2SC4087 - Даташиты. Аналоги. Основные параметры

Ordering number EN3171 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1575/2SC4080 High-Frequency Amplifier, Wide-Band Amplifier Applications Features Package Dimensions High fT. unit mm High breakdown voltage. 2038 Small reverse transfer capacitance and excellent [2SA1575/2SC4080] high-frequency characteristic. Adoption of FBET process. E Emitter C Collector

General purpose small signal amplifier (50V, 0.15A) 2SC4081UB Applications Dimensions (Unit mm) General purpose small signal amplifier UMT3F 2.0 0.9 0.32 Features 1) Low Cob. (3) Cob=2.0pF (Typ.) 2) Complements the 2SA1576UB. (1) (2) 0.13 0.65 0.65 1.3 Structure NPN silicon epitaxial planar transistor Each lead has same dimensions (1) Base (2) Emitt

2SC4081U3 HZG Datasheet General purpose small signal amplifier(50V, 150mA) AEC-Q101 Qualified lOutline l SOT-323 Parameter Value SC-70 VCEO 50V IC 150mA UMT3 lFeatures lInner circuit l l 1)Low Cob.Cob=2.0pF(Typ.) 2)Complements the 2SA1576U3 HZG. lApplication l GENERAL PURPOSE SMALL SIGNAL AMPLIFIER lPackaging specifications l P

High-Frequency Amplifier Transistor (20V, 50mA, 1.5GHz) 2SC5661 / 2SC4725 / 2SC4082 / 2SC3837K Features Dimensions (Unit mm) 1) High transition frequency. (Typ. fT = 1.5GHz) 2SC5661 2) Small rbb Cc and high gain. (Typ. 6ps) 3) Small NF. (1) Base Packaging specifications and hFE ROHM VMT3 (2) Emitter Type 2SC5661 2SC4725 2SC4082 2SC3837K (3) Collector Package

General purpose transistor (50V, 0.15A) 2SC2412K / 2SC4081 / 2SC4617 / 2SC5658 / 2SC1740S Features Dimensions (Unit mm) 1. Low Cob. Cob=2.0pF (Typ.)Cob=2.0pF (Typ.) 2SC2412K 2SC4081 2SC4617 2. Complements the 2SA1037AK / 2SA1576A / 2SA1774H / 2SA2029 / 2SA933AS. (1) (2) (3) 1.25 1.6 0.8 2.1 2.8 1.6 Structure Epitaxial planar type 0.1Min. 0.1Min. 0.3Min. NPN

2SC4083 Datasheet High-Frequency Amplifier Transistor (11V, 50mA, 3.2GHz) lOutline l SOT-323 Parameter Value SC-70 VCEO 11V IC 50mA UMT3 lFeatures lInner circuit l l 1)High transition frequency.(Typ.fT=3.2GHz) 2)Small rbb' Cc and high gain.(Typ.4ps) 3)Small NF lApplication l UHF/VHF

High-Frequency Amplifier Transistor (20V, 50mA, 1.5GHz) 2SC5661 / 2SC4725 / 2SC4082 / 2SC3837K Features Dimensions (Unit mm) 1) High transition frequency. (Typ. fT = 1.5GHz) 2SC5661 2) Small rbb Cc and high gain. (Typ. 6ps) 3) Small NF. (1) Base Packaging specifications and hFE ROHM VMT3 (2) Emitter Type 2SC5661 2SC4725 2SC4082 2SC3837K (3) Collector Package

2SC5658 / 2SC4617EB / 2SC4617 2SC4081UB / 2SC4081U3 / 2SC2412K Datasheet General purpose small signal amplifier (50V, 150mA) lOutline l Parameter Value SC-105AA SOT-416FL VCEO 50V IC 150mA 2SC5658 2SC4617EB (VMT3) (EMT3F) lFeatures SOT-416 SOT-323FL l 1)Low Cob.Cob=2.0pF(Typ.) 2)Complements the 2SA2029/ 2SC4617 2SC4081UB 2SA1774EB/2SA

2SC5658 / 2SC4617EB / 2SC4617 2SC4081UB / 2SC4081 / 2SC2412K Datasheet General purpose small signal amplifier (50V, 150mA) lOutline l Parameter Value SC-105AA SOT-416FL VCEO 50V IC 150mA 2SC5658 2SC4617EB (VMT3) (EMT3F) lFeatures SOT-416 SOT-323FL l 1)Low Cob.Cob=2.0pF(Typ.) 2)Complements the 2SA2029/ 2SC4617 2SC4081UB 2SA1774EB/2SA17

High-Frequency Amplifier Transistor(11V, 50mA, 3.2GHz) 2SC5662 / 2SC4726 /2SC4083 / 2SC3838K Features Dimensions (Unit mm) 1) High transition frequency. (Typ. fT= 3.2GHz) 2SC5662 1.2 2) Small rbb Cc and high gain. (Typ. 4ps) 0.32 3) Small NF. (3) (1)(2) 0.22 0.13 0.4 0.4 0.5 (1) Base 0.8 (2) Emitter (3) Collector ROHM VMT3 Packaging specifications and

2SC4081-A MCC Micro Commercial Components TM 2SC4081-B 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 2SC4081-C Phone (818) 701-4933 Fax (818) 701-4939 Features Lead Free Finish/RoHS Compliant ("P" Suffix designates NPN Silicon RoHS Compliant. See ordering information) Low Cob . Cob=2.0pF(Typ) Epitaxial Transistors Complementary to 2SC157

2SC4081-A MCC Micro Commercial Components TM 2SC4081-B 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 2SC4081-C Phone (818) 701-4933 Fax (818) 701-4939 Features Lead Free Finish/RoHS Compliant ("P" Suffix designates NPN Silicon RoHS Compliant. See ordering information) Low Cob . Cob=2.0pF(Typ) Epitaxial Transistors Complementary to 2SC157

2SC4081 Features Low Cob Complementary to 2SC1576A Halogen Free. Green Device (Note 1) NPN Silicon Moisture Sensitivity Level 1 Epoxy Meets UL 94 V-0 Flammability Rating Epitaxial Transistors Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. See Ordering Information) Maximum Ratings @ 25 C Unless Otherwise Specified Operating

2SC4081-A MCC Micro Commercial Components TM 2SC4081-B 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 2SC4081-C Phone (818) 701-4933 Fax (818) 701-4939 Features Lead Free Finish/RoHS Compliant ("P" Suffix designates NPN Silicon RoHS Compliant. See ordering information) Low Cob . Cob=2.0pF(Typ) Epitaxial Transistors Complementary to 2SC157

2SC4081RT1 General Purpose Amplifier Transistor NPN Surface Mount http //onsemi.com Features Moisture Sensitivity Level 1 COLLECTOR Pb-Free Package is Available 3 MAXIMUM RATINGS (TA = 25 C) Rating Symbol Value Unit Collector-Base Voltage V(BR)CBO 60 Vdc Collector-Emitter Voltage V(BR)CEO 50 Vdc 1 2 BASE EMITTER Emitter-Base Voltage V(BR)EBO 7.0 Vdc Collector Current

2SC4081F 0.15A , 60V NPN Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-323 FEATURES Low Cob. Cob=2.0pF (Typ.) Excellent hFE linearity A L Complementary to 2SA1576A 3 3 Top View C B 1 1 2 2 K E CLASSIFICATION OF hFE D H J Product-Rank 2SC4081F-Q 2SC4081F-R 2SC4081F-S F G

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors SOT-323 2SC4081 TRANSISTOR (NPN) FEATURES 1. BASE 2. EMITTER Excellent hFE linearity 3. COLLECTOR Complements the 2A1576A MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO

2SC4081 TRANSISTOR (NPN) SOT-323 FEATURES Excellent hFE linearity Complements the 2A1576A 1. BASE 2. EMITTER MAXIMUM RATINGS (TA=25 unless otherwise noted) 3. COLLECTOR Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 7 V IC Collector Current -Continuous 150 mA PC Collector Power Dissipat

2SC4081 SOT-323 Transistor(NPN) 1. BASE SOT-323 2. EMITTER 3. COLLECTOR Features Excellent hFE linearity Complements the 2A1576A MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V Dimensions in inches and (millimeters) VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 7 V IC Collector Current

2SC4081 General Purpose Transistor COLLECTOR 3 3 NPN Silicon P b Lead(Pb)-Free 1 1 2 BASE 2 FEATURES SOT-323(SC-70) EMITTER Excellent hFE linearity Complements the 2A1576A MAXIMUM RATINGS (TA=25 unless otherwise noted) Parameter Symbol Value Units Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO V 50 7 V Emitter-Base Voltage VEBO Collector Current -C

2SC4083 NPN Silicon Transistor 3 P b Lead(Pb)-Free 1 2 1. BASE FEATURES 2. EMITTER 3. COLLECTOR * Radio frequency amplifier * High transition frequency SOT-323(SC-70) * High gain with low collector-to base time constant * Low noise (NF) * Marking 1D ( T =25 C unless otherwise noted) Maximum Ratings A Rating Symbol Value Unit VCBO Collector-Base Voltage 20 V VCEO Collecto

FM120-M WILLAS THRU 2SC4081xT1 SOT-323 Plastic-Encapsulate Transistors FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Product Package outline Features Batch process design, excellent power dissipation offers TRANSISTOR (NPN) better reverse leakage current and thermal resistance. SOD-123H Low profile surface mounted appli

2SC4081W(BR3DG4081W) Rev.C Feb.-2015 DATA SHEET / Descriptions SOT-323 NPN Silicon NPN transistor in a SOT-323 Plastic Package. / Features Low Cob. / Applications General amplifier. / Equivalent Circuit / Pinning 3 2 1 PIN1 Emit

LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon L2SC4081QT1G Series FEATURE Low Cob,Cob=2pF(Typ.). S-L2SC4081QT1G Series Epitaxial planar type. PNP complement L2SA1576A We declare that the material of product compliance with RoHS requirements. 3 S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101

LESHAN RADIO COMPANY, LTD. High-Frequency Amplifier L2SC4083NT1G Transistor Series We declare that the material of product compliance with RoHS requirements. S-L2SC4083NT1G S- Prefix for Automotive and Other Applications Requiring Unique Site Series and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. Ordering Information Device Marking Shipping L2SC4083NT1G 3000

LESHAN RADIO COMPANY, LTD. High-Frequency Amplifier Transistor L2SC4083NWT1G We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site S-L2SC4083NWT1G and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. 3 1 Ordering Information 2 Device Marking Shipping L2SC4083NWT1G

LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon L2SC4081QT1G Series FEATURE Low Cob,Cob=2pF(Typ.). S-L2SC4081QT1G Series Epitaxial planar type. PNP complement L2SA1576A 3 We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101

LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon L2SC4081QT1G Series FEATURE Low Cob,Cob=2pF(Typ.). S-L2SC4081QT1G Series Epitaxial planar type. PNP complement L2SA1576A We declare that the material of product compliance with RoHS requirements. 3 S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101

LESHAN RADIO COMPANY, LTD. High-Frequency Amplifier Transistor L2SC4083PWT1G We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site S-L2SC4083PWT1G and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. 3 1 Ordering Information 2 Device Marking Shipping L2SC4083PWT1G

LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon L2SC4081QT1G Series FEATURE Low Cob,Cob=2pF(Typ.). S-L2SC4081QT1G Series Epitaxial planar type. PNP complement L2SA1576A 3 We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101

LESHAN RADIO COMPANY, LTD. High-Frequency Amplifier Transistor L2SC4083QWT1G We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site S-L2SC4083QWT1G and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. 3 1 Ordering Information 2 Device Marking Shipping L2SC4083QWT1G

LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon L2SC4081QT1G Series FEATURE Low Cob,Cob=2pF(Typ.). S-L2SC4081QT1G Series Epitaxial planar type. PNP complement L2SA1576A We declare that the material of product compliance with RoHS requirements. 3 S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101

LESHAN RADIO COMPANY, LTD. High-Frequency Amplifier Transistor L2SC4083PWT1G We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site S-L2SC4083PWT1G and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. 3 1 Ordering Information 2 Device Marking Shipping L2SC4083PWT1G

SMD Type Transistors NPN Transistors 2SC4080 1.70 0.1 Features High fT. High breakdown voltage. Complementary to 2SA1575 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 200 Collector - Emitter Voltage VCEO 200 V Emitter - Base Voltage VEBO 4 Collector Curren

SMD Type Transistors NPN Transistors 2SC4081 Features Low Cob. Cob=2.0pF (Typ.) Complementary to 2SA1576A 1 Base 2 Emitter 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector - Emitter Voltage VCEO 50 V Emitter - Base Voltage VEBO 7 Collector Current - Continuous IC 150 mA Collector Power D

2SC4083PWT1G o Absolute maximum ratings (Ta=25 C) Symbol Limits Unit Parameter 3 COLLECTOR Collector-base voltage VCBO 20 V VCEO 11 V Collector-emitter voltage 1 Emitter-base voltage VEBO 3 V BASE Collector current IC 50 mA Collector power dissipation PC 0.15 W 2 o Junction temperature EMITTER T 150 C j o Storage temperature Tstg - 55 +150 C Ordering Information D