Биполярный транзистор 2SC4168-3 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SC4168-3
Маркировка: GT3
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 0.5 W
Макcимально допустимое напряжение коллектор-база (Ucb): 40 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 20 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 0.15 A
Предельная температура PN-перехода (Tj): 175 °C
Граничная частота коэффициента передачи тока (ft): 700 MHz
Ёмкость коллекторного перехода (Cc): 2.6 pf
Статический коэффициент передачи тока (hfe): 60
Корпус транзистора: TO236
Аналоги (замена) для 2SC4168-3
2SC4168-3 Datasheet (PDF)
2sa1607 2sc4168.pdf
Ordering number:EN2479APNP/NPN Epitaxial Planar Silicon Transistors2SA1607/2SC4168High-Speed Switching ApplicationsFeatures Package Dimensions Fast switching speed.unit:mm High gain-bandwidth product.2018A Low saturation voltage.[2SA1607/2SC4168]C : CollectorB : BaseE : Emitter( ) : 2SA1607SANYO : CPSpecificationsAbsolute Maximum Ratings at Ta = 25C
2sc4168.pdf
SMD Type TransistorsNPN Transistors 2SC4168SOT-23Unit: mm+0.12.9 -0.10.4+0.1-0.13 Features Fast switching speed. High gain-bandwidth product.1 2+0.1+0.050.95 -0.1 0.1-0.01 Low saturation voltage.+0.11.9 -0.1 Complementary to 2SA1607.1.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit
2sc4160.pdf
Ordering number:ENN2481CNPN Triple Diffused Planar Silicon Transistor2SC4160400V/4A Switching Regulator ApplicationsFeatures Package Dimensions High breakdown voltage.unit:mm High reliability.2041A Fast switching speed (tf=0.1 s typ).[2SC4160] Wide ASO.4.510.02.8 Adoption of MBIT process.3.2 Micaless package facilitating mounting.2.41.6
2sc4160.pdf
Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC4160 DESCRIPTION With TO-220F package High breakdown voltage. High reliability. Fast switching speed Wide ASO (Safe Operating Area) APPLICATIONS 400V/4A Switching Regulator Applications PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterFig.1 simplified outline (TO-220F) and symbol Ab
2sc4161.pdf
Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC4161 DESCRIPTION With TO-220F package High breakdown voltage. High reliability. Fast switching speed APPLICATIONS Switching Regulator Applications PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterFig.1 simplified outline (TO-220F) and symbol Absolute maximum ratings (Ta=25) SYMBOL
2sc4160.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4160DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOHigh Switching SpeedWide Area of Safe Operation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator and general purposeApplications.
2sc4162.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4162DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOHigh Switching SpeedWide Area of Safe Operation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator and general purposeapplications.
2sc4164.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4164DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOHigh Switching SpeedWide Area of Safe Operation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator and general purposeapplications.
2sc4161.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4161DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOHigh Switching SpeedWide Area of Safe Operation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator and general purposeapplications.
2sc4163.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4163DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOHigh Switching SpeedWide Area of Safe Operation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator and general purposeapplications.
Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050