2SC4294 - описание и поиск аналогов

 ..1. Size:188K  inchange semiconductor
 2sc4294.pdf 

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4294 DESCRIPTION High Breakdown Voltage- V = 1500V(Min) (BR)CBO High Switching Speed High Reliability Built-in Damper Diode Good Linearity of h FE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Ultrahigh-definition color display horizontal deflection output

 8.1. Size:195K  1
 2sc4295m.pdf 

 8.2. Size:53K  sanyo
 2sc4292.pdf 

 8.3. Size:92K  sanyo
 2sc4293.pdf 

Ordering number EN2963 NPN Triple Diffused Planar Silicon Transistor 2SC4293 Ultrahigh-Definition Color Display Horizontal Deflection Output Applications Features Package Dimensions High speed (tf=300ns max). unit mm High breakdown voltage (VCBO=1500V). 2039D High reliability (adoption of HVP process). [2SC4293] Adoption of MBIT process. 16.0 5.6 3.4 On-chip

 8.4. Size:39K  sanyo
 2sc4291.pdf 

Ordering number EN2679A NPN Triple Diffused Planar Silicon Transistor 2SC4291 Ultrahigh-Definition Color Display Horizontal Deflection Output Applications Features Package Dimensions High speed (tf=0.3 s max). unit mm High breakdown voltage (VCBO=1500V). 2022A High reliability (adoption of HVP process). [2SC4291] Adoption of MBIT process. 15.6 3.2 4.8 14.0 2.0

 8.5. Size:237K  jmnic
 2sc4297.pdf 

JMnic Product Specification Silicon NPN Power Transistors 2SC4297 DESCRIPTION With TO-3PML package High voltage ,high speed switching APPLICATIONS For switching regulator and general purpose applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-3PML) and symbol 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS

 8.6. Size:237K  jmnic
 2sc4299.pdf 

 8.7. Size:233K  jmnic
 2sc4298.pdf 

JMnic Product Specification Silicon NPN Power Transistors 2SC4298 DESCRIPTION With TO-3PML package High voltage ,high speed switching APPLICATIONS For switching regulator and general purpose applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-3PML) and symbol 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS

 8.8. Size:25K  sanken-ele
 2sc4296.pdf 

2SC4296 Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor) Application Switching Regulator and General Purpose External Dimensions FM100(TO3PF) Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) Symbol 2SC4296 Symbol Conditions 2SC4296 Unit Unit 0.2 0.2 5.5 15.6 0.2 3.45 VCBO 500 ICBO VCB=500V 100max V

 8.9. Size:25K  sanken-ele
 2sc4297.pdf 

2SC4297 Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor) Application Switching Regulator and General Purpose External Dimensions FM100(TO3PF) Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) Symbol 2SC4297 Unit Symbol Conditions 2SC4297 Unit 0.2 0.2 5.5 15.6 0.2 3.45 VCBO V ICBO VCB=500V 100max A 50

 8.10. Size:25K  sanken-ele
 2sc4299.pdf 

2SC4299 Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor) Application Switching Regulator and General Purpose External Dimensions FM100(TO3PF) Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) Symbol 2SC4299 Symbol Conditions 2SC4299 Unit Unit 0.2 0.2 5.5 15.6 0.2 3.45 VCBO 900 ICBO VCB=800V 100max A V VCEO 800 IE

 8.11. Size:26K  sanken-ele
 2sc4298.pdf 

2SC4298 Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor) Application Switching Regulator and General Purpose External Dimensions FM100(TO3PF) Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) 2SC4298 Symbol 2SC4298 Symbol Conditions Unit Unit 0.2 0.2 5.5 15.6 0.2 3.45 100max VCBO 500 ICBO VCB=500V

 8.12. Size:191K  inchange semiconductor
 2sc4296.pdf 

 8.13. Size:188K  inchange semiconductor
 2sc4293.pdf 

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4293 DESCRIPTION High Breakdown Voltage- V = 1500V(Min) (BR)CBO High Switching Speed Built-in Damper Diode Good Linearity of h FE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Ultrahigh-definition color display horizontal deflection output applications ABSOLU

 8.14. Size:190K  inchange semiconductor
 2sc4297.pdf 

 8.15. Size:191K  inchange semiconductor
 2sc4299.pdf 

 8.16. Size:222K  inchange semiconductor
 2sc4298.pdf 

isc Silicon NPN Power Transistor 2SC4298 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 400V(Min) (BR)CEO High Switching Speed High Reliability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER