Справочник транзисторов. 2SC4334

 

Биполярный транзистор 2SC4334 - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: 2SC4334
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 25 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 150 V
   Макcимальный постоянный ток коллектора (Ic): 5 A
   Предельная температура PN-перехода (Tj): 125 °C
   Статический коэффициент передачи тока (hfe): 12
   Корпус транзистора: TO220

 Аналоги (замена) для 2SC4334

 

 

2SC4334 Datasheet (PDF)

 8.1. Size:267K  renesas
2sc4331-zk.pdf

2SC4334
2SC4334

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.2. Size:267K  renesas
2sc4331-z.pdf

2SC4334
2SC4334

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.3. Size:108K  nec
2sc4331 2sc4331-z.pdf

2SC4334
2SC4334

DATA SHEETSILICON POWER TRANSISTORS2SC4331, 2SC4331-ZNPN SILICON EPITAXIAL TRANSISTORFOR HIGH-SPEED SWITCHINGThe 2SC4331 and 2SC4331-Z are mold power transistors PACKAGE DRAWING (UNIT: mm)developed for high-speed switching and features a very lowcollector-to-emitter saturation voltage.This transistor is ideal for use in switching regulators, DC/DCconverters, motor drivers, sol

 8.4. Size:34K  nec
2sc4332 2sc4332-z.pdf

2SC4334
2SC4334

DATA SHEETSILICON POWER TRANSISTORS2SC4332, 2SC4332-ZNPN SILICON EPITAXIAL TRANSISTORFOR HIGH-SPEED SWITCHINGThe 2SC4332 and 2SC4332-Z are mold power transistorsPACKAGE DRAWING (Unit: mm)developed for high-speed switching and features a very lowcollector-to-emitter saturation voltage.This transistor is ideal for use in switching regulators, DC/DCconverters, motor drivers, so

 8.5. Size:273K  nec
2sc4331.pdf

2SC4334
2SC4334

 8.6. Size:117K  savantic
2sc4336.pdf

2SC4334
2SC4334

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC4336 DESCRIPTION With TO-220Fa package Fast switching speed Low collector saturation voltage APPLICATIONS For use in switching power supplies ,DC/DC converters,motor drivers,solenoid drivers,etc PINNING PIN DESCRIPTION1 Base 2 Collector Fig.1 simplified outline (TO-220Fa) and symbol

 8.7. Size:161K  jmnic
2sc4336.pdf

2SC4334
2SC4334

JMnic Product SpecificationSilicon NPN Power Transistors 2SC4336 DESCRIPTION With TO-220Fa package Fast switching speed Low collector saturation voltage APPLICATIONS For use in switching power supplies ,DC/DC converters,motor drivers,solenoid drivers,etc PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-220Fa) and symbol3 EmitterAbsolute

 8.8. Size:179K  tysemi
2sc4332-z.pdf

2SC4334
2SC4334

ICSMD Type TransistorsSMD Type TransistorsSMD Type ICICSMD Type TransistorsSMD Type TransistorsSMDType TransistorsSMDType TransistorsProduct specification2SC4332-ZTO-252Unit: mm+0.15 +0.1Features6.50-0.15 2.30-0.1+0.2 +0.85.30-0.2 0.50-0.7Low collector saturation voltage.Fast switching speed.High DC current gain.0.127+0.1 max0.80-0.1+0.12.3 0.60-0

 8.9. Size:195K  inchange semiconductor
2sc4336.pdf

2SC4334
2SC4334

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4336DESCRIPTION Mold package that does not require an insulating boardor insulation bushingHigh Speed Switching100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSThis transistor is ideal for use in switching power supplies,DC/DC converters,mo

 8.10. Size:219K  inchange semiconductor
2sc4332.pdf

2SC4334
2SC4334

isc Silicon NPN Power Transistor 2SC4332DESCRIPTIONLow collector saturation voltageFast switching speedHigh DC current gain and excellent linearity100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSThis transistor is ideal for use in Switching regulators,DC/DC converters,motor drivers,Solenoid drivers

 8.11. Size:223K  inchange semiconductor
2sc4332-z.pdf

2SC4334
2SC4334

isc Silicon NPN Power Transistor 2SC4332-ZDESCRIPTIONLow collector saturation voltageFast switching speedHigh DC current gain and excellent linearity100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSThis transistor is ideal for use in Switching regulators,DC/DC converters,motor drivers,Solenoid drive

 8.12. Size:223K  inchange semiconductor
2sc4331-z.pdf

2SC4334
2SC4334

isc Silicon NPN Power Transistor 2SC4331-ZDESCRIPTIONAvailable for high-current control in small dimensionLow collector saturation voltageFast switching speedHigh DC current gain and excellent linearity100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSThis transistor is ideal for use in Switching r

 8.13. Size:220K  inchange semiconductor
2sc4331.pdf

2SC4334
2SC4334

isc Silicon NPN Power Transistor 2SC4331DESCRIPTIONAvailable for high-current control in small dimensionLow collector saturation voltageFast switching speedHigh DC current gain and excellent linearity100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSThis transistor is ideal for use in Switching reg

 8.14. Size:191K  inchange semiconductor
2sc4330.pdf

2SC4334
2SC4334

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4330DESCRIPTIONLow Collector Saturation Voltage: V = 0.5V(Max)@ I = 8ACE(sat) CCollector-Emitter Sustaining Voltage-: V = 100V (Min)CEO(SUS)High Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high speed a

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History: U2T251

 

 
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