2SC4370 - описание и поиск аналогов

 ..1. Size:177K  inchange semiconductor
 2sc4370.pdf 

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4370 DESCRIPTION High Collector-Emitter Breakdown Voltage V = 160V(Min) CEO Complement to Type 2SA1659 Full-mold package that does not require an insulating board or bushing when mounting. 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Design

 0.1. Size:215K  inchange semiconductor
 2sc4370ap.pdf 

isc Silicon NPN Power Transistor 2SC4370AP DESCRIPTION TO-220 package High Collector-Emitter Breakdown Voltage V = 180V(Min) CEO Complement to Type 2SA1659AP Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Bas

 8.1. Size:196K  1
 2sc4379.pdf 

 8.2. Size:72K  secos
 2sc4373.pdf 

2SC4373 0.8 A , 120 V NPN Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-89 FEATURES Small Flat Package. Large Current Capacity. 4 1 2 3 A CLASSIFICATION OF hFE E C Product-Rank 2SC4373-O 2SC4373-Y B D Range 80 160 120 240 F G Marking CO CY H K J L PACKAGE INFORMATION

 8.3. Size:82K  secos
 2sc4375.pdf 

2SC4375 1.5 A , 30 V NPN Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-89 FEATURES Small Flat Package. Low Collector-Emitter Saturation Voltage. 4 1 2 3 A CLASSIFICATION OF hFE E C Product-Rank 2SC4375-O 2SC4375-Y B D Range 100 200 160 320 F G Marking GO GY H K J L

 8.4. Size:587K  jiangsu
 2sc4373.pdf 

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SC4373 TRANSISTOR (NPN) 1. BASE FEATURES 2. COLLECTOR Small Flat Package Large Current Capacity 3. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Bas

 8.5. Size:334K  htsemi
 2sc4374.pdf 

2SC4374 SOT-89-3L TRANSISTOR (NPN) 1. BASE FEATURES 2. COLLECTOR Small Flat Package Low Collector- Emitter Saturation Voltage 3. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current 400 mA PC Collector Power Dissip

 8.6. Size:364K  htsemi
 2sc4373.pdf 

 8.7. Size:333K  htsemi
 2sc4375.pdf 

2SC4375 SOT-89-3L TRANSISTOR (NPN) 1. BASE FEATURES 2. COLLECTOR Small Flat Package Low Collector- Emitter Saturation Voltage 3. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 5 V IC Collector Current 1.5 A PC Collector Power Dissip

 8.8. Size:671K  semtech
 st2sc4379u.pdf 

ST 2SC4379U NPN Silicon Epitaxial Planar Transistor for power amplification applications Absolute Maximum Ratings (Ta = 25 ) Parameter Symbol Value Unit Collector Base Voltage VCBO 50 V Collector Emitter Voltage VCEO 50 V Emitter Base Voltage VEBO 5 V Collector Current IC 2 A Base Current IB 0.4 A 0.5 Ptot W Total Power Dissipation 1 1) Junction Temperature Tj 150

 8.9. Size:634K  semtech
 st2sc4378u.pdf 

ST 2SC4378U NPN Silicon Epitaxial Planar Transistor Absolute Maximum Ratings (Ta = 25 ) Parameter Symbol Value Unit Collector Base Voltage VCBO 80 V Collector Emitter Voltage VCEO 60 V Emitter Base Voltage VEBO 5 V Collector Current IC 1 A Peak Collector Current ICP 2 A 0.5 Ptot W Total Power Dissipation 1 1) Junction Temperature Tj 150 Storage Temperature Range Tstg

 8.10. Size:563K  semtech
 st2sc4375u.pdf 

ST 2SC4375U NPN Silicon Epitaxial Planar Transistor High current application Absolute Maximum Ratings (Ta = 25 ) Parameter Symbol Value Unit Collector Base Voltage VCBO 30 V Collector Emitter Voltage VCEO 30 V Emitter Base Voltage VEBO 5 V Collector Current IC 1.5 A 0.5 Ptot W Total Power Dissipation 11) Junction Temperature TJ 150 Storage Temperature Range TStg -

 8.11. Size:260K  semtech
 2sc4379u-o 2sc4379u-y.pdf 

2SC4379U NPN Silicon Epitaxial Planar Transistor for power amplification applications Absolute Maximum Ratings (Ta = 25 ) Parameter Symbol Value Unit Collector Base Voltage VCBO 50 V Collector Emitter Voltage VCEO 50 V Emitter Base Voltage VEBO 5 V Collector Current IC 2 A Base Current IB 0.4 A 0.5 Ptot W Total Power Dissipation 1 1) Junction Temperature Tj 150 Sto

 8.12. Size:795K  kexin
 2sc4373.pdf 

SMD Type Transistors NPN Transistors 2SC4373 1.70 0.1 Features Collector Current Capability IC=800mA Collector Emitter Voltage VCEO=120V 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 120 Collector - Emitter Voltage VCEO 120 V Emitter - Base Voltage VEBO 5 Collec

 8.13. Size:309K  kexin
 2sc4375.pdf 

SMD Type Transistors NPN Transistors 2SC4375 1.70 0.1 Features Collector Current Capability IC=1.5 A Collector Emitter Voltage VCEO=30 V 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Collector - Emitter Voltage VCEO 30 V Emitter - Base Voltage VEBO 5 Collecto

 8.14. Size:170K  inchange semiconductor
 2sc4371.pdf 

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4371 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 400(Min) (BR)CEO Excellent Switching Times- tr= 1.0 s(Max), tf= 1.0 s(Max)@ I = 4A C 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulator application High vol