2SC4103 - Даташиты. Аналоги. Основные параметры

Ordering number EN3172 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1580/2SC4104 High-Definition CRT Display Applications Features Package Dimensions High fT. unit mm Small reverse transfer capacitance. 2018A Adoption of FBET process. [2SA1580/2SC4104] C Collector B Base E Emitter ( ) 2SA1580 SANYO CP Specifications Absolute Maximum Ratings at Ta = 25

Ordering number EN2471A NPN Triple Diffused Planar Silicon Transistor 2SC4106 400V/7A Switching Regulator Applications Features Package Dimensions High breakdown voltage and high reliability. unit mm Fast switching speed. 2010C Wide ASO. [2SC4106] Adoption of MBIT process. 10.2 4.5 3.6 5.1 1.3 1.2 1 Base 0.8 0.4 2 Collector 1 2 3 3 Emitter JEDEC T

Ordering number EN2473A NPN Triple Diffused Planar Silicon Transistor 2SC4108 400V/12A Switching Regulator Applications Features Package Dimensions High breakdown voltage and high reliability. unit mm Fast switching speed. 2022A Wide ASO. [2SC4108] Adoption of MBIT process. 15.6 3.2 4.8 14.0 2.0 1.6 1.4 2.0 0.6 1.0 1 2 3 1 Base 0.6 2 Collector 3 E

Ordering number EN2472A NPN Triple Diffused Planar Silicon Transistor 2SC4107 400V/10A Switching Regulator Applications Features Package Dimensions High breakdown voltage and high reliability. unit mm Fast switching speed. 2010C Wide ASO. [2SC4107] Adoption of MBIT process. 10.2 4.5 3.6 5.1 1.3 1.2 1 Base 0.8 0.4 2 Collector 1 2 3 3 Emitter JEDEC

Ordering number EN2474A NPN Triple Diffused Planar Silicon Transistor 2SC4109 400V/16A Switching Regulator Applications Features Package Dimensions High breakdown voltage and high reliability. unit mm Fast switching speed. 2022A Wide ASO. [2SC4109] Adoption of MBIT process. 15.6 3.2 4.8 14.0 2.0 1.6 1.4 2.0 0.6 1.0 1 2 3 1 Base 0.6 2 Collector 3 E

Ordering number EN2470A NPN Triple Diffused Planar Silicon Transistor 2SC4105 400V/4A Switching Regulator Applications Features Package Dimensions High breakdown voltage and high reliability. unit mm Fast switching speed. 2010C Wide ASO. [2SC4105] Adoption of MBIT process. 10.2 4.5 3.6 5.1 1.3 1.2 0.8 1 Base 0.4 2 Collector 1 2 3 3 Emitter JEDEC TO

2SC4102 / 2SC3906K Datasheet High-voltage Amplifier Transistor (120V, 50mA) lOutline l Parameter Value SOT-323 SOT-346 VCEO 120V IC 50mA 2SC4102 2SC3906K (UMT3) (SMT3) lFeatures lInner circuit l l 1)High breakdown voltage. (BVCEO=120V) 2)Complements the 2SA1579/2SA1514K.

2SC4102 / 2SC3906K 2SC4102FRA / 2SC3906KFRA Datasheet NPN 50mA 120V High Voltage Amplifier transistors AEC-Q101 Qualified lOutline UMT3 SMT3 Parameter Value Collector Collector VCEO 120V Base Base IC 50mA Emitter Emitter 2SC3906K 2SC4102FRA 2SC3906KFRA 2SC4102 SOT-346 (SC-59) SOT-323 (SC-70) lFeatures 1) High Breakdown Voltage (VCEO=120V). 2) Complementary PNP Types 2

2SC4102 / 2SC3906K / 2SC2389S Transistors High-voltage Amplifier Transistor (120V, 50mA) 2SC4102 / 2SC3906K / 2SC2389S External dimensions (Unit mm) Features 1) High breakdown voltage. (BVCEO = 120V) 2SC4102 2) Complements the 2SA1579 / 2SA1514K / 2SA1038S. 1.25 Absolute maximum ratings (Ta=25 C) 2.1 Parameter Symbol Limits Unit Collector-base voltage VCBO 120 V C

High-voltage Amplifier Transistor (120V, 50mA) 2SC4102 / 2SC3906K Features Dimensions (Unit mm) 1) High breakdown voltage. (BVCEO = 120V) 2SC4102 2) Complements the 2SA1579 / 2SA1514K 1.25 Absolute maximum ratings (Ta=25 C) 2.1 Parameter Symbol Limits Unit Collector-base voltage VCBO 120 V Collector-emitter voltage VCEO 120 V 0.1Min. Emitter-base voltage VEBO 5 V

2SC4102 TRANSISTOR (NPN) FEATURES SOT 323 High Breakdown Voltage Complements the 2SA1579 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage 120 V CBO 1. BASE V Collector-Emitter Voltage 120 V 2. EMITTER CEO 3. COLLECTOR V Emitter-Base Voltage 5 V EBO I Collector Current 50 mA C P Collector Power Dissipat

SMD Type Transistors NPN Transistors 2SC4104 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 Features High fT Small reverse transfer capacitance 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 Complementary to 2SA1580 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 70 Co

SMD Type Transistors NPN Transistors 2SC4102 Features High Breakdown Voltage Complementary to 2SA1579 1 Base 2 Emitter 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 120 Collector - Emitter Voltage VCEO 120 V Emitter - Base Voltage VEBO 5 Collector Current - Continuous IC 50 mA Collector Current -

isc Silicon NPN Power Transistor 2SC4106 DESCRIPTION High Collector-Emitter Breakdown Voltage V = 400V(Min.) (BR)CEO High Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator applications ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT V

isc Silicon NPN Power Transistor 2SC4108 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 400V(Min) (BR)CEO High Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBO

isc Silicon NPN Power Transistor 2SC4107 DESCRIPTION High Collector-Emitter Breakdown Voltage V = 400V(Min.) (BR)CEO High Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator applications ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT V

isc Silicon NPN Power Transistor 2SC4109 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 400V(Min) (BR)CEO High Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBO

isc Silicon NPN Power Transistor 2SC4105 DESCRIPTION High Collector-Emitter Breakdown Voltage V = 400V(Min.) (BR)CEO High Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator applications ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT V