CEquivalentcircuitBBuilt-in Diode at CELow VCE (sat) 2SC4065(400)ESilicon NPN Epitaxial Planar Transistor (Complement to type 2SA1568)Application : DC Motor Driver and General PurposeExternal Dimensions FM20(TO220F) Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C)SymbolSymbol 2SC4065 Unit Conditions 2SC4065Unit0.24.20.210.

2SC4061KDatasheetChroma amplifier transistor (300V,100mA)lOutlinel SOT-346 Parameter Value SC-59 VCEO300VIC100mASMT3lFeatures lInner circuitl l1)High breakdown voltage.(BVCEO=300V)2)Low collector output capacitance. (Typ.3pF at VCB=30V)3)Ideal for chroma circuit.lApplicationlCHROMA OUTPUT, VIDEO SIGNAL AMPLIFI

Chroma amplifier transistor (300V, 0.1A) 2SC4061K / 2SC3415S / 2SC4015 Features Dimensions (Unit : mm) 1) High breakdown voltage. (BVCEO=300V) 2SC4061K2) Low collector output capacitance. (Typ. 3pF at VCB=30V) 3) Ideal for chroma circuit. 1.62.8(1) EmitterAbsolute maximum ratings (Ta=25C) (2) Base(3) CollectorParameter Symbol Limits Unit0.3Min.ROHM

LOW VCE (sat) 2SC4064Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1567)Application : DC Motor Driver and General PurposeExternal Dimensions FM20(TO220F)(Ta=25C) Absolute maximum ratings (Ta=25C) Electrical CharacteristicsSymbol 2SC4064 Unit Symbol Conditions 2SC4064 Unit0.24.20.210.1c0.52.8VCBO 50 V ICBO VCB=50V 100max AVCEO 50 V IEBO VEB

Product Specification Silicon NPN Power Transistor 2SC4060 DESCRIPTION High Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 450V(Min) High Switching Speed High Reliability APPLICATIONS Designed for switching regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNITVCBO Collector-Base Voltage 600 V VCEO Colle

LOW VCE (sat) 2SC4064Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1567)Application : DC Motor Driver and General PurposeExternal Dimensions FM20(TO220F)(Ta=25C) Absolute maximum ratings (Ta=25C) Electrical CharacteristicsSymbol 2SC4064 Unit Symbol Conditions 2SC4064 Unit0.24.20.210.1c0.52.8VCBO 50 V ICBO VCB=50V 100max AVCEO 50 V IEBO VEB

SPTECH Product SpecificationSPTECH Silicon NPN Power Transistor 2SC4064DESCRIPTIONLow Collector Saturation Voltage: V = 0.35V(Max)@ I =6ACE(sat) CCollector-Emitter Breakdown Voltage-: V = 50V (Min)(BR)CEOComplement to Type 2SA1567APPLICATIONSDesigned for use in DC motor driver and generalpurpose applicationsABSOLUTE MAXIMUM RATINGS(Ta=25)SYMBOL PARAMETER V

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC4064 DESCRIPTION Low Collector Saturation Voltage : VCE(sat)= 0.35V(Max)@ IC=6A Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V (Min) Complement to Type 2SA1567 APPLICATIONS Designed for use in DC motor driver and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4060 DESCRIPTION With TO-247 package Switching power transistor High voltage,high speed PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-247) and symbol 3 EmitterAbsolute maximum ratings(Tc=25) SYMBOL PARAMETER CONDITIONS VALUE U