Биполярный транзистор 2SC3997
Даташит. Аналоги
Наименование производителя: 2SC3997
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 250
W
Макcимально допустимое напряжение коллектор-база (Ucb): 1500
V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 800
V
Макcимально допустимое напряжение эмиттер-база (Ueb): 7
V
Макcимальный постоянный ток коллектора (Ic): 20
A
Предельная температура PN-перехода (Tj): 175
°C
Статический коэффициент передачи тока (hfe): 20
Корпус транзистора:
TO264
- подбор биполярного транзистора по параметрам
2SC3997
Datasheet (PDF)
..2. Size:420K cn sptech
2sc3997.pdf 
SPTECH Product SpecificationSPTECH Silicon NPN Power Transistor 2SC3997DESCRIPTIONHigh Switching SpeedHigh Breakdown Voltage-: V = 1500V(Min)(BR)CBOAPPLICATIONSDesigned for horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 1500 VCBOV Collector-Emitter Voltage 800 VCEOV Emitter-Ba
..3. Size:217K inchange semiconductor
2sc3997.pdf 
isc Silicon NPN Power Transistor 2SC3997DESCRIPTIONHigh Switching SpeedHigh Breakdown Voltage-: V = 1500V(Min)(BR)CBOMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 1500 VCBO
0.1. Size:1278K cn sps
2sc3997t7tl.pdf 
2SC3997T7TLSilicon NPN Power TransistorDESCRIPTIONHigh Switching SpeedHigh Breakdown Voltage-: V = 1500V(Min)(BR)CBOAPPLICATIONSDesigned for horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 1500 VCBOV Collector-Emitter Voltage 800 VCEOV Emitter-Base Voltage 6 VEBOI Collector
8.1. Size:91K sanyo
2sc3996.pdf 
Ordering number:EN2509CNPN Triple Diffused Planar Silicon Transistor2SC3996Ultrahigh-Definition CRT DisplayHorizontal Deflection Output ApplicationsFeatures Package Dimensions High speed (tf=100ns typ).unit:mm High reliability (adoption of HVP process).2048B High breakdown voltage (VCBO=1500V).[2SC3996] Adoption of MBIT process.1 : Base2 : Collector3 :
8.2. Size:104K sanyo
2sc3990.pdf 
Ordering number:EN2234CNPN Triple Diffused Planar Silicon Transistor2SC3990500V/35A Switching Regulator ApplicationsFeatures Package Dimensions High breakdown voltage, high reliability.unit:mm Fast switching speed.2048B Wide ASO.[2SC3990] Adoption of MBIT process.1 : Base2 : Collector3 : EmitterSANYO : TO-3PBLSpecificationsAbsolute Maximum Ratings a
8.3. Size:112K sanyo
2sc3991.pdf 
Ordering number:EN2836NPN Triple Diffused Planar Silicon Transistor2SC3991500V/50A Switching Regulator ApplicationsFeatures Package Dimensions High breakdown voltage, high reliability.unit:mm Fast switching speed (tf=0.1 s typ).2048B Wide ASO.[2SC3991] Adoption of MBIT process.1 : Base2 : Collector3 : EmitterSANYO : TO-3PBLSpecificationsAbsolute M
8.4. Size:106K sanyo
2sc3993.pdf 
Ordering number:EN2236DNPN Triple Diffused Planar Silicon Transistor2SC3993800V/16A Switching Regulator ApplicationsFeatures Package Dimensions High breakdown voltage, high reliability.unit:mm Fast switching speed.2048B Wide ASO.[2SC3993] Adoption of MBIT process.1 : Base2 : Collector3 : EmitterSANYO : TO-3PBLSpecificationsAbsolute Maximum Ratings a
8.5. Size:85K sanyo
2sc3998.pdf 
Ordering number:EN2732NPN Triple Diffused Planar Silicon Transistor2SC3998Ultrahigh-Definition CRT DisplayHorizontal Deflection Output ApplicationsFeatures Package Dimensions High speed (tf=100ns typ).unit:mm High breakdown voltage (VCBO=1500V).2048B High reliability (adoption of HVP process).[2SC3998] Adoption of MBIT process.20.03.35.02.03.40.6
8.6. Size:99K sanyo
2sc3994.pdf 
Ordering number:EN2828NPN Triple Diffused Planar Silicon Transistor2SC3994800V/25A Switching Regulator ApplicationsFeatures Package Dimensions High breakdown voltage, high reliability.unit:mm Fast switching speed (tf=0.1 s typ).2048B Wide ASO.[2SC3994] Adoption of MBIT process.1 : Base2 : Collector3 : EmitterSANYO : TO-3PBLSpecificationsAbsolute M
8.7. Size:103K sanyo
2sc3992.pdf 
Ordering number:EN2235DNPN Triple Diffused Planar Silicon Transistor2SC3992800V/12A Switching Regulator ApplicationsFeatures Package Dimensions High breakdown voltage, high reliability.unit:mm Fast switching speed.2048B Wide ASO.[2SC3992] Adoption of MBIT process.1 : Base2 : Collector3 : EmitterSANYO : TO-3PBLSpecificationsAbsolute Maximum Ratings a
8.8. Size:90K sanyo
2sc3995.pdf 
Ordering number:EN2508BNPN Triple Diffused Planar Silicon Transistor2SC3995Ultrahigh-Definition CRT DisplayHorizontal Deflection Output ApplicationsFeatures Package Dimensions High speed (tf=100ns typ).unit:mm High reliability (adoption of HVP process).2048B High breakdown voltage (VCBO=1500V).[2SC3995] Adoption of MBIT process.1 : Base2 : Collector3 :
8.9. Size:1278K cn sps
2sc3998t7tl.pdf 
2SC3998T7TLSilicon NPN Power TransistorDESCRIPTIONHigh Switching SpeedHigh Breakdown Voltage-: V = 1500V(Min)(BR)CBOAPPLICATIONSDesigned for horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 1500 VCBOV Collector-Emitter Voltage 800 VCEOV Emitter-Base Voltage 6 VEBOI Collector
8.10. Size:170K cn sptech
2sc3998.pdf 
SPTECH Product SpecificationSPTECH Silicon NPN Power Transistor 2SC3998DESCRIPTIONHigh Switching SpeedHigh Breakdown Voltage-: V = 1500V(Min)(BR)CBOAPPLICATIONSDesigned for horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 1500 VCBOV Collector-Emitter Voltage 800 VCEOV Emitter-Ba
8.11. Size:634K cn xch
2sc3998.pdf 
2SC3998NPN Triple Diffused Planar Silicon TransistorDESCRIPTION High speed High breakdown voltage High reliability (adoption of HVP process).Collector Adoption of MBIT process.BasePINNING EmitterPIN DESCRIPTIONEC 1 Base BCollector;connected to Fig.1 simplified outline (TO-3PL) and symbol 2mounting base 3 Emitter
8.12. Size:211K inchange semiconductor
2sc3996.pdf 
isc Silicon NPN Power Transistor 2SC3996DESCRIPTIONHigh Switching SpeedHigh Breakdown Voltage: V = 1500V(Min)(BR)CBOMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 1500 VCBO
8.13. Size:217K inchange semiconductor
2sc3990.pdf 
isc Silicon NPN Power Transistor 2SC3990DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 500V(Min)(BR)CEOHigh Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator and general purposeapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBO
8.14. Size:192K inchange semiconductor
2sc3993.pdf 
isc Product Specificationisc Silicon NPN Power Transistor 2SC3993DESCRIPTIONHigh Switching SpeedHigh Breakdown Voltage-: V = 1100V(Min)(BR)CBOMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONS800V/16A switching regulator applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltag
8.15. Size:211K inchange semiconductor
2sc3998.pdf 
isc Silicon NPN Power Transistor 2SC3998DESCRIPTIONHigh Switching SpeedHigh Breakdown Voltage-: V = 1500V(Min)(BR)CBOMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 1500 VCBO
8.16. Size:216K inchange semiconductor
2sc3994.pdf 
isc Silicon NPN Power Transistor 2SC3994DESCRIPTIONHigh Switching SpeedHigh Breakdown Voltage-: V = 1100V(Min)(BR)CBOMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 1100 VCBO
8.17. Size:212K inchange semiconductor
2sc3992.pdf 
isc Silicon NPN Power Transistor 2SC3992DESCRIPTIONHigh Switching SpeedHigh Breakdown Voltage-: V = 1100V(Min)(BR)CBOMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 1100 VCBO
8.18. Size:211K inchange semiconductor
2sc3995.pdf 
isc Silicon NPN Power Transistor 2SC3995DESCRIPTIONHigh Switching SpeedHigh Breakdown Voltage-: V = 1500V(Min)(BR)CBOMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 1500 VCBO
Другие транзисторы... 2SA1803O
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.
History: BFS91A
| 2SD1504
| 2SA1802A
| HMBT1815
| 2N656A
| GT109I
