Биполярный транзистор 2SC4162M - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SC4162M
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 35 W
Макcимально допустимое напряжение коллектор-база (Ucb): 500 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 400 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 7 V
Макcимальный постоянный ток коллектора (Ic): 10 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 20 MHz
Ёмкость коллекторного перехода (Cc): 120 pf
Статический коэффициент передачи тока (hfe): 20
Корпус транзистора: TO220F
2SC4162M Datasheet (PDF)
2sc4162.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4162DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOHigh Switching SpeedWide Area of Safe Operation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator and general purposeapplications.
2sc4160.pdf
Ordering number:ENN2481CNPN Triple Diffused Planar Silicon Transistor2SC4160400V/4A Switching Regulator ApplicationsFeatures Package Dimensions High breakdown voltage.unit:mm High reliability.2041A Fast switching speed (tf=0.1 s typ).[2SC4160] Wide ASO.4.510.02.8 Adoption of MBIT process.3.2 Micaless package facilitating mounting.2.41.6
2sa1607 2sc4168.pdf
Ordering number:EN2479APNP/NPN Epitaxial Planar Silicon Transistors2SA1607/2SC4168High-Speed Switching ApplicationsFeatures Package Dimensions Fast switching speed.unit:mm High gain-bandwidth product.2018A Low saturation voltage.[2SA1607/2SC4168]C : CollectorB : BaseE : Emitter( ) : 2SA1607SANYO : CPSpecificationsAbsolute Maximum Ratings at Ta = 25C
2sc4160.pdf
Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC4160 DESCRIPTION With TO-220F package High breakdown voltage. High reliability. Fast switching speed Wide ASO (Safe Operating Area) APPLICATIONS 400V/4A Switching Regulator Applications PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterFig.1 simplified outline (TO-220F) and symbol Ab
2sc4161.pdf
Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC4161 DESCRIPTION With TO-220F package High breakdown voltage. High reliability. Fast switching speed APPLICATIONS Switching Regulator Applications PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterFig.1 simplified outline (TO-220F) and symbol Absolute maximum ratings (Ta=25) SYMBOL
2sc4168.pdf
SMD Type TransistorsNPN Transistors 2SC4168SOT-23Unit: mm+0.12.9 -0.10.4+0.1-0.13 Features Fast switching speed. High gain-bandwidth product.1 2+0.1+0.050.95 -0.1 0.1-0.01 Low saturation voltage.+0.11.9 -0.1 Complementary to 2SA1607.1.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit
2sc4160.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4160DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOHigh Switching SpeedWide Area of Safe Operation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator and general purposeApplications.
2sc4164.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4164DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOHigh Switching SpeedWide Area of Safe Operation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator and general purposeapplications.
2sc4161.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4161DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOHigh Switching SpeedWide Area of Safe Operation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator and general purposeapplications.
2sc4163.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4163DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOHigh Switching SpeedWide Area of Safe Operation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator and general purposeapplications.
Другие транзисторы... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D882P , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
