Биполярный транзистор 2SC4389 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SC4389
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 1 W
Макcимально допустимое напряжение коллектор-база (Ucb): 30 V
Макcимальный постоянный ток коллектора (Ic): 2 A
Предельная температура PN-перехода (Tj): 125 °C
Статический коэффициент передачи тока (hfe): 50
Корпус транзистора: TO92
2SC4389 Datasheet (PDF)
2sc4381 2sc4382.pdf
2SC4381/4382Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1667/1668)Application : TV Vertical Output, Audio Output Driver and General Purpose Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C)External Dimensions FM20(TO220F)Symbol 2SC4381 2SC4382 Unit Symbol Conditions2SC4381 2SC4382 Unit0.24.20.210.1c0.52.8VCBO 150 200
2sc4388.pdf
2SC4388Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1673)Application : Audio and General Purpose(Ta=25C) External Dimensions FM100(TO3PF) Absolute maximum ratings (Ta=25C) Electrical CharacteristicsSymbol Conditions 2SC4388Symbol 2SC4388 Unit Unit0.20.2 5.515.60.23.45ICBO VCB=200V 10maxVCBO 200 V AIEBO VEB=6V 10max AVCEO 180
2sc4383.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4383DESCRIPTION Mold package that does not require an insulating boardor insulation bushingHigh Speed Switching100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSThis transistor is ideal for use in 50KHz class switchingregulators.ABSOLUTE M
2sc4381.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4381DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 150V(Min)(BR)CEODC Current Gain-: h = 60(Min)@ (V = 10V, I = 0.7A)FE CE CComplement to Type 2SA1667100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for TV vertical outp
2sc4388.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4388DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 180V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SA1673100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio and general purpose applicationsABSOLUTE MAXIM
2sc4385.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4385DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 80V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SA1670100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio and general purpose applicationsABSOLUTE MAXIMU
2sc4387.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4387DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 140V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SA1672100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio and general purpose applicationsABSOLUTE MAXIM
2sc4386.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4386DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 120V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SA1671100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio and general purpose applicationsABSOLUTE MAXIM
2sc4382.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4382DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 200V(Min)(BR)CEODC Current Gain-: h = 60(Min)@ (V = 10V, I = 0.7A)FE CE CComplement to Type 2SA1668100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for TV vertical outp
Другие транзисторы... 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , TIP31C , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .
