2SC4394 - параметры, поиск аналогов, даташиты транзистора

2SC4394 Datasheet (PDF)

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2SC4394 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4394 VHF~UHF Band Low Noise Amplifier Applications Unit: mm Low noise figure, high cain. NF = 1.1dB, |S |2 = 11dB (f = 1 GHz) 21eMaximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 20 VCollector-emitter voltage VCEO 12 VEmitter-base voltage VEBO 3 VC

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2SC4393 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4393 VHF~UHF Band Low Noise Amplifier Applications Unit: mm Low noise figure. NF = 1.5dB, |S |2 = 16dB (f = 500 MHz) 21e NF = 1.7dB, |S |2 = 10.5dB (f = 1000 MHz) 21eMaximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 17 VCollector-emitter voltage

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Ordering number:EN3020NPN Epitaxial Planar Silicon Transistor2SC4399High-FrequencyGeneral-Purpose Amplifier ApplicationsFeatures Package Dimensions High power gain : PG=25dB typ (f=100MHz).unit:mm Very small-sized package permitting the 2SC4399-2059Bapplied sets to be made small and slim.[2SC4399]0.30.1530~0.11 20.3 0.60.65 0.650.92.01 : Base2 :

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Ordering number:EN2958ANPN Epitaxial Planar Silicon Transistor2SC4390High-hFE, AF Amplifier ApplicationsFeatures Package Dimensions Adoption of MBIT process.unit:mm High DC current gain (hFE=800 to 3200).2038A Large current capacity (IC=2A).[2SC4390] Low collector-to-emitter saturation voltage4.5(VCE(sat) 0.3V). 1.51.6 High VEBO (VEBO 15V).0.