Биполярный транзистор 2SC4146 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SC4146
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 0.3 W
Макcимально допустимое напряжение коллектор-база (Ucb): 50 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
Макcимальный постоянный ток коллектора (Ic): 0.1 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 250 MHz
Ёмкость коллекторного перехода (Cc): 3.5 pf
Статический коэффициент передачи тока (hfe): 60
Корпус транзистора: TO236
2SC4146 Datasheet (PDF)
2sc4149.pdf
JMnic Product SpecificationSilicon NPN Power Transistors 2SC4149 DESCRIPTION With ITO-220 package Switching power transistor Low saturation voltage PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (ITO-220) and symbol 3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-base voltage Open emitter 60 V
2sc4140.pdf
JMnic Product SpecificationSilicon NPN Power Transistors 2SC4140 DESCRIPTION With TO-3PN package High voltage High speed switching APPLICATIONS For switching regulator and general purpose applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 EmitterAbsolute maximum ratings(Ta=
2sc4148.pdf
Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC4148 DESCRIPTION With ITO-220 package Switching power transistor PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterFig.1 simplified outline (ITO-220) and symbol Absolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-base voltage Open emitter 60 V VCEO Collector-e
2sc4140.pdf
2SC4140Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor)Application : Switching Regulator and General Purpose Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) External Dimensions MT-100(TO3P)Symbol 2SC4140 Symbol Conditions 2SC4140 UnitUnit0.24.80.415.60.19.6 2.0VCBO 500 ICBO VCB=500V 100max
2sc4149.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4149 DESCRIPTION With ITO-220 package Switching power transistor Low saturation voltage PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (ITO-220) and symbol 3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-base voltage
2sc4140.pdf
isc Silicon NPN Power Transistor 2SC4140DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOHigh Switching SpeedHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator and general purposeapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER
2sc4148.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistors 2SC4148DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 40V(Min)CEO(SUS)Collector Current-I = 7A(Max.)CLow Collector Saturation Voltage: V = 0.3V(Max.)@ I = 3.5ACE(sat) C100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned f
Другие транзисторы... 2SC4139 , 2SC414 , 2SC4140 , 2SC4141 , 2SC4142 , 2SC4143 , 2SC4144 , 2SC4145 , S8550 , 2SC4147 , 2SC4148 , 2SC4149 , 2SC415 , 2SC4150 , 2SC4151 , 2SC4152 , 2SC4153 .
