Биполярный транзистор 2SC4292
- описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SC4292
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 100
W
Макcимально допустимое напряжение коллектор-база (Ucb): 1500
V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 800
V
Макcимальный постоянный ток коллектора (Ic): 6
A
Предельная температура PN-перехода (Tj): 175
°C
Статический коэффициент передачи тока (hfe): 10
Корпус транзистора:
TO218
Аналоги (замена) для 2SC4292
2SC4292
Datasheet (PDF)
8.2. Size:92K sanyo
2sc4293.pdf Ordering number:EN2963NPN Triple Diffused Planar Silicon Transistor2SC4293Ultrahigh-Definition Color DisplayHorizontal Deflection Output ApplicationsFeatures Package Dimensions High speed (tf=300ns max).unit:mm High breakdown voltage (VCBO=1500V).2039D High reliability (adoption of HVP process).[2SC4293] Adoption of MBIT process.16.05.63.4 On-chip
8.3. Size:39K sanyo
2sc4291.pdf Ordering number:EN2679ANPN Triple Diffused Planar Silicon Transistor2SC4291Ultrahigh-Definition Color DisplayHorizontal Deflection Output ApplicationsFeatures Package Dimensions High speed (tf=0.3s max).unit:mm High breakdown voltage (VCBO=1500V).2022A High reliability (adoption of HVP process).[2SC4291] Adoption of MBIT process.15.63.24.814.02.0
8.4. Size:237K jmnic
2sc4297.pdf JMnic Product SpecificationSilicon NPN Power Transistors 2SC4297 DESCRIPTION With TO-3PML package High voltage ,high speed switching APPLICATIONS For switching regulator and general purpose applications PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-3PML) and symbol 3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS
8.5. Size:237K jmnic
2sc4299.pdf JMnic Product SpecificationSilicon NPN Power Transistors 2SC4299 DESCRIPTION With TO-3PML package High voltage ,high switching speed Wide area of safe operation APPLICATIONS For switching regulator and general purpose applications PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-3PML) and symbol 3 EmitterAbsolute maximum ratings(Ta=25
8.6. Size:233K jmnic
2sc4298.pdf JMnic Product SpecificationSilicon NPN Power Transistors 2SC4298 DESCRIPTION With TO-3PML package High voltage ,high speed switching APPLICATIONS For switching regulator and general purpose applications PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-3PML) and symbol 3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS
8.7. Size:25K sanken-ele
2sc4296.pdf 2SC4296Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor)Application : Switching Regulator and General PurposeExternal Dimensions FM100(TO3PF) Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C)Symbol 2SC4296 Symbol Conditions 2SC4296Unit Unit0.20.2 5.515.60.23.45VCBO 500 ICBO VCB=500V 100maxV
8.8. Size:25K sanken-ele
2sc4297.pdf 2SC4297Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor)Application : Switching Regulator and General PurposeExternal Dimensions FM100(TO3PF) Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C)Symbol 2SC4297 Unit Symbol Conditions 2SC4297 Unit0.20.2 5.515.60.23.45VCBO V ICBO VCB=500V 100max A50
8.9. Size:25K sanken-ele
2sc4299.pdf 2SC4299Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor)Application : Switching Regulator and General PurposeExternal Dimensions FM100(TO3PF) Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C)Symbol 2SC4299 Symbol Conditions 2SC4299 UnitUnit0.20.2 5.515.60.23.45VCBO 900 ICBO VCB=800V 100max AVVCEO 800 IE
8.10. Size:26K sanken-ele
2sc4298.pdf 2SC4298Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor)Application : Switching Regulator and General PurposeExternal Dimensions FM100(TO3PF) Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C)2SC4298Symbol 2SC4298 Symbol Conditions UnitUnit0.20.2 5.515.60.23.45100maxVCBO 500 ICBO VCB=500V
8.11. Size:191K inchange semiconductor
2sc4296.pdf INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4296DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOHigh Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator and general purposeapplications.ABSOLUTE MAXIMUM RATINGS(T =25
8.12. Size:188K inchange semiconductor
2sc4293.pdf INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4293DESCRIPTIONHigh Breakdown Voltage-: V = 1500V(Min)(BR)CBOHigh Switching SpeedBuilt-in Damper DiodeGood Linearity of hFEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSUltrahigh-definition color display horizontal deflectionoutput applicationsABSOLU
8.13. Size:190K inchange semiconductor
2sc4297.pdf INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4297DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOHigh Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator and general purposeapplications.ABSOLUTE MAXIMUM RATINGS(T =25
8.14. Size:191K inchange semiconductor
2sc4299.pdf INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4299DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 800V(Min)(BR)CEOHigh Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator and general purposeapplications.ABSOLUTE MAXIMUM RATINGS(T =25
8.15. Size:222K inchange semiconductor
2sc4298.pdf isc Silicon NPN Power Transistor 2SC4298DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOHigh Switching SpeedHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator and general purposeapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER
8.16. Size:188K inchange semiconductor
2sc4294.pdf INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4294DESCRIPTIONHigh Breakdown Voltage-: V = 1500V(Min)(BR)CBOHigh Switching SpeedHigh ReliabilityBuilt-in Damper DiodeGood Linearity of hFEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSUltrahigh-definition color display horizontal deflectionoutput
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