2SC4118 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC4118 Audio Frequency Low Power Amplifier Applications Unit: mm Driver Stage Amplifier Applications Switching Applications Excellent hFE linearity : hFE (2) = 25 (min) (VCE = 6 V, IC = 400 mA) Complementary to 2SA1588 Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollec

SMD Type TransistorsNPN Transistors2SC4118 Features Excellent hFE linearity:: hFE(2)=25(min) Complementary to 2SA15881 Base2 Emitter3 Collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 35 Collector - Emitter Voltage VCEO 30 V Emitter - Base Voltage VEBO 5 Collector Current - Continuous IC 500mA Ba

2SC4117 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC4117 Audio Frequency General Purpose Amplifier Applications Unit: mm High voltage: VCEO = 120 V Excellent h linearity: h (I = 0.1 mA)/h (I = 2 mA) = 0.95 (typ.) FE FE C FE C High h h = 200~700 FE: FE Low noise: NF = 1dB (typ.), 10dB (max) Complementary to 2SA1587 Small package

2SC4117 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC4117 Audio Frequency General Purpose Amplifier Applications Unit: mm AEC-Q101 Qualified (Note1) High voltage: V = 120 V CEO Excellent h linearity: h (I = 0.1 mA)/h (I = 2 mA) = 0.95 (typ.) FE FE C FE C High h h = 200 to 700 FE: FE Low noise: NF = 1dB (typ.), 10dB (max) Complemen

2SC4116 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC4116 Audio Frequency General Purpose Amplifier Applications Unit: mmHigh voltage and high current: VCEO = 50 V, IC = 150 mA (max) Excellent hFE linearity: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) High hFE: hFE = 70~700 Low noise: NF = 1dB (typ.), 10dB (max) Complementary to 2SA1586

2SC4116 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC4116 Audio Frequency General Purpose Amplifier Applications Unit: mm AEC-Q101 Qualified (Note1) High voltage and high current: VCEO = 50 V, IC = 150 mA (max) Excellent h linearity: h (I = 0.1 mA)/h (I = 2 mA) = 0.95 (typ.) FE FE C FE C High h : h = 70 to 700 FE FE Low noise: NF = 1dB

Ordering number:EN2548BNPN Triple Diffused Planar Silicon Darlington Transistor2SC4119800V/15A Driver ApplicationsApplications Package Dimensions Induction cookers.unit:mm High-voltage , high-power switching.2048A[2SC4119]Features High speed (adoption of MBIT process). High breakdown voltage (VCBO=1500V). On-chip damper diode. High reliability.E :

Ordering number:EN2475BNPN Triple Diffused Planar Silicon Transistor2SC4110400V/25A Switching Regulator ApplicationsFeatures Package Dimensions High breakdown voltage and high reliability.unit:mm Fast switching speed.2022A Wide ASO.[2SC4110] Adoption of MBIT process.15.63.24.814.02.01.61.42.00.61.01 2 31 : Base0.62 : Collector3 : E

Low Frequency Transistor (20V, 3A) 2SC4115S Features Dimensions(Unit:mm) 1) Low VCE(sat). 2SC4115SVCE(sat) = 0.2V(Typ.) IC / IB = 2A / 0.1A 40.2 20.22) Excellent current gain characteristics. 3) Complements the 2SA1585S. Structure 0.45+0.15-0.05Epitaxial planar type NPN silicon transistor 0.45+0.152.5+0.4 0.5 -0.05-0.15 Absolute maximum ratings (Ta

2SC4116-OMCC2SC4116-YMicro Commercial ComponentsTM20736 Marilla Street Chatsworth2SC4116-GRMicro Commercial ComponentsCA 91311Phone: (818) 701-49332SC4116-BLFax: (818) 701-4939Features Lead Free Finish/RoHS Compliant ("P" Suffix designates NPNRoHS Compliant. See ordering information)Plastic-Encapsulate Epoxy meets UL 94 V-0 flammability rating Moisur

2SC4116-OMCC2SC4116-YMicro Commercial ComponentsTM20736 Marilla Street Chatsworth2SC4116-GRMicro Commercial ComponentsCA 91311Phone: (818) 701-49332SC4116-BLFax: (818) 701-4939Features Lead Free Finish/RoHS Compliant ("P" Suffix designates NPNRoHS Compliant. See ordering information)Plastic-Encapsulate Epoxy meets UL 94 V-0 flammability rating Moisur

2SC4116-OMCC2SC4116-YMicro Commercial ComponentsTM20736 Marilla Street Chatsworth2SC4116-GRMicro Commercial ComponentsCA 91311Phone: (818) 701-49332SC4116-BLFax: (818) 701-4939Features Lead Free Finish/RoHS Compliant ("P" Suffix designates NPNRoHS Compliant. See ordering information)Plastic-Encapsulate Epoxy meets UL 94 V-0 flammability rating Moisur

MCC2SC4115S-QMicro Commercial ComponentsTM20736 Marilla Street Chatsworth2SC4115S-RMicro Commercial ComponentsCA 91311Phone: (818) 701-49332SC4115S-SFax: (818) 701-4939Features Epoxy meets UL 94 V-0 flammability ratingNPN Moisture Sensitivity Level 1 Lead Free Finish/RoHS Compliant ("P" Suffix designates Plastic-EncapsulateRoHS Compliant. See orderin

2SC4116-OMCC2SC4116-YMicro Commercial ComponentsTM20736 Marilla Street Chatsworth2SC4116-GRMicro Commercial ComponentsCA 91311Phone: (818) 701-49332SC4116-BLFax: (818) 701-4939Features Lead Free Finish/RoHS Compliant ("P" Suffix designates NPNRoHS Compliant. See ordering information)Plastic-Encapsulate Epoxy meets UL 94 V-0 flammability rating Moisur

Power Transistors2SC4111Silicon NPN triple diffusion planar typeFor horizontal deflection outputUnit: mm 3.3 0.220.0 0.5 5.0 0.33.0FeaturesHigh-speed switchingHigh collector to base voltage VCBOWide area of safe operation (ASO) 1.5Satisfactory linearity of foward current transfer ratio hFE1.52.0 0.3Absolute Maximum Ratings (TC=25C)2.7 0.33.0 0

2SC4115 3A , 40V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-89 FEATURES Small Flat Package 4 General Purpose Application Low VCE(sat).VCE(sat) = 0.2V (Typ.)(IC / IB = 2A / 0.1A) 123B C AE CLASSIFICATION OF hFE(1) ECProduct-Rank 2SC4115-Q 2SC4115-R 2SC411

2SC4116 0.15A , 60V NPN Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-323FEATURES High voltage and high current. A Excellent hFE linearity. L3 High hFE. 3Top View C B Low noise. 11 2 Complementary to 2SA1586 2K EDCLASSIFICATION OF hFE H JF GP

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors 2SC4115 TRANSISTOR (NPN) SOT-89-3L FEATURES 1. BASE Low VCE(sat).VCE(sat) = 0.2V (Typ.)(IC / IB = 2A / 0.1A) 1 Excellent current gain characteristics. 2 2. COLLECTOR Complements to 2SA1585 3 3. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-92S Plastic-Encapsulate TransistorsTO 92S 2SC4115S TRANSISTOR (NPN)1. EMITTERFEATURES 2. COLLECTOR Low VCE(sat).3. BASE Excellent Current Gain Characteristics.123 Complements The 2SA1585S. Equivalent Circuit C4115S=Device code C4115Solid dot = Green molding compound device, -if none, the norma

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate TransistorsSOT-323 2SC4116 TRANSISTOR (NPN)FEATURES High voltage and high current1. BASE Excellent hFE linearity2. EMITTER High hFE3. COLLECTOR Low noise Complementary to 2SA1586MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage 60 V

2SC4115 TRANSISTOR (NPN)SOT-89 FEATURES Low VCE(sat).VCE(sat) = 0.2V (Typ.)(IC / IB = 2A / 0.1A) 1. BASE 1 Excellent current gain characteristics. 2 Complements to 2SA1585 2. COLLECTOR 3 MAXIMUM RATINGS (TA=25 unless otherwise noted) 3. EMITTER Symbol Parameter Value UnitsVCBO 40 VCollector-Base Voltage VCEO 20 VCollector-Emitter Voltage VEBO 6 V

2SC4116 TRANSISTOR (NPN)SOT-323 FEATURES High voltage and high current Excellent hFE linearity High hFE Low noise 1. BASE Complementary to 2SA1586 2. EMITTER MAXIMUM RATINGS (TA=25 unless otherwise noted) 3. COLLECTOR Symbol Parameter Value UnitsVCBO Collector-Base Voltage 60 VVCEO Collector-Emitter Voltage 50 VVEBO Emitter-Base Voltage 5 VIC Coll

2SC4115 SOT-89 Transistor(NPN)1. BASE SOT-892. COLLECTOR 1 4.6B 4.41.61.82 1.41.43. EMITTER 3 2.64.252.43.75Features 0.8MIN0.53Low VCE(sat).VCE(sat) = 0.2V (Typ.)(IC / IB = 2A / 0.1A) 0.400.480.442x)0.13 B0.35 0.37 Excellent current gain characteristics. 1.53.0 Complements to 2SA1585 Dimensions in inches and (millimeter

2SC4116 SOT-323 Transistor(NPN)SOT-3231. BASE 2. EMITTER 3. COLLECTOR Features High voltage and high current Excellent hFE linearity High hFE Low noise Complementary to 2SA1586 Dimensions in inches and (millimeters)MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 60 VVCEO Collector-Emitter Voltage 50

2SC4116General Purpose TransistorCOLLECTOR33NPN SiliconP b Lead(Pb)-Free112BASE2SOT-323(SC-70)FEATURES EMITTER* High voltage and high current * Excellent hFE linearity * High hFE* Low noise * Complementary to 2SA1586 MAXIMUM RATINGS (TA=25 unless otherwise noted) Parameter Symbol Value Units Collector-Base Voltage VCBO 60 VCollector-Emitter Voltage

RoHS 2SC4110B Series RoHS SEMICONDUCTORNell High Power ProductsSilicon NPN triple diffusion planar transistor25A/400V Switching Regulator Applications15.60.44.80.29.62.00.13.20,1TO-3P(B)23FEATURES+0.2+0.20.651.05-0.1-0.1High-speed switchingHigh breakdown voltage and high reliability5.450.1 5.450.11.4Wide SOA (Safe Operation Area)

SMD Type TransistorsNPN Transistors2SC4117 Features High voltage: VCEO = 120 V High hFE: hFE = 200~700 Low noise: NF = 1dB (typ.), 10dB (max) Small package Complementary to 2SA15871 Base2 Emitter3 Collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 120 Collector - Emitter Voltage VCEO 120

SMD Type TransistorsNPN Transistors2SC41151.70 0.1 Features Collector Current Capability IC=3A Collector Emitter Voltage VCEO=20V Complements to 2SA15850.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 40 Collector - Emitter Voltage VCEO 20 V Emitter - Base

SMD Type TransistorsNPN Transistors2SC4116 Features High voltage and high current High hFE: hFE = 70~700 Low noise: NF = 1dB (typ.), 10dB (max) Small package Complementary to 2SA15861 Base2 Emitter3 Collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector - Emitter Voltage VCEO 50

2SC4115S(3DG4115S) NPN /SILICON NPN TRANSISTOR :/Purpose: Low frequency amplifier. : 2SA1585S(3CG1585S) Features: Low V ,excellent current gain characteristicscomplementary pair with CE(sat)2SA1585S(3CG1585S). /Absolute maximum ratings(Ta=25)

2SC4115S(3DG4115S) NPN /SILICON NPN TRANSISTOR :/Purpose: Low frequency amplifier. : 2SA1585S(3CG1585S) Features: Low V ,excellent current gain characteristicscomplementary pair with CE(sat)2SA1585S(3CG1585S). /Absolute maximum ratings(Ta=25)

SUNROC2SC4115S TRANSISTOR (NPN) TO-92S FEATURES 1. EMITTER Power dissipation PD: 0.3 W (Tamb=25) 2. COLLECTOR Collector current I CM: 3 A 3. BASE Collector-base voltage V(BR)CBO: 40 V Operating and storage junction temperature range 123 TJ, Tstg: -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Sy

2SC4110T4TLSilicon NPN Power TransistorDESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOHigh Switching SpeedWide Area of Safe OperationAPPLICATIONSDesigned for switching regulator and general purposeapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 500 VCBOV Collector-Emitter Volta

SPTECH Product SpecificationSPTECH Silicon NPN Power Transistor 2SC4110DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOHigh Switching SpeedWide Area of Safe OperationAPPLICATIONSDesigned for switching regulator and general purposeapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 500 V

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC4110 DESCRIPTION With TO-3 package Fast switching speed Wide area of safe operation High voltage,high reliability APPLICATIONS For switching regulator applications PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector ABSOLUTE

isc Silicon NPN Power Transistor 2SC4116DESCRIPTIONWith SOT-323 packagingHigh collector-base voltageHigh power dissipationLow saturation voltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsABSOLUTE MAXIMUM RATINGS(Ta=25)SYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 60 VCBO

isc Silicon NPN Power Transistor 2SC4111DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 800V(Min)(BR)CEOHigh Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNIT

isc Silicon NPN Power Transistor 2SC4110DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOHigh Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator and general purposeapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBO