Биполярный транзистор 2SC4108M
- описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SC4108M
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 100
W
Макcимально допустимое напряжение коллектор-база (Ucb): 500
V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 400
V
Макcимально допустимое напряжение эмиттер-база (Ueb): 7
V
Макcимальный постоянный ток коллектора (Ic): 12
A
Предельная температура PN-перехода (Tj): 150
°C
Граничная частота коэффициента передачи тока (ft): 20
MHz
Ёмкость коллекторного перехода (Cc): 160
pf
Статический коэффициент передачи тока (hfe): 20
Корпус транзистора:
TO247
Аналоги (замена) для 2SC4108M
2SC4108M
Datasheet (PDF)
7.1. Size:93K sanyo
2sc4108.pdf 
Ordering number:EN2473ANPN Triple Diffused Planar Silicon Transistor2SC4108400V/12A Switching Regulator ApplicationsFeatures Package Dimensions High breakdown voltage and high reliability.unit:mm Fast switching speed.2022A Wide ASO.[2SC4108] Adoption of MBIT process.15.63.24.814.02.01.61.42.00.61.01 2 31 : Base0.62 : Collector3 : E
7.2. Size:217K inchange semiconductor
2sc4108.pdf 
isc Silicon NPN Power Transistor 2SC4108DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOHigh Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator and general purposeapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBO
8.1. Size:19K sanyo
2sa1580 2sc4104.pdf 
Ordering number:EN3172PNP/NPN Epitaxial Planar Silicon Transistors2SA1580/2SC4104High-Definition CRT Display ApplicationsFeatures Package Dimensions High fT.unit:mm Small reverse transfer capacitance.2018A Adoption of FBET process.[2SA1580/2SC4104]C : CollectorB : BaseE : Emitter( ) : 2SA1580SANYO : CPSpecificationsAbsolute Maximum Ratings at Ta = 25
8.2. Size:92K sanyo
2sc4106.pdf 
Ordering number:EN2471ANPN Triple Diffused Planar Silicon Transistor2SC4106400V/7A Switching Regulator ApplicationsFeatures Package Dimensions High breakdown voltage and high reliability.unit:mm Fast switching speed.2010C Wide ASO.[2SC4106] Adoption of MBIT process.10.24.53.65.11.31.21 : Base0.80.42 : Collector1 2 33 : EmitterJEDEC : T
8.3. Size:93K sanyo
2sc4107.pdf 
Ordering number:EN2472ANPN Triple Diffused Planar Silicon Transistor2SC4107400V/10A Switching Regulator ApplicationsFeatures Package Dimensions High breakdown voltage and high reliability.unit:mm Fast switching speed.2010C Wide ASO.[2SC4107] Adoption of MBIT process.10.24.53.65.11.31.21 : Base0.80.42 : Collector1 2 33 : EmitterJEDEC :
8.4. Size:95K sanyo
2sc4109.pdf 
Ordering number:EN2474ANPN Triple Diffused Planar Silicon Transistor2SC4109400V/16A Switching Regulator ApplicationsFeatures Package Dimensions High breakdown voltage and high reliability.unit:mm Fast switching speed.2022A Wide ASO.[2SC4109] Adoption of MBIT process.15.63.24.814.02.01.61.42.00.61.01 2 31 : Base0.62 : Collector3 : E
8.5. Size:92K sanyo
2sc4105.pdf 
Ordering number:EN2470ANPN Triple Diffused Planar Silicon Transistor2SC4105400V/4A Switching Regulator ApplicationsFeatures Package Dimensions High breakdown voltage and high reliability.unit:mm Fast switching speed.2010C Wide ASO.[2SC4105] Adoption of MBIT process.10.24.53.65.11.31.20.8 1 : Base0.42 : Collector1 2 33 : EmitterJEDEC : TO
8.6. Size:1772K rohm
2sc4102 2sc3906k.pdf 
2SC4102 / 2SC3906KDatasheetHigh-voltage Amplifier Transistor (120V, 50mA)lOutlinelParameter Value SOT-323 SOT-346VCEO120VIC50mA 2SC4102 2SC3906K(UMT3) (SMT3) lFeatures lInner circuitl l1)High breakdown voltage. (BVCEO=120V)2)Complements the 2SA1579/2SA1514K.
8.7. Size:1329K rohm
2sc4102fra.pdf 
2SC4102 / 2SC3906K2SC4102FRA / 2SC3906KFRADatasheetNPN 50mA 120V High Voltage Amplifier transistorsAEC-Q101 QualifiedlOutline UMT3 SMT3Parameter ValueCollector CollectorVCEO120VBase BaseIC50mAEmitterEmitter2SC3906K2SC4102FRA 2SC3906KFRA2SC4102SOT-346 (SC-59)SOT-323 (SC-70)lFeatures1) High Breakdown Voltage (VCEO=120V).2) Complementary PNP Types :2
8.8. Size:67K rohm
2sc4102 2sc3906k 2sc2389s.pdf 
2SC4102 / 2SC3906K / 2SC2389S Transistors High-voltage Amplifier Transistor (120V, 50mA) 2SC4102 / 2SC3906K / 2SC2389S External dimensions (Unit : mm) Features 1) High breakdown voltage. (BVCEO = 120V) 2SC41022) Complements the 2SA1579 / 2SA1514K / 2SA1038S. 1.25 Absolute maximum ratings (Ta=25C) 2.1Parameter Symbol Limits UnitCollector-base voltage VCBO 120 VC
8.9. Size:126K rohm
2sc4102.pdf 
High-voltage Amplifier Transistor (120V, 50mA) 2SC4102 / 2SC3906K Features Dimensions (Unit : mm) 1) High breakdown voltage. (BVCEO = 120V) 2SC41022) Complements the 2SA1579 / 2SA1514K 1.25Absolute maximum ratings (Ta=25C) 2.1Parameter Symbol Limits UnitCollector-base voltage VCBO 120 VCollector-emitter voltage VCEO 120 V0.1Min.Emitter-base voltage VEBO 5 V
8.10. Size:463K htsemi
2sc4102.pdf 
2SC4102TRANSISTOR (NPN)FEATURES SOT323 High Breakdown Voltage Complements the 2SA1579 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage 120 V CBO1. BASE V Collector-Emitter Voltage 120 V 2. EMITTER CEO3. COLLECTOR V Emitter-Base Voltage 5 V EBOI Collector Current 50 mA CP Collector Power Dissipat
8.11. Size:343K kexin
2sc4104.pdf 
SMD Type TransistorsNPN Transistors 2SC4104SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.13 Features High fT Small reverse transfer capacitance1 2+0.1+0.050.95 -0.1 0.1 -0.01 Complementary to 2SA1580+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 70 Co
8.12. Size:1100K kexin
2sc4102.pdf 
SMD Type TransistorsNPN Transistors2SC4102 Features High Breakdown Voltage Complementary to 2SA15791 Base2 Emitter3 Collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 120 Collector - Emitter Voltage VCEO 120 V Emitter - Base Voltage VEBO 5 Collector Current - Continuous IC 50mA Collector Current -
8.13. Size:213K inchange semiconductor
2sc4106.pdf 
isc Silicon NPN Power Transistor 2SC4106DESCRIPTIONHigh Collector-Emitter Breakdown Voltage: V = 400V(Min.)(BR)CEOHigh Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator applicationsABSOLUTE MAXIMUM RATINGS(Ta=25)SYMBOL PARAMETER VALUE UNITV
8.14. Size:213K inchange semiconductor
2sc4107.pdf 
isc Silicon NPN Power Transistor 2SC4107DESCRIPTIONHigh Collector-Emitter Breakdown Voltage: V = 400V(Min.)(BR)CEOHigh Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator applicationsABSOLUTE MAXIMUM RATINGS(Ta=25)SYMBOL PARAMETER VALUE UNITV
8.15. Size:226K inchange semiconductor
2sc4109.pdf 
isc Silicon NPN Power Transistor 2SC4109DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOHigh Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator and general purposeapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBO
8.16. Size:213K inchange semiconductor
2sc4105.pdf 
isc Silicon NPN Power Transistor 2SC4105DESCRIPTIONHigh Collector-Emitter Breakdown Voltage: V = 400V(Min.)(BR)CEOHigh Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator applicationsABSOLUTE MAXIMUM RATINGS(Ta=25)SYMBOL PARAMETER VALUE UNITV
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