2SC4346 - Даташиты. Аналоги. Основные параметры

DATA SHEET SILICON POWER TRANSISTOR 2SC4346,4346-Z NPN SILICON TRIPLE DIFFUSED TRANSISTOR FOR HIGH SPEED SWITCHING, HIGH VOLTAGE SWITCHING ORDERING INFORMATION DESCRIPTION The 2SC4346 is a mold power transistor developed for PART NUMBER PACKAGE high-speed switching, high voltage switching, and is ideal 2SC4346 TO-251 (MP-3) for use as a driver in devices such as switching re

DATA SHEET SILICON POWER TRANSISTOR 2SC4342 NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR HIGH-SPEED SWITCHING ORDERING INFORMATION DESCRIPTION The 2SC4342 is a high-speed Darlington power transistor. PART NUMBER PACKAGE This transistor is ideal for high-precision control such as PWM 2SC4342 TO-126 (MP-5) control for pulse motors or blushless of OA and FA equi

Power Transistors 2SC4359 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit mm 15.0 0.3 5.0 0.2 11.0 0.2 (3.2) Features High-speed switching 3.2 0.1 High collector-base voltage (Emitter open) VCBO Wide safe oeration area Satisfactory linearity of forward current transfer ratio hFE 2.0 0.2 2.0 0.1 Absolut

2SC4324 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4324 VHF UHF Band Low Noise Amplifier Applications Unit mm Low noise figure, high gain. NF = 1.8dB, S 2 = 9.5dB (f = 2 GHz) 21e Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 10 V Emitter-base voltage VEBO 1.5 V

2SC4394 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4394 VHF UHF Band Low Noise Amplifier Applications Unit mm Low noise figure, high cain. NF = 1.1dB, S 2 = 11dB (f = 1 GHz) 21e Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 12 V Emitter-base voltage VEBO 3 V C

2SC4315 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4315 VHF UHF Band Low Noise Amplifier Applications Unit mm Low noise figure, high gain. NF = 1.1dB, S 2 = 14dB (f = 1 GHz) 21e Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 12 V Emitter-base voltage VEBO 3 V C

2SC4322 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4322 VHF UHF Band Low Noise Amplifier Applications Unit mm Low noise figure, high gain. NF = 1.8dB, S 2 = 7.5dB (f = 2 GHz) 21e Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 10 V Emitter-base voltage VEBO 1.5 V

2SC4325 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4325 VHF UHF Band Low Noise Amplifier Applications Unit mm Low noise figure, high gain. NF = 1.8dB, S 2 = 7.5dB (f = 2 GHz) 21e Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 10 V Emitter-base voltage VEBO 1.5 V

2SC4393 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4393 VHF UHF Band Low Noise Amplifier Applications Unit mm Low noise figure. NF = 1.5dB, S 2 = 16dB (f = 500 MHz) 21e NF = 1.7dB, S 2 = 10.5dB (f = 1000 MHz) 21e Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 17 V Collector-emitter voltage

2SC4320 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4320 VHF UHF Band Low Noise Amplifier Applications Unit mm Low noise figure, high gain. NF = 1.1dB, S 2 = 15dB (f = 1 GHz) 21e Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 10 V Emitter-base voltage VEBO 1.5 V

2SC4321 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4321 VHF UHF Band Low Noise Amplifier Applications Unit mm Low noise figure, high gain. NF = 1.1dB, S 2 = 13dB (f = 1 GHz) 21e Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 10 V Emitter-base voltage VEBO 1.5 V

2SC4317 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4317 VHF UHF Band Low Noise Amplifier Applications Unit mm Low noise figure, high gain. NF = 1.1dB, S 2 = 13dB (f = 1 GHz) 21e Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 10 V Emitter-base voltage VEBO 1.5 V

Ordering number EN3020 NPN Epitaxial Planar Silicon Transistor 2SC4399 High-Frequency General-Purpose Amplifier Applications Features Package Dimensions High power gain PG=25dB typ (f=100MHz). unit mm Very small-sized package permitting the 2SC4399- 2059B applied sets to be made small and slim. [2SC4399] 0.3 0.15 3 0 0.1 1 2 0.3 0.6 0.65 0.65 0.9 2.0 1 Base 2

Ordering number EN2958A NPN Epitaxial Planar Silicon Transistor 2SC4390 High-hFE, AF Amplifier Applications Features Package Dimensions Adoption of MBIT process. unit mm High DC current gain (hFE=800 to 3200). 2038A Large current capacity (IC=2A). [2SC4390] Low collector-to-emitter saturation voltage 4.5 (VCE(sat) 0.3V). 1.5 1.6 High VEBO (VEBO 15V). 0.

Ordering number EN3008 NPN Epitaxial Planar Silicon Transistor 2SC4364 VHF, UHF/MIX. OSC. Low-Voltage High-Frequency Amplifier Applications Features Package Dimensions Low-voltage operation unit mm fT=3.0GHz typ (VCE=3V) 2018B MAG=11dB typ (VCE=3V, IC=3mA) [2SC4364] NF=3.0dB typ (VCE=3V, IC=3mA) 0.4 0.16 3 0 0.1 1 0.95 2 0.95 1.9 2.9 1 Base 2 Emitter 3 Col

Ordering number EN2930A NPN Epitaxial Planar Silicon Transistor 2SC4306 High-Current Switching Applications Features Package Dimensions Adoption of FBET, MBIT processes. unit mm Low saturation voltage. 2045B Fast switching speed. [2SC4306] Large current capacity. 6.5 2.3 5.0 Small and slim package making it easy to make 0.5 4 2SC4306-used set smaller. 0.85

Ordering number EN3007 NPN Epitaxial Planar Silicon Transistor 2SC4365 VHF, UHF/MIX. OSC. Low-Voltage High-Frequency Amplifier Applications Features Package Dimensions Low-voltage operation unit mm fT=3.0GHz typ (VCE=3V) 2018B MAG=12dB typ (VCE=3V, IC=10mA) [2SC4365] NF=1.5dB typ (VCE=3V, IC=5mA) 0.4 0.16 3 0 0.1 1 0.95 2 0.95 1.9 2.9 1 Base 2 Emitter 3 Co

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

DATA SHEET SILICON POWER TRANSISTORS 2SC4331, 2SC4331-Z NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SC4331 and 2SC4331-Z are mold power transistors PACKAGE DRAWING (UNIT mm) developed for high-speed switching and features a very low collector-to-emitter saturation voltage. This transistor is ideal for use in switching regulators, DC/DC converters, motor drivers, sol

DATA SHEET SILICON POWER TRANSISTORS 2SC4332, 2SC4332-Z NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SC4332 and 2SC4332-Z are mold power transistors PACKAGE DRAWING (Unit mm) developed for high-speed switching and features a very low collector-to-emitter saturation voltage. This transistor is ideal for use in switching regulators, DC/DC converters, motor drivers, so

DATA SHEET DARLINGTON POWER TRANSISTOR 2SC4351 NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR HIGH-SPEED SWITCHING The 2SC4351 is a high-speed Darlington power transistor. This PACKAGE DRAWING (UNIT mm) transistor is ideal for high-precision control such as PWM control for pulse motors or blushless motor of OA and FA equipment. FEATURES Mold package that does not req

Transistor 2SC4391 Silicon NPN epitaxial planer type For low-frequency output amplification Unit mm Complementary to 2SA1674 2.5 0.1 1.05 6.9 0.1 0.05 (1.45) 0.7 4.0 0.8 Features Low collector to emitter saturation voltage VCE(sat). High collector to emitter voltage VCEO. 0.65 max. Allowing supply with the radial taping. +0.1 0.45 0.05 Absolute Maximum Ratings (Ta=25

2SC4367 Silicon NPN Epitaxial Application High Frequency amplifier Outline TO-92MOD 1. Emitter 2. Collector 3. Base 3 2 1 2SC4367 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 30 V Collector to emitter voltage VCEO 20 V Emitter to base voltage VEBO 3V Collector current IC 100 mA Collector peak current iC (peak) 200 mA Collecto

2SC4308 Silicon NPN Epitaxial Planar Application VHF Wide band amplifier Outline TO-92 (2) 1. Base 2. Emitter 3. Collector 3 2 1 2SC4308 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 30 V Collector to emitter voltage VCEO 20 V Emitter to base voltage VEBO 3V Collector current IC 300 mA Collector peak current iC (peak) 500 mA C

2SC4366 Silicon NPN Epitaxial Application Low Frequency amplifier Outline MPAK 3 1 1. Emitter 2. Base 2 3. Collector 2SC4366 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 60 V Collector to emitter voltage VCEO 50 V Emitter to base voltage VEBO 15 V Collector current IC 300 mA Collector power dissipation PC 150 mW Junction temp

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC4336 DESCRIPTION With TO-220Fa package Fast switching speed Low collector saturation voltage APPLICATIONS For use in switching power supplies ,DC/DC converters,motor drivers,solenoid drivers,etc PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220Fa) and symbol

2SC4373 0.8 A , 120 V NPN Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-89 FEATURES Small Flat Package. Large Current Capacity. 4 1 2 3 A CLASSIFICATION OF hFE E C Product-Rank 2SC4373-O 2SC4373-Y B D Range 80 160 120 240 F G Marking CO CY H K J L PACKAGE INFORMATION

2SC4375 1.5 A , 30 V NPN Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-89 FEATURES Small Flat Package. Low Collector-Emitter Saturation Voltage. 4 1 2 3 A CLASSIFICATION OF hFE E C Product-Rank 2SC4375-O 2SC4375-Y B D Range 100 200 160 320 F G Marking GO GY H K J L

ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION http //www.idc-com.co.jp 6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPAN Keep safety in your circuit designs ! Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble

ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION http //www.idc-com.co.jp 6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPAN Keep safety in your circuit designs ! Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SC4373 TRANSISTOR (NPN) 1. BASE FEATURES 2. COLLECTOR Small Flat Package Large Current Capacity 3. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Bas

JMnic Product Specification Silicon NPN Power Transistors 2SC4336 DESCRIPTION With TO-220Fa package Fast switching speed Low collector saturation voltage APPLICATIONS For use in switching power supplies ,DC/DC converters,motor drivers,solenoid drivers,etc PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220Fa) and symbol 3 Emitter Absolute

JMnic Product Specification Silicon NPN Power Transistors 2SC4303 DESCRIPTION With TO-3PML package High voltage switchihg transistor APPLICATIONS Switching Regulator, Lighting Inverter and general purpose PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-3PML) and symbol 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITI

JMnic Product Specification Silicon NPN Power Transistors 2SC4350 DESCRIPTION With TO-220 package High DC current gain DARLINGTON APPLICATIONS For high speed power switching applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PAR

JMnic Product Specification Silicon NPN Power Transistors 2SC4369 DESCRIPTION With TO-220F package Complement to type 2SA1658 Good linearity of hFE APPLICATIONS For general purpose applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220F) and symbol 3 Emitter Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE U

JMnic Product Specification Silicon NPN Power Transistors 2SC4300 DESCRIPTION With TO-3PML package High voltage switchihg transistor APPLICATIONS For switching regulator and general purpose applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-3PML) and symbol 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS

JMnic Product Specification Silicon NPN Power Transistors 2SC4301 DESCRIPTION With TO-3PML package High voltage switchihg transistor APPLICATIONS Switching Regulator, Lighting Inverter and general purpose PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-3PML) and symbol 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITI

JMnic Product Specification Silicon NPN Power Transistors 2SC4304 DESCRIPTION With TO-220F package High voltage High speed switching APPLICATIONS For switching regulator and general purpose applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220F) and symbol 3 Emitter Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITI

2SC4381/4382 Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1667/1668) Application TV Vertical Output, Audio Output Driver and General Purpose Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) External Dimensions FM20(TO220F) Symbol 2SC4381 2SC4382 Unit Symbol Conditions 2SC4381 2SC4382 Unit 0.2 4.2 0.2 10.1 c0.5 2.8 VCBO 150 200

2SC4300 Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor) Application Switching Regulator and General Purpose External Dimensions FM100(TO3PF) Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) Symbol 2SC4300 Symbol Conditions 2SC4300 Unit Unit 0.2 0.2 5.5 15.6 0.2 3.45 VCBO 900 ICBO VCB=800V 100max A V VCEO 800 IE

2SC4301 Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor) Application Switching Regulator, Lighting Inverter and General Purpose External Dimensions FM100(TO3PF) Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) Symbol 2SC4301 Unit Symbol Conditions 2SC4301 Unit 0.2 0.2 5.5 15.6 0.2 3.45 VCBO 900 V VCB=800V 100max A

2SC4388 Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1673) Application Audio and General Purpose (Ta=25 C) External Dimensions FM100(TO3PF) Absolute maximum ratings (Ta=25 C) Electrical Characteristics Symbol Conditions 2SC4388 Symbol 2SC4388 Unit Unit 0.2 0.2 5.5 15.6 0.2 3.45 ICBO VCB=200V 10max VCBO 200 V A IEBO VEB=6V 10max A VCEO 180

2SC4304 Silicon NPN Triple Diffused Planar Transistor (High Voltage High Speed Switchihg Transistor) Application Switching Regulator and General Purpose External Dimensions FM20(TO220F) Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) Symbol 2SC4304 Symbol Conditions 2SC4304 Unit Unit 0.2 4.2 0.2 10.1 c0.5 2.8 VCBO 900 ICBO VCB=800V 100max A V V

2SC4374 SOT-89-3L TRANSISTOR (NPN) 1. BASE FEATURES 2. COLLECTOR Small Flat Package Low Collector- Emitter Saturation Voltage 3. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current 400 mA PC Collector Power Dissip

2SC4375 SOT-89-3L TRANSISTOR (NPN) 1. BASE FEATURES 2. COLLECTOR Small Flat Package Low Collector- Emitter Saturation Voltage 3. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 5 V IC Collector Current 1.5 A PC Collector Power Dissip

ST 2SC4379U NPN Silicon Epitaxial Planar Transistor for power amplification applications Absolute Maximum Ratings (Ta = 25 ) Parameter Symbol Value Unit Collector Base Voltage VCBO 50 V Collector Emitter Voltage VCEO 50 V Emitter Base Voltage VEBO 5 V Collector Current IC 2 A Base Current IB 0.4 A 0.5 Ptot W Total Power Dissipation 1 1) Junction Temperature Tj 150

ST 2SC4378U NPN Silicon Epitaxial Planar Transistor Absolute Maximum Ratings (Ta = 25 ) Parameter Symbol Value Unit Collector Base Voltage VCBO 80 V Collector Emitter Voltage VCEO 60 V Emitter Base Voltage VEBO 5 V Collector Current IC 1 A Peak Collector Current ICP 2 A 0.5 Ptot W Total Power Dissipation 1 1) Junction Temperature Tj 150 Storage Temperature Range Tstg

ST 2SC4375U NPN Silicon Epitaxial Planar Transistor High current application Absolute Maximum Ratings (Ta = 25 ) Parameter Symbol Value Unit Collector Base Voltage VCBO 30 V Collector Emitter Voltage VCEO 30 V Emitter Base Voltage VEBO 5 V Collector Current IC 1.5 A 0.5 Ptot W Total Power Dissipation 11) Junction Temperature TJ 150 Storage Temperature Range TStg -

2SC4379U NPN Silicon Epitaxial Planar Transistor for power amplification applications Absolute Maximum Ratings (Ta = 25 ) Parameter Symbol Value Unit Collector Base Voltage VCBO 50 V Collector Emitter Voltage VCEO 50 V Emitter Base Voltage VEBO 5 V Collector Current IC 2 A Base Current IB 0.4 A 0.5 Ptot W Total Power Dissipation 1 1) Junction Temperature Tj 150 Sto

IC SMD Type Transistors SMD Type Transistors SMD Type ICIC SMD Type Transistors SMD Type Transistors SMDType Transistors SMDType Transistors Product specification 2SC4332-Z TO-252 Unit mm +0.15 +0.1 Features 6.50-0.15 2.30-0.1 +0.2 +0.8 5.30-0.2 0.50-0.7 Low collector saturation voltage. Fast switching speed. High DC current gain. 0.127 +0.1 max 0.80-0.1 +0.1 2.3 0.60-0

SMD Type Transistors NPN Transistors 2SC4357 SOT-89 Unit mm 1.70 0.1 Features Collector Current Capability IC=2A Collector Emitter Voltage VCEO=60V 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector - Emitter Voltage VCEO 60 V Emitter - Base Voltage VEBO

SMD Type Transistors NPN Transistors 2SC4390 SOT-89 Unit mm 1.70 0.1 Features Collector Current Capability IC=2A Collector Emitter Voltage VCEO=10V 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Collector - Emitter Voltage VCEO 10 V Emitter - Base Voltage VEBO

SMD Type Transistors NPN Transistors 2SC4322 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 Features Collector Current Capability IC=15mA 1 2 Collector Emitter Voltage VCEO=10V +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Colle

SMD Type Transistors NPN Transistors 2SC4325 Features Collector Current Capability IC=15mA Collector Emitter Voltage VCEO=10V 1.Base 2.Emitter 3.Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Collector - Emitter Voltage VCEO 10 V Emitter - Base Voltage VEBO 1.5 Collector Current - Continuous IC 15

SMD Type Transistors NPN Transistors 2SC4364 SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=30mA 1 2 Collector Emitter Voltage VCEO=15V +0.1 +0.05 0.95 -0.1 0.1 -0.01 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 25 Collec

SMD Type Transistors NPN Transistors 2SC4373 1.70 0.1 Features Collector Current Capability IC=800mA Collector Emitter Voltage VCEO=120V 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 120 Collector - Emitter Voltage VCEO 120 V Emitter - Base Voltage VEBO 5 Collec

SMD Type Transistors NPN Transistors 2SC4321 Features Collector Current Capability IC=40mA Collector Emitter Voltage VCEO=10V 1.Base 2.Emitter 3.Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Collector - Emitter Voltage VCEO 10 V Emitter - Base Voltage VEBO 1.5 Collector Current - Continuous IC 40

SMD Type Transistors NPN Transistors 2SC4317 SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=40mA 1 2 Collector Emitter Voltage VCEO=10V +0.05 0.95+0.1 -0.1 0.1 -0.01 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Collect

SMD Type Transistors NPN Transistors 2SC4365 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=50mA 1 2 Collector Emitter Voltage VCEO=15V +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 25 Collect

SMD Type Transistors NPN Transistors 2SC4375 1.70 0.1 Features Collector Current Capability IC=1.5 A Collector Emitter Voltage VCEO=30 V 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Collector - Emitter Voltage VCEO 30 V Emitter - Base Voltage VEBO 5 Collecto

SMD Type Transistors NPN Transistors 2SC4366 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 Features Collector Current Capability IC=300mA 1 2 Collector Emitter Voltage VCEO=50V +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Coll

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4336 DESCRIPTION Mold package that does not require an insulating board or insulation bushing High Speed Switching 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS This transistor is ideal for use in switching power supplies, DC/DC converters,mo

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4383 DESCRIPTION Mold package that does not require an insulating board or insulation bushing High Speed Switching 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS This transistor is ideal for use in 50KHz class switching regulators. ABSOLUTE M

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4381 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 150V(Min) (BR)CEO DC Current Gain- h = 60(Min)@ (V = 10V, I = 0.7A) FE CE C Complement to Type 2SA1667 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for TV vertical outp

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4303 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 800V(Min) (BR)CEO High Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMB

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SC4350 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 100V(Min) CEO(SUS) High DC Current Gain h = 2000 20000(Min) @I = 5A FE C Fast Switching Speed Good Linearity of h FE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high-precis

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4370 DESCRIPTION High Collector-Emitter Breakdown Voltage V = 160V(Min) CEO Complement to Type 2SA1659 Full-mold package that does not require an insulating board or bushing when mounting. 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Design

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4327 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 35V(Min) (BR)CEO Low Collector Saturation Voltage- V = 0.5V(Max)@ (I = 5A, I = 0.3A) CE(sat) C B Complement to Type 2SA1643 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4369 DESCRIPTION Collector-Emitter Breakdown Voltage V = 30V(Min) CEO Good Linearity of h FE Complement to Type 2SA1658 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =2

INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC4308 DESCRIPTION Low Noise High Gain Bandwidth Product 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in VHF wide band amplifiers. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 30 V CBO

isc Silicon NPN Power Transistor 2SC4370AP DESCRIPTION TO-220 package High Collector-Emitter Breakdown Voltage V = 180V(Min) CEO Complement to Type 2SA1659AP Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Bas

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4300 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 800V(Min) (BR)CEO High Switching Speed 100% tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SY

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4388 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 180V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SA1673 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and general purpose applications ABSOLUTE MAXIM

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4385 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 80V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SA1670 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and general purpose applications ABSOLUTE MAXIMU

isc Silicon NPN Power Transistor 2SC4332 DESCRIPTION Low collector saturation voltage Fast switching speed High DC current gain and excellent linearity 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS This transistor is ideal for use in Switching regulators, DC/DC converters,motor drivers,Solenoid drivers

isc Silicon NPN Power Transistor 2SC4332-Z DESCRIPTION Low collector saturation voltage Fast switching speed High DC current gain and excellent linearity 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS This transistor is ideal for use in Switching regulators, DC/DC converters,motor drivers,Solenoid drive

isc Silicon NPN Power Transistor 2SC4331-Z DESCRIPTION Available for high-current control in small dimension Low collector saturation voltage Fast switching speed High DC current gain and excellent linearity 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS This transistor is ideal for use in Switching r

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4368 DESCRIPTION Collector-Emitter Breakdown Voltage V = 150V(Min) CEO Complement to Type 2SA1657 Good Linearity of h FE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for TV, monitor vertical output applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYM

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4387 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 140V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SA1672 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and general purpose applications ABSOLUTE MAXIM

isc Silicon NPN Power Transistor 2SC4331 DESCRIPTION Available for high-current control in small dimension Low collector saturation voltage Fast switching speed High DC current gain and excellent linearity 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS This transistor is ideal for use in Switching reg

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4330 DESCRIPTION Low Collector Saturation Voltage V = 0.5V(Max)@ I = 8A CE(sat) C Collector-Emitter Sustaining Voltage- V = 100V (Min) CEO(SUS) High Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high speed a

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4386 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 120V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SA1671 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and general purpose applications ABSOLUTE MAXIM

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4371 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 400(Min) (BR)CEO Excellent Switching Times- tr= 1.0 s(Max), tf= 1.0 s(Max)@ I = 4A C 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulator application High vol

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4382 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 200V(Min) (BR)CEO DC Current Gain- h = 60(Min)@ (V = 10V, I = 0.7A) FE CE C Complement to Type 2SA1668 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for TV vertical outp

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4313 DESCRIPTION Collector-Emitter Sustaining Voltage- VCEO(SUS)= 800V(Min) Fast Switching speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Color TV horizontal output applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base