Справочник транзисторов. 2SC4107N

 

Биполярный транзистор 2SC4107N - описание производителя. Основные параметры. Даташиты.

Наименование производителя: 2SC4107N

Тип материала: Si

Полярность: NPN

Максимальная рассеиваемая мощность (Pc): 60 W

Макcимально допустимое напряжение коллектор-база (Ucb): 500 V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 400 V

Макcимально допустимое напряжение эмиттер-база (Ueb): 7 V

Макcимальный постоянный ток коллектора (Ic): 10 A

Предельная температура PN-перехода (Tj): 150 °C

Граничная частота коэффициента передачи тока (ft): 20 MHz

Ёмкость коллекторного перехода (Cc): 120 pf

Статический коэффициент передачи тока (hfe): 60

Корпус транзистора: TO220

Аналоги (замена) для 2SC4107N

 

 

2SC4107N Datasheet (PDF)

3.1. 2sc4107.pdf Size:93K _sanyo

2SC4107N
2SC4107N

Ordering number:EN2472A NPN Triple Diffused Planar Silicon Transistor 2SC4107 400V/10A Switching Regulator Applications Features Package Dimensions High breakdown voltage and high reliability. unit:mm Fast switching speed. 2010C Wide ASO. [2SC4107] Adoption of MBIT process. 10.2 4.5 3.6 5.1 1.3 1.2 1 : Base 0.8 0.4 2 : Collector 1 2 3 3 : Emitter JEDEC : TO-220A

3.2. 2sc4107.pdf Size:142K _inchange_semiconductor

2SC4107N
2SC4107N

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4107 DESCRIPTION · ·With TO-220C package ·High breakdown voltage and high reliability ·Fast switching speed. ·Wide area of safe operation APPLICATIONS ·400V/10A switching regulator applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maxi

 4.1. 2sc4102fra.pdf Size:1329K _update

2SC4107N
2SC4107N

2SC4102 / 2SC3906K 2SC4102FRA / 2SC3906KFRA Datasheet NPN 50mA 120V High Voltage Amplifier transistors AEC-Q101 Qualified lOutline UMT3 SMT3 Parameter Value Collector Collector VCEO 120V Base Base IC 50mA Emitter Emitter 2SC3906K 2SC4102FRA 2SC3906KFRA 2SC4102 SOT-346 (SC-59) SOT-323 (SC-70) lFeatures 1) High Breakdown Voltage (VCEO=120V). 2) Complementary PNP Types : 2

4.2. 2sc4104.pdf Size:19K _sanyo

2SC4107N
2SC4107N

Ordering number:EN3172 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1580/2SC4104 High-Definition CRT Display Applications Features Package Dimensions High fT. unit:mm Small reverse transfer capacitance. 2018A Adoption of FBET process. [2SA1580/2SC4104] C : Collector B : Base E : Emitter ( ) : 2SA1580 SANYO : CP Specifications Absolute Maximum Ratings at Ta = 25?C Para

 4.3. 2sc4105.pdf Size:92K _sanyo

2SC4107N
2SC4107N

Ordering number:EN2470A NPN Triple Diffused Planar Silicon Transistor 2SC4105 400V/4A Switching Regulator Applications Features Package Dimensions High breakdown voltage and high reliability. unit:mm Fast switching speed. 2010C Wide ASO. [2SC4105] Adoption of MBIT process. 10.2 4.5 3.6 5.1 1.3 1.2 0.8 1 : Base 0.4 2 : Collector 1 2 3 3 : Emitter JEDEC : TO-220AB

4.4. 2sc4106.pdf Size:92K _sanyo

2SC4107N
2SC4107N

Ordering number:EN2471A NPN Triple Diffused Planar Silicon Transistor 2SC4106 400V/7A Switching Regulator Applications Features Package Dimensions High breakdown voltage and high reliability. unit:mm Fast switching speed. 2010C Wide ASO. [2SC4106] Adoption of MBIT process. 10.2 4.5 3.6 5.1 1.3 1.2 1 : Base 0.8 0.4 2 : Collector 1 2 3 3 : Emitter JEDEC : TO-220AB

 4.5. 2sc4108.pdf Size:93K _sanyo

2SC4107N
2SC4107N

Ordering number:EN2473A NPN Triple Diffused Planar Silicon Transistor 2SC4108 400V/12A Switching Regulator Applications Features Package Dimensions High breakdown voltage and high reliability. unit:mm Fast switching speed. 2022A Wide ASO. [2SC4108] Adoption of MBIT process. 15.6 3.2 4.8 14.0 2.0 1.6 1.4 2.0 0.6 1.0 1 2 3 1 : Base 0.6 2 : Collector 3 : Emitter

4.6. 2sc4109.pdf Size:95K _sanyo

2SC4107N
2SC4107N

Ordering number:EN2474A NPN Triple Diffused Planar Silicon Transistor 2SC4109 400V/16A Switching Regulator Applications Features Package Dimensions High breakdown voltage and high reliability. unit:mm Fast switching speed. 2022A Wide ASO. [2SC4109] Adoption of MBIT process. 15.6 3.2 4.8 14.0 2.0 1.6 1.4 2.0 0.6 1.0 1 2 3 1 : Base 0.6 2 : Collector 3 : Emitter

4.7. 2sc4102 2sc3906k 2sc2389s.pdf Size:67K _rohm

2SC4107N
2SC4107N

2SC4102 / 2SC3906K / 2SC2389S Transistors High-voltage Amplifier Transistor (120V, 50mA) 2SC4102 / 2SC3906K / 2SC2389S External dimensions (Unit : mm) Features 1) High breakdown voltage. (BVCEO = 120V) 2SC4102 2) Complements the 2SA1579 / 2SA1514K / 2SA1038S. 1.25 Absolute maximum ratings (Ta=25C) 2.1 Parameter Symbol Limits Unit Collector-base voltage VCBO 120 V Colle

4.8. 2sc4102.pdf Size:126K _rohm

2SC4107N
2SC4107N

High-voltage Amplifier Transistor (120V, 50mA) 2SC4102 / 2SC3906K ?Features ?Dimensions (Unit : mm) 1) High breakdown voltage. (BVCEO = 120V) 2SC4102 2) Complements the 2SA1579 / 2SA1514K 1.25 ?Absolute maximum ratings (Ta=25?C) 2.1 Parameter Symbol Limits Unit Collector-base voltage VCBO 120 V Collector-emitter voltage VCEO 120 V 0.1Min. Emitter-base voltage VEBO 5 V Each lead

4.9. 2sc4105.pdf Size:111K _inchange_semiconductor

2SC4107N
2SC4107N

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4105 DESCRIPTION · ·With TO-220C package ·High breakdown voltage ·Fast switching speed ·Wide area of safe operation APPLICATIONS ·For switching regulator applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings(Ta=25?) SYMBO

4.10. 2sc4106.pdf Size:288K _inchange_semiconductor

2SC4107N
2SC4107N

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC4106 DESCRIPTION ·High Collector-Emitter Breakdown Voltage : V(BR)CEO= 400V(Min.) ·High Switching Speed ·Wide Area of Safe Operation APPLICATIONS ·Designed for switching regulator applications ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V

4.11. 2sc4108.pdf Size:211K _inchange_semiconductor

2SC4107N
2SC4107N

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4108 DESCRIPTION ·With TO-3PN package ·High reliability ·High breakdown voltage ·Fast switching speed ·Wide ASO(Safe Operating Area) APPLICATIONS ·400V/12A switching regulator applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (

4.12. 2sc4109.pdf Size:158K _inchange_semiconductor

2SC4107N
2SC4107N

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4109 DESCRIPTION ·With TO-3PN package ·High reliability ·High breakdown voltage ·Fast switching speed ·Wide area of safe operation APPLICATIONS ·400V/16A switching regulator applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO

4.13. 2sc4102.pdf Size:463K _htsemi

2SC4107N

2SC4102 TRANSISTOR (NPN) FEATURES SOT–323 ? High Breakdown Voltage ? Complements the 2SA1579 MAXIMUM RATINGS (Ta=25? unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage 120 V CBO 1. BASE V Collector-Emitter Voltage 120 V 2. EMITTER CEO 3. COLLECTOR V Emitter-Base Voltage 5 V EBO I Collector Current 50 mA C P Collector Power Dissipation 200 m

4.14. 2sc4104.pdf Size:343K _kexin

2SC4107N

SMD Type Transistors NPN Transistors 2SC4104 SOT-23 Unit: mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 ■ Features ● High fT ● Small reverse transfer capacitance 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 ● Complementary to 2SA1580 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 70 Co

4.15. 2sc4102.pdf Size:1100K _kexin

2SC4107N
2SC4107N

SMD Type Transistors NPN Transistors 2SC4102 ■ Features ● High Breakdown Voltage ● Complementary to 2SA1579 1 Base 2 Emitter 3 Collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 120 Collector - Emitter Voltage VCEO 120 V Emitter - Base Voltage VEBO 5 Collector Current - Continuous IC 50 mA Collector Current -

Другие транзисторы... 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2N32 , 2N320 , 2N3200 , 2N3201 , 2N4401 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 2N3208 , 2N3209 , 2N3209AQF .

 

 
Back to Top

 


2SC4107N
  2SC4107N
  2SC4107N
 

social 

Список транзисторов

Обновления

BJT: CHDTC114EKPT | CE1A3Q | 2SC6089 | 2SC4714 | 2SD1047C | 2SB817C | FW26025A1 | 2T665B9 | 2T665A9 | MJ13001A | HSC2682 | MRF660 | MP1620 | HLD133D | BFR360F | AV8050S | 3DD5027 | 3DD2901 | 3DD2102 | 3DD313 |

 

 

 

 

Back to Top