2SC4179
- Даташиты. Аналоги. Основные параметры
Наименование производителя: 2SC4179
Маркировка: FA3_FA4
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 0.1
W
Макcимально допустимое напряжение коллектор-база (Ucb): 50
V
Макcимальный постоянный ток коллектора (Ic): 0.05
A
Предельная температура PN-перехода (Tj): 175
°C
Граничная частота коэффициента передачи тока (ft): 250
MHz
Статический коэффициент передачи тока (hfe): 200
Корпус транзистора:
TO236
Аналоги (замена) для 2SC4179
2SC4179
Datasheet (PDF)
8.2. Size:109K sanyo
2sc4172.pdf 

Ordering number EN2546A NPN Triple Diffused Planar Silicon Transistor 2SC4172 500V/5A Switching Regulator Applications Features Package Dimensions High breakdown voltage (VCBO 800V). unit mm Fast switching speed. 2049C Wide ASO. [2SC4172] Suitable for sets whose height is restricted. 10.2 4.5 1.3 1.2 0.8 0.4 1 2 3 1 Base 2 Collector 3 Emitter 2.55 2
8.8. Size:103K secos
2sc4177.pdf 

2SC4177 0.1A , 60V NPN Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-323 FEATURES High DC Current Gain. A L High Voltage. 3 3 Complementary to 2SA1611 Top View C B 1 1 2 2 K E APPLICATIONS General Purpose Amplification D H J F G CLASSIFICATION OF hFE M
8.9. Size:450K htsemi
2sc4177.pdf 

2SC4177 TRANSISTOR (NPN) FEATURES High DC Current Gain SOT 323 Complementary to 2SA1611 High Voltage APPLICATIONS General Purpose Amplification MAXIMUM RATINGS (Ta=25 unless otherwise noted) 1. BASE Symbol Parameter Value Unit 2. EMITTER V Collector-Base Voltage 60 V CBO 3. COLLECTOR V Collector-Emitter Voltage 50 V CEO V Emitter-Base Voltage
8.10. Size:2818K kexin
2sc4177.pdf 

SMD Type Transistors NPN Transistors 2SC4177 Features High DC Current Gain hFE=200(typ) High Voltage VCEO=50V Complementary to 2SA1611 1 Base 2 Emitter 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector - Emitter Voltage VCEO 50 V Emitter - Base Voltage VEBO 5 Collector Current - Conti
8.11. Size:621K cn shikues
2sc4177l4 2sc4177l5 2sc4177l6 2sc4177l7.pdf 

2SC4177 NPN Plastic-Encapsulate Transistors Encapsulate Transistors FEATURES High DC Current Gain Complementary to 2SA1611 High Voltage APPLICATIONS General Purpose Amplification MAXIMUM RATINGS (Ta=25 unless otherwise noted) unless otherwise noted) ELECTRICAL CHARACTERISTICS (Ta=25 ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified) *Pulse test
8.12. Size:6366K cn twgmc
2sc4177l4 2sc4177l5 2sc4177l6 2sc4177l7.pdf 

2SC4177 2SC4177 2SC4177 2SC4177 TRANSISTOR(NPN) 2SC417 7 FEATURES SOT 323 3 High DC Current Gain Complementary to 2SA1611 High Voltage 1. BASE 1 2. EMITTER APPLICATIONS 2 3. COLLECTOR General Purpose Amplification MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage 60 V CBO V Collector-Emitter Vo
Другие транзисторы... 2SC4172M
, 2SC4172N
, 2SC4173
, 2SC4174
, 2SC4175
, 2SC4176
, 2SC4177
, 2SC4178
, 2N3904
, 2SC4180
, 2SC4181
, 2SC4181A
, 2SC4182
, 2SC4183
, 2SC4185
, 2SC4186
, 2SC4187
.
History: RN2710
| RN2902FS