatures Package Dimensions High breakdown voltage, high reliability.unit:mm Fast switching speed.2048B Wide ASO.[2SC3993] Adoption of MBIT process.1 : Base2 : Collector3 : EmitterSANYO : TO-3PBLSpecificationsAbsolute Maximum Ratings a
2sc3998.pdf
Ordering number:EN2732NPN Triple Diffused Planar Silicon Transistor2SC3998Ultrahigh-Definition CRT DisplayHorizontal Deflection Output ApplicationsFeatures Package Dimensions High speed (tf=100ns typ).unit:mm High breakdown voltage (VCBO=1500V).2048B High reliability (adoption of HVP process).[2SC3998] Adoption of MBIT process.20.03.35.02.03.40.6
2sc3994.pdf
Ordering number:EN2828NPN Triple Diffused Planar Silicon Transistor2SC3994800V/25A Switching Regulator ApplicationsFeatures Package Dimensions High breakdown voltage, high reliability.unit:mm Fast switching speed (tf=0.1 s typ).2048B Wide ASO.[2SC3994] Adoption of MBIT process.1 : Base2 : Collector3 : EmitterSANYO : TO-3PBLSpecificationsAbsolute M
2sc3992.pdf
Ordering number:EN2235DNPN Triple Diffused Planar Silicon Transistor2SC3992800V/12A Switching Regulator ApplicationsFeatures Package Dimensions High breakdown voltage, high reliability.unit:mm Fast switching speed.2048B Wide ASO.[2SC3992] Adoption of MBIT process.1 : Base2 : Collector3 : EmitterSANYO : TO-3PBLSpecificationsAbsolute Maximum Ratings a
2sc3997t7tl.pdf
2SC3997T7TLSilicon NPN Power TransistorDESCRIPTIONHigh Switching SpeedHigh Breakdown Voltage-: V = 1500V(Min)(BR)CBOAPPLICATIONSDesigned for horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 1500 VCBOV Collector-Emitter Voltage 800 VCEOV Emitter-Base Voltage 6 VEBOI Collector
2sc3998t7tl.pdf
2SC3998T7TLSilicon NPN Power TransistorDESCRIPTIONHigh Switching SpeedHigh Breakdown Voltage-: V = 1500V(Min)(BR)CBOAPPLICATIONSDesigned for horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 1500 VCBOV Collector-Emitter Voltage 800 VCEOV Emitter-Base Voltage 6 VEBOI Collector
2sc3997.pdf
SPTECH Product SpecificationSPTECH Silicon NPN Power Transistor 2SC3997DESCRIPTIONHigh Switching SpeedHigh Breakdown Voltage-: V = 1500V(Min)(BR)CBOAPPLICATIONSDesigned for horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 1500 VCBOV Collector-Emitter Voltage 800 VCEOV Emitter-Ba
2sc3998.pdf
SPTECH Product SpecificationSPTECH Silicon NPN Power Transistor 2SC3998DESCRIPTIONHigh Switching SpeedHigh Breakdown Voltage-: V = 1500V(Min)(BR)CBOAPPLICATIONSDesigned for horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 1500 VCBOV Collector-Emitter Voltage 800 VCEOV Emitter-Ba
2sc3998.pdf
2SC3998NPN Triple Diffused Planar Silicon TransistorDESCRIPTION High speed High breakdown voltage High reliability (adoption of HVP process).Collector Adoption of MBIT process.BasePINNING EmitterPIN DESCRIPTIONEC 1 Base BCollector;connected to Fig.1 simplified outline (TO-3PL) and symbol 2mounting base 3 Emitter
2sc3996.pdf
isc Silicon NPN Power Transistor 2SC3996DESCRIPTIONHigh Switching SpeedHigh Breakdown Voltage: V = 1500V(Min)(BR)CBOMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 1500 VCBO
2sc3990.pdf
isc Silicon NPN Power Transistor 2SC3990DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 500V(Min)(BR)CEOHigh Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator and general purposeapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBO
2sc3997.pdf
isc Silicon NPN Power Transistor 2SC3997DESCRIPTIONHigh Switching SpeedHigh Breakdown Voltage-: V = 1500V(Min)(BR)CBOMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 1500 VCBO
2sc3993.pdf
isc Product Specificationisc Silicon NPN Power Transistor 2SC3993DESCRIPTIONHigh Switching SpeedHigh Breakdown Voltage-: V = 1100V(Min)(BR)CBOMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONS800V/16A switching regulator applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltag
2sc3998.pdf
isc Silicon NPN Power Transistor 2SC3998DESCRIPTIONHigh Switching SpeedHigh Breakdown Voltage-: V = 1500V(Min)(BR)CBOMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 1500 VCBO
2sc3994.pdf
isc Silicon NPN Power Transistor 2SC3994DESCRIPTIONHigh Switching SpeedHigh Breakdown Voltage-: V = 1100V(Min)(BR)CBOMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 1100 VCBO
2sc3992.pdf
isc Silicon NPN Power Transistor 2SC3992DESCRIPTIONHigh Switching SpeedHigh Breakdown Voltage-: V = 1100V(Min)(BR)CBOMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 1100 VCBO
Другие транзисторы... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050