2SC413 datasheet, аналоги, основные параметры
Наименование производителя: 2SC413 📄📄
Тип материала: Si
Полярность: NPN
Предельные значения
Максимальная рассеиваемая мощность (Pc): 20 W
Макcимально допустимое напряжение коллектор-база (Ucb): 60 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 1.5 A
Предельная температура PN-перехода (Tj): 175 °C
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 90 MHz
Статический коэффициент передачи тока (hFE): 25
Корпус транзистора: TO8
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Аналоги (замена) для 2SC413
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2SC413 даташит
0.1. Size:106K sanyo
2sc4134.pdf 
Ordering number ENN2510A PNP/NPN Epitaxial Planar Silicon Transistors 2SA1592/2SC4134 High-Voltage Switching Applications Applications Package Dimensions Power supplies, relay drivers, lamp drivers. unit mm 2045B Features [2SA1592/2SC4134] Adoption FBET, MBIT processes. 6.5 2.3 5.0 High breakdown voltage and large current capacity. 0.5 4 Fast switching speed.
0.3. Size:112K sanyo
2sa1593 2sc4135.pdf 
Ordering number ENN2511A PNP/NPN Epitaxial Planar Silicon Transistors 2SA1593/2SC4135 High-Voltage Switching Applications Applications Package Dimensions Power supplies, relay derivers, lamp drivers. unit mm 2045B Features [2SA1593/2SC4135] Adoption of FBET, MBIT processes. 6.5 2.3 5.0 0.5 High breakdown voltage and large current capacity. 4 Fast switching speed.
0.4. Size:156K sanyo
2sc4135.pdf 
Ordering number EN2511A PNP/NPN Epitaxial Planar Silicon Transistors 2SA1593/2SC4135 High-Voltage Switching Applications Applications Package Dimensions Power supplies, relay derivers, lamp drivers. unit mm 2045B Features [2SA1593/2SC4135] Adoption of FBET, MBIT processes. High breakdown voltage and large current capacity. Fast switching speed. Small and slim pack
0.5. Size:34K rohm
2sc4132 2sd1857.pdf 
2SC4132 / 2SD1857 Transistors Power Transistor (120V, 1.5A) 2SC4132 / 2SD1857 External dimensions (Unit mm) Features 1) High breakdown voltage. (BVCEO = 120V) 2) Low collector output capacitance. 2SC4132 4.0 1.0 2.5 0.5 (Typ. 20pF at VCB = 10V) (1) 3) High transition frequency. (fT = 80MHz) (2) 4) Complements the 2SB1236. (3) (1) Base(Gate) (2) Collector(Drain) RO
0.6. Size:63K rohm
2sc4132.pdf 
2SC4132 / 2SD1857 / 2SD2343 Transistors Power Transistor (120V, 1.5A) 2SC4132 / 2SD1857 / 2SD2343 Features External dimensions (Units mm) 1) High breakdown voltage. (BVCEO = 120V) 2) Low collector output capacitance. 2SC4132 4.0 1.0 2.5 0.5 (Typ. 20pF at VCB = 10V) (1) 3) High transition frequency. (fT = 80MHz) (2) 4) Complements the 2SB1236. (3) (1) Base(Gate) (2) Collecto
0.7. Size:153K rohm
2sc4137.pdf 
High frequency amplifier transistor, RF switching (6V, 50mA) 2SC4774 / 2SC4713K Features Dimensions (Unit mm) 1) Very low output-on resistance (Ron). 2SC4774 2) Low capacitance. 2.0 0.9 0.3 0.2 0.7 (3) Absolute maximum ratings (Ta=25 C) Parameter Symbol Limits Unit (2) (1) Collector-base voltage VCBO 12 V 0.65 0.65 0.15 Collector-emitter voltage VCEO 6 V 1.3
0.8. Size:401K onsemi
2sc4134.pdf 
Ordering number EN2510B 2SC4134 Bipolar Transistor http //onsemi.com ( ) 100V, 1A, Low VCE sat , NPN Single TP/TP-FA Applications Power supplies, relay drivers, lamp drivers Features Adoption FBET, MBIT processes High breakdown voltage and large current capacity Fast switching speed Small and slim package permitting 2SC4134-applied sets to be made more compact
0.9. Size:295K onsemi
2sa1593s-e 2sa1593s 2sa1593t-e 2sa1593t 2sc4135s-e 2sc4135s 2sc4135t-e 2sc4135t.pdf 
Ordering number EN2511B 2SA1593/2SC4135 Bipolar Transistor http //onsemi.com (-)100V, (-)2A, Low VCE(sat), (PNP)NPN Single TP/TP-FA Applications Power supplies, relay derivers, lamp drivers Features Adoption of FBET, MBIT processes High breakdown voltage and large current capacity Fast switching speed Small and slim package permitting 2SA1593/2SC4135-applied se
0.10. Size:290K onsemi
2sc4134s-e 2sc4134s 2sc4134t-e 2sc4134t.pdf 
Ordering number EN2510B 2SC4134 Bipolar Transistor http //onsemi.com ( ) 100V, 1A, Low VCE sat , NPN Single TP/TP-FA Applications Power supplies, relay drivers, lamp drivers Features Adoption FBET, MBIT processes High breakdown voltage and large current capacity Fast switching speed Small and slim package permitting 2SC4134-applied sets to be made more compact
0.11. Size:388K onsemi
2sa1593 2sc4135.pdf 
Ordering number EN2511B 2SA1593/2SC4135 Bipolar Transistor http //onsemi.com (-)100V, (-)2A, Low VCE(sat), (PNP)NPN Single TP/TP-FA Applications Power supplies, relay derivers, lamp drivers Features Adoption of FBET, MBIT processes High breakdown voltage and large current capacity Fast switching speed Small and slim package permitting 2SA1593/2SC4135-applied se
0.13. Size:25K sanken-ele
2sc4139.pdf 
2SC4139 Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor) Application Switching Regulator and General Purpose External Dimensions MT-100(TO3P) Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) Symbol 2SC4139 Symbol Conditions 2SC4139 Unit Unit 0.2 4.8 0.4 15.6 0.1 9.6 2.0 VCBO 500 ICBO VCB=500V 100max
0.14. Size:24K sanken-ele
2sc4138.pdf 
2SC4138 Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor) Application Switching Regulator and General Purpose External Dimensions MT-100(TO3P) Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) Symbol 2SC4138 Unit Symbol Conditions 2SC4138 Unit 0.2 4.8 0.4 15.6 ICBO 0.1 VCBO 500 V VCB=500V 100max A 2.0
0.15. Size:25K sanken-ele
2sc4130.pdf 
2SC4130 Silicon NPN Epitaxial Planar Transistor (High Voltage and High Speed Switchihg Transistor) Application Switching Regulator and General Purpose Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) External Dimensions FM20(TO220F) Symbol 2SC4130 Symbol Conditions 2SC4130 Unit Unit 0.2 4.2 0.2 10.1 c0.5 2.8 VCBO 500 ICBO VCB=500V 100max V A VCEO
0.16. Size:25K sanken-ele
2sc4131.pdf 
LOW VCE (sat) 2SC4131 Silicon NPN Epitaxial Planar Transistor Application DC-DC Converter, Emergency Lighting Inverter and General Purpose Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) External Dimensions FM100(TO3PF) Symbol 2SC4131 Unit Symbol Conditions 2SC4131 Unit 0.2 0.2 5.5 15.6 0.2 3.45 VCBO 100 VCB=100V 10max A V ICBO VCEO 50 IEBO VEB
0.17. Size:1282K cn sps
2sc4131t5tl.pdf 
2SC4131T5TL Silicon NPN Power Transistor DESCRIPTION Collector-Emitter Breakdown Voltage- V = 50V(Min) (BR)CEO Low Collector Saturation Voltage- V = 0.5V(Max)@ I = 5A CE(sat) C APPLICATIONS Designed for DC-DC converter, emergency lighting inverter and general purpose applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 1
0.18. Size:170K cn sptech
2sc4131.pdf 
SPTECH Product Specification SPTECH Silicon NPN Power Transistor 2SC4131 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 50V(Min) (BR)CEO Low Collector Saturation Voltage- VCE(sat)= 0.5V(Max)@ IC= 5A APPLICATIONS Designed for DC-DC converter, emergency lighting inverter and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT VC
0.19. Size:253K inchange semiconductor
2sc4134.pdf 
isc Silicon NPN Power Transistor 2SC4134 DESCRIPTION High voltage and large current capacity Fast-speed switching Small and slim package permitting 2SC4134-applied sets to be made more compact 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supplies,relay drivers,lamp drivers ABSOLUTE MAXIMUM RATIN
0.20. Size:213K inchange semiconductor
2sc4139.pdf 
isc Silicon NPN Power Transistor 2SC4139 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 400V(Min) (BR)CEO High Switching Speed High Reliability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER
0.21. Size:213K inchange semiconductor
2sc4138.pdf 
isc Silicon NPN Power Transistor 2SC4138 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 400V(Min) (BR)CEO High Switching Speed High Reliability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER
0.22. Size:206K inchange semiconductor
2sc4130.pdf 
isc Silicon NPN Power Transistor 2SC4130 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 400V(Min) (BR)CEO High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-
0.23. Size:217K inchange semiconductor
2sc4131.pdf 
isc Silicon NPN Power Transistor 2SC4131 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 50V(Min) (BR)CEO Low Collector Saturation Voltage- V = 0.5V(Max)@ I = 5A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for DC-DC converter, emergency lighting inverter and general purpose applications ABSOLUTE
0.24. Size:256K inchange semiconductor
2sc4135.pdf 
isc Silicon NPN Power Transistor 2SC4135 DESCRIPTION High breakdown voltage and large current capacity Fast switching speed Small and slim package 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation Complementary to 2SA1593 APPLICATIONS Power supplies, relay drivers,lamp drivers. ABSOLUTE MAXIMUM RATINGS(T =25 ) a
Другие транзисторы: 2SC4122, 2SC4123, 2SC4124, 2SC4125, 2SC4126, 2SC4127, 2SC4128, 2SC4129, BC548, 2SC4130, 2SC4131, 2SC4132, 2SC4132N, 2SC4132P, 2SC4132Q, 2SC4132R, 2SC4133
