2SC4130 - параметры, поиск аналогов, даташиты транзистора

Биполярный транзистор 2SC4130 Даташит. Аналоги

   Наименование производителя: 2SC4130
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 30 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 500 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 400 V
   Макcимальный постоянный ток коллектора (Ic): 7 A
   Предельная температура PN-перехода (Tj): 175 °C
   Статический коэффициент передачи тока (hfe): 12
   Корпус транзистора: TO218

Аналог (замена) для 2SC4130

- подбор ⓘ биполярного транзистора по параметрам

2SC4130 Datasheet (PDF)

..1. Size:25K sanken-ele
2sc4130.pdf pdf_icon

2SC4130Silicon NPN Epitaxial Planar Transistor (High Voltage and High Speed Switchihg Transistor)Application : Switching Regulator and General Purpose Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) External Dimensions FM20(TO220F)Symbol 2SC4130 Symbol Conditions 2SC4130Unit Unit0.24.20.210.1c0.52.8VCBO 500 ICBO VCB=500V 100maxV AVCEO

..2. Size:206K inchange semiconductor
2sc4130.pdf pdf_icon

isc Silicon NPN Power Transistor 2SC4130DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator and general purposeapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-

8.1. Size:106K sanyo
2sc4134.pdf pdf_icon

Ordering number:ENN2510APNP/NPN Epitaxial Planar Silicon Transistors2SA1592/2SC4134High-Voltage Switching ApplicationsApplications Package Dimensions Power supplies, relay drivers, lamp drivers. unit:mm2045BFeatures [2SA1592/2SC4134] Adoption FBET, MBIT processes.6.52.35.0 High breakdown voltage and large current capacity. 0.54 Fast switching speed.

8.2. Size:89K sanyo
2sa1591 2sc4133.pdf pdf_icon

8.3. Size:112K sanyo
2sa1593 2sc4135.pdf pdf_icon

Ordering number:ENN2511APNP/NPN Epitaxial Planar Silicon Transistors2SA1593/2SC4135High-Voltage Switching ApplicationsApplications Package Dimensions Power supplies, relay derivers, lamp drivers. unit:mm2045BFeatures [2SA1593/2SC4135] Adoption of FBET, MBIT processes.6.52.35.00.5 High breakdown voltage and large current capacity. 4 Fast switching speed.

8.4. Size:156K sanyo
2sc4135.pdf pdf_icon

Ordering number:EN2511APNP/NPN Epitaxial Planar Silicon Transistors2SA1593/2SC4135High-Voltage Switching ApplicationsApplications Package Dimensions Power supplies, relay derivers, lamp drivers. unit:mm2045BFeatures [2SA1593/2SC4135] Adoption of FBET, MBIT processes. High breakdown voltage and large current capacity. Fast switching speed. Small and slim pack

8.5. Size:34K rohm
2sc4132 2sd1857.pdf pdf_icon

2SC4132 / 2SD1857 Transistors Power Transistor (120V, 1.5A) 2SC4132 / 2SD1857 External dimensions (Unit : mm) Features 1) High breakdown voltage. (BVCEO = 120V) 2) Low collector output capacitance. 2SC41324.01.0 2.5 0.5 (Typ. 20pF at VCB = 10V) (1)3) High transition frequency. (fT = 80MHz) (2)4) Complements the 2SB1236. (3)(1) Base(Gate)(2) Collector(Drain)RO

8.6. Size:63K rohm
2sc4132.pdf pdf_icon

2SC4132 / 2SD1857 / 2SD2343TransistorsPower Transistor (120V, 1.5A)2SC4132 / 2SD1857 / 2SD2343 Features External dimensions (Units : mm)1) High breakdown voltage. (BVCEO = 120V)2) Low collector output capacitance.2SC41324.01.0 2.5 0.5 (Typ. 20pF at VCB = 10V)(1)3) High transition frequency. (fT = 80MHz)(2)4) Complements the 2SB1236.(3)(1) Base(Gate)(2) Collecto

8.7. Size:153K rohm
2sc4137.pdf pdf_icon

High frequency amplifier transistor, RF switching (6V, 50mA) 2SC4774 / 2SC4713K Features Dimensions (Unit : mm) 1) Very low output-on resistance (Ron). 2SC47742) Low capacitance. 2.0 0.90.3 0.2 0.7(3)Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Unit (2) (1)Collector-base voltage VCBO 12 V0.65 0.650.15Collector-emitter voltage VCEO 6 V 1.3

8.8. Size:401K onsemi
2sc4134.pdf pdf_icon

Ordering number : EN2510B2SC4134Bipolar Transistorhttp://onsemi.com( )100V, 1A, Low VCE sat , NPN Single TP/TP-FAApplications Power supplies, relay drivers, lamp driversFeatures Adoption FBET, MBIT processes High breakdown voltage and large current capacity Fast switching speed Small and slim package permitting 2SC4134-applied sets to be made more compact

8.9. Size:295K onsemi
2sa1593s-e 2sa1593s 2sa1593t-e 2sa1593t 2sc4135s-e 2sc4135s 2sc4135t-e 2sc4135t.pdf pdf_icon

Ordering number : EN2511B2SA1593/2SC4135Bipolar Transistorhttp://onsemi.com(-)100V, (-)2A, Low VCE(sat), (PNP)NPN Single TP/TP-FAApplications Power supplies, relay derivers, lamp driversFeatures Adoption of FBET, MBIT processes High breakdown voltage and large current capacity Fast switching speed Small and slim package permitting 2SA1593/2SC4135-applied se

8.10. Size:290K onsemi
2sc4134s-e 2sc4134s 2sc4134t-e 2sc4134t.pdf pdf_icon

8.11. Size:388K onsemi
2sa1593 2sc4135.pdf pdf_icon

8.12. Size:190K jmnic
2sc4139.pdf pdf_icon

JMnic Product SpecificationSilicon NPN Power Transistors 2SC4139 DESCRIPTION With TO-3PN package High voltage High speed switching APPLICATIONS For switching regulator and general purpose applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 EmitterAbsolute maximum ratings(Ta=

8.13. Size:25K sanken-ele
2sc4139.pdf pdf_icon

2SC4139Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor) Application : Switching Regulator and General PurposeExternal Dimensions MT-100(TO3P) Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C)Symbol 2SC4139 Symbol Conditions 2SC4139 UnitUnit0.24.80.415.60.19.6 2.0VCBO 500 ICBO VCB=500V 100max

8.14. Size:24K sanken-ele
2sc4138.pdf pdf_icon

2SC4138Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor)Application : Switching Regulator and General PurposeExternal Dimensions MT-100(TO3P) Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C)Symbol 2SC4138 Unit Symbol Conditions 2SC4138 Unit0.24.80.415.6ICBO 0.1VCBO 500 V VCB=500V 100max A 2.0

8.15. Size:25K sanken-ele
2sc4131.pdf pdf_icon

LOW VCE (sat) 2SC4131Silicon NPN Epitaxial Planar TransistorApplication : DC-DC Converter, Emergency Lighting Inverter and General Purpose Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) External Dimensions FM100(TO3PF)Symbol 2SC4131Unit Symbol Conditions 2SC4131 Unit0.20.2 5.515.60.23.45VCBO 100 VCB=100V 10max AV ICBOVCEO 50 IEBO VEB

8.16. Size:1282K cn sps
2sc4131t5tl.pdf pdf_icon

2SC4131T5TLSilicon NPN Power TransistorDESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 50V(Min)(BR)CEOLow Collector Saturation Voltage-: V = 0.5V(Max)@ I = 5ACE(sat) CAPPLICATIONSDesigned for DC-DC converter, emergency lightinginverter and general purpose applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 1

8.17. Size:170K cn sptech
2sc4131.pdf pdf_icon

SPTECH Product SpecificationSPTECH Silicon NPN Power Transistor 2SC4131DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 50V(Min)(BR)CEOLow Collector Saturation Voltage-: VCE(sat)= 0.5V(Max)@ IC= 5AAPPLICATIONSDesigned for DC-DC converter, emergencylighting inverter and general purpose applicationsABSOLUTE MAXIMUM RATINGS(Ta=25)SYMBOL PARAMETER VALUE UNITVC

8.18. Size:253K inchange semiconductor
2sc4134.pdf pdf_icon

isc Silicon NPN Power Transistor 2SC4134DESCRIPTIONHigh voltage and large current capacityFast-speed switchingSmall and slim package permitting 2SC4134-applied sets to be made more compact100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplies,relay drivers,lamp driversABSOLUTE MAXIMUM RATIN

8.19. Size:213K inchange semiconductor
2sc4139.pdf pdf_icon

isc Silicon NPN Power Transistor 2SC4139DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOHigh Switching SpeedHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator and general purposeapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER

8.20. Size:213K inchange semiconductor
2sc4138.pdf pdf_icon

isc Silicon NPN Power Transistor 2SC4138DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOHigh Switching SpeedHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator and general purposeapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER

8.21. Size:217K inchange semiconductor
2sc4131.pdf pdf_icon

isc Silicon NPN Power Transistor 2SC4131DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 50V(Min)(BR)CEOLow Collector Saturation Voltage-: V = 0.5V(Max)@ I = 5ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for DC-DC converter, emergency lightinginverter and general purpose applicationsABSOLUTE

8.22. Size:256K inchange semiconductor
2sc4135.pdf pdf_icon

isc Silicon NPN Power Transistor 2SC4135DESCRIPTIONHigh breakdown voltage and large current capacityFast switching speedSmall and slim package100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationComplementary to 2SA1593APPLICATIONSPower supplies, relay drivers,lamp drivers.ABSOLUTE MAXIMUM RATINGS(T =25)a

Другие транзисторы... 2SC4123 , 2SC4124 , 2SC4125 , 2SC4126 , 2SC4127 , 2SC4128 , 2SC4129 , 2SC413 , A1015 , 2SC4131 , 2SC4132 , 2SC4132N , 2SC4132P , 2SC4132Q , 2SC4132R , 2SC4133 , 2SC4134 .