2SC44. Аналоги и основные параметры
Наименование производителя: 2SC44
Тип материала: Si
Полярность: NPN
Предельные значения
Максимальная рассеиваемая мощность (Pc): 50 W
Макcимально допустимое напряжение коллектор-база (Ucb): 50 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
Макcимальный постоянный ток коллектора (Ic): 5 A
Предельная температура PN-перехода (Tj): 150 °C
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 10 MHz
Статический коэффициент передачи тока (hFE): 4
Корпус транзистора: TO3
Аналоги (замена) для 2SC44
- подборⓘ биполярного транзистора по параметрам
2SC44 даташит
2sc4409.pdf
2SC4409 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC4409 Power Amplifier Applications Unit mm Power switching applications Low collector saturation voltage VCE (sat) = 0.5V (max) (at I = 1A) C High speed switching time t = 500ns (typ.) stg Small flat package P = 1 2 W (Mounted on ceramic substrate) C Complementary to 2SA1681 Ma
2sc4497.pdf
2SC4497 TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process) 2SC4497 High Voltage Control Applications Unit mm High voltage VCBO = 300 V, VCEO = 300 V Low saturation voltage V = 0.5 V (max) CE (sat) Small collector output capacitance C = 3 pF (typ.) ob Complementary to 2SA1721 Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Ra
2sc4428.pdf
Ordering number EN2851 NPN Triple Diffused Planar Silicon Transistor 2SC4428 800V/6A Switching Regulator Applications Features Package Dimensions High breakdown voltage, high reliability. unit mm Fast switching speed (tf 0.1 s typ). 2039D Wide ASO. [2SC4428] Adoption of MBIT process. 16.0 5.6 3.4 Micaless package facilitating easy mounting. 3.1 2.8 2.0 2
2sc4459.pdf
Ordering number EN3330 NPN Triple Diffused Planar Silicon Transistor 2SC4459 500V/10A Switching Regulator Applications Features Package Dimensions High breakdown voltage, high reliability. unit mm Fast switching speed. 2039D Wide ASO. [2SC4459] Adoption of MBIT process. 16.0 5.6 3.4 Micaless package facilitating mounting. 3.1 2.8 2.0 2.0 1.0 0.6 1 Base
2sa1685 2sc4443.pdf
Ordering number EN3200 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1685/2SC4443 High-Speed Switching Applications Features Package Dimensions Fast switching speed. unit mm High gain-bandwidth product. 2059 Low saturation voltage. [2SA1685/2SC4443] B Base C Collector E Emitter ( ) 2SA1685 SANYO MCP Specifications Absolute Maximum Ratings at Ta = 25 C
2sc4432.pdf
Ordering number ENN3184A 2SC4432 NPN Epitaxial Planar Silicon Transistor 2SC4432 High-Frequency General-Purpose Amplifier Applications Features Package Dimensions High power gain. unit mm High cutoff frequency. 2018B Small Cob, Cre. [2SC4432] Ultrasmall-sized package permitting the 2SC4432- applied sets to be made small and slim. 0.4 0.16 3 0 to 0.1 1 0.9
2sc4453.pdf
Ordering number ENN2812A 2SC4453 NPN Epitaxial Planar Silicon Transistor 2SC4453 High-Speed Switching Applications Features Package Dimensions Fast switching speed. unit mm Low collector saturation voltage. 2018B High gain-bandwidth product. [2SC4453] Small collector capacity. Ultrasmall-sized package permitting the 2SC4453- 0.4 0.16 applied sets to be m
2sc4404.pdf
Ordering number EN2757 NPN Epitaxial Planar Silicon Transistor 2SC4404 UHF Local Oscillator, Wide-Band Amplifier Applications Applications Package Dimensions UHF OSC, wide-band amplifiers. unit mm 2059B Features [2SC4404] 0.3 High cutoff frequency fT=5.0GHz typ 0.15 High power gain MAG=14dB typ (f=0.9GHz) 3 Small noise figure NF=2.2dB typ (f=0.9GHz) 0 0.1
2sc4454.pdf
Ordering number EN2813 NPN Epitaxial Planar Silicon Transistor 2SC4454 High-Speed Switching Applications Features Package Dimensions Fast switching speed. unit mm Low collector saturation voltage. 2033A High gain-bandwidth product. [2SC4454] Small collector capacity. 2.2 4.0 0.4 0.5 0.4 0.4 1 2 3 1.3 1.3 1 Emitter 2 Collector 3 Base 3.0 3.8 SANYO
2sa1710 2sc4490.pdf
Ordering number EN3097 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1710/2SC4490 High-Definition CRT Display Video Output Applications Features Package Dimensions High breakdown voltage (VCEO 300V). unit mm Excellent high frequency characteristic. 2064 Adoption of MBIT process. [2SA1710/2SC4490] E Emitter C Collector B Base ( ) 2SA1710 SANYO NMP Spec
2sc4435.pdf
Ordering number EN3791 NPN Triple Diffused Planar Silicon Transistor 2SC4435 Ultrahigh-Definition Color Display Horizontal Deflection Output Applications Features Package Dimensions Fast switching speed (tf=300ns max). unit mm High brocking voltage (VCBO=1500V). 2022A High reliability (Adoption of HVP process). [2SC4435] Adoption of MBIT process. 15.6 3.2 4.8 14.
2sc4493.pdf
Ordering number EN3099 NPN Triple Diffused Planar Silicon Transistor 2SC4493 High-Voltage Amplifier, High-Voltage Switching Applications Features Package Dimensions High breakdown voltage. unit mm Small Cob. 2049C High reliability (Adoption of HVP process). [2SC4493] Intended for high-density mounting (Suitable for sets 10.2 4.5 1.3 whose height is restricted).
2sc4461.pdf
Ordering number EN3332 NPN Triple Diffused Planar Silicon Transistor 2SC4461 500V/25A Switching Regulator Applications Features Package Dimensions High breakdown voltage, high reliability. unit mm Fast switching speed. 2039D Wide ASO. [2SC4461] Adoption of MBIT process. 16.0 5.6 3.4 Micaless package facilitating mounting. 3.1 2.8 2.0 2.0 1.0 0.6 1 Base
2sa1709 2sc4489.pdf
Ordering number ENN3096 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1709/2SC4489 High-Voltage Switching Applications Features Package Dimensions Adoption of FBET, MBIT processes. unit mm High breakdown voltage, large current capacity. 2064A Fast switching speed. [2SA1709/2SC4489] 2.5 1.45 6.9 1.0 0.6 0.9 0.5 1 2 3 0.45 1 Base 2 Collector ( ) 2SA1709 3
2sc4491.pdf
Ordering number EN3036 NPN Epitaxial Planar Silicon Transistor 2SC4491 L Load (Various Drivers) Switching Applications Applications Package Dimensions Suitable for use in switching of L load (motor unit mm drivers, printer hammer drivers, relay drivers). 2064A [2SC4491] 2.5 1.45 Features 6.9 1.0 Darlington connection. On-chip Zener diode of 60 10V between collector
2sc4485.pdf
Ordering number EN3025 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1705/2SC4485 Low-Frequency Power Amplifier Applications Applications Package Dimensions Voltage regulators, relay drivers, lamp drivers. unit mm 2064 Features [2SA1705/2SC4485] Adoption of FBET process. Fast switching speed. E Emitter C Collector B Base ( ) 2SA1705 SANYO NMP Specification
2sc4489.pdf
Ordering number EN3096 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1709/2SC4489 High-Voltage Switching Applications Features Package Dimensions Adoption of FBET, MBIT processes. unit mm High breakdown voltage, large current capacity. 2064 Fast switching speed. [2SA1709/2SC4489] E Emitter C Collector B Base ( ) 2SA1709 SANYO NMP Specifications Absolute Ma
2sa1708 2sc4488.pdf
Ordering number EN3094A 2SA1708 / 2SC4488 SANYO Semiconductors DATA SHEET PNP / NPN Epitaxial Planar Silicon Transistors 2SA1708 / 2SC4488 High-Voltage Switching Applications Features Adoption of FBET, MBIT processes. High breakdown voltage, large current capacity. Fast switching speed. Specifications ( ) 2SA1708 Absolute Maximum Ratings at Ta=25 C Parameter Symbol
2sc4488.pdf
Ordering number EN3094 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1708/2SC4488 High-Voltage Switching Applications Features Package Dimensions Adoption of FBET, MBIT processes. unit mm High breakdown voltage, large current capacity. 2064 Fast switching speed. [2SA1708/2SC4488] E Emitter C Collector B Base ( ) 2SA1708 SANYO NMP Specifications Absolute
2sc4482.pdf
Ordering number ENN3235 NPN Epitaxial Planar Silicon Transistor 2SC4482 High-Current Switching Applications Features Package Dimensions Low saturation voltage. unit mm Large current capacity. 2064A High-speed switching. [2SC4482] 2.5 1.45 6.9 1.0 0.6 0.9 0.5 1 2 3 0.45 1 Emitter 2 Collector 3 Base 2.54 2.54 SANYO NMP Specifications Absolute Maximum Ra
2sa1697 2sc4474.pdf
Ordering number EN3018 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1697/2SC4474 High-Definition CRT Display, Video Output Applications Applications Package Dimensions High-definition CRT display video output, wide-band unit mm amplifier. 2041 [2SA1697/2SC4474] Features High fT fT=300MHz. High breakdown voltage VCEO=200V min. Small reverse transfer capacitan
2sa1687 2sc4446.pdf
Ordering number EN3013 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1687/2SC4446 Low-Frequency General-Purpose Amplifier Applications Features Package Dimensions Very small-sized package permitting the 2SA1687/ unit mm 2SC4446-applied sets to be made small and slim. 2059 High VEBO. [2SA1687/2SC4446] B Base C Collector E Emitter ( ) 2SA1687 SANYO MCP Specifi
2sc4407.pdf
Ordering number EN2760 NPN Epitaxial Planar Silicon Transistor 2SC4407 VHF/UHF Mixer, Local Oscillator Applications Applications Package Dimensions VHF/UHF mixers, frequency converters, local unit mm oscillators. 2059B [2SC4407] 0.3 Features 0.15 High cutoff frequency fT=3.0GHz typ 3 High power gain PG=12dB typ (f=0.9GHz) 0 0.1 Small noise figure NF=3.0dB
2sc4486.pdf
Ordering number EN3026 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1706/2SC4486 High-Current Switching Applications Applications Package Dimensions Voltage regulators, relay drivers, lamp drivers. unit mm 2064 Features [2SA1706/2SC4486] Adoption of FBET, MBIT processes. Large current capacity and wide ASO. Fast switching speed. E Emitter C Collector B Base
2sc4429.pdf
Ordering number EN2852 NPN Triple Diffused Planar Silicon Transistor 2SC4429 800V/8A Switching Regulator Applications Features Package Dimensions High breakdown voltage, high reliability. unit mm Fast switching speed (tf 0.1 s typ). 2039D Wide ASO. [2SC4429] Adoption of MBIT process. 16.0 5.6 3.4 Micaless package facilitating easy mounting. 3.1 2.8 2.0 2
2sc4460.pdf
Ordering number EN3331 NPN Triple Diffused Planar Silicon Transistor 2SC4460 500V/15A Switching Regulator Applications Features Package Dimensions High breakdown voltage, high reliability. unit mm Fast switching speed. 2039D Wide ASO. [2SC4460] Adoption of MBIT process. 16.0 5.6 3.4 Micaless package facilitating mounting. 3.1 2.8 2.0 2.0 1.0 0.6 1 Base
2sc4400.pdf
Ordering number EN3195 NPN Epitaxial Planar Silicon Transistor 2SC4400 High-Frequency General-Purpose Amplifier Applications Features Package Dimensions High power gain. unit mm High cutoff frequency. 2059B Small Cob, Cre. [2SC4400] Very small-sized package permitting the 2SC4400- 0.3 0.15 applied sets to be made small and slim. 3 0 0.1 1 2 0.3 0.6 0.65 0.65
2sc4406.pdf
Ordering number EN2759A NPN Epitaxial Planar Silicon Transistor 2SC4406 VHF Frequency Mixer, Local Oscillator Applications Applications Package Dimensions VHF mixer, frequency converters, local oscillators. unit mm 2059B Features [2SC4406] 0.3 High cutoff frequency fT=1.2GHz typ 0.15 High power gain PG=15dB typ (f=0.4GHz) 3 Good dependence of fT on current. 0
2sc4433.pdf
Ordering number EN3553 NPN Epitaxial Planar Silicon Transistor 2SC4433 HF Amplifier Applications Features Package Dimensions High power gain PG=28dB typ (f=100MHz). unit mm High cutoff frequency fT=750MHz typ. 2033A Small Cob, Cre. [2SC4433] 2.2 4.0 0.4 0.5 0.4 0.4 1 2 3 1 Emitter 1.3 1.3 2 Collector 3 Base 3.0 3.8 SANYO SPA Specifications Absol
2sc4455.pdf
Ordering number EN2814 NPN Epitaxial Planar Silicon Transistor 2SC4455 High-Speed Switching Applications Features Package Dimensions Fast switching speed. unit mm Low collector saturation voltage. 2061A High gain-bandwidth product. [2SC4455] Small collector capacity. 5.0 4.0 4.0 0.45 0.5 0.44 0.45 1 Emitter 2 Base 3 Collector 1 2 3 SANYO NP JEDEC
2sc4425.pdf
Ordering number EN2848 NPN Triple Diffused Planar Silicon Transistor 2SC4425 400V/25A Switching Regulator Applications Features Package Dimensions High breakdown voltage, high reliability. unit mm Fast switching speed (tf 0.1 s typ). 2039D Wide ASO. [2SC4425] Adoption of MBIT process. 16.0 5.6 3.4 Micaless package facilitating easy mounting. 3.1 2.8 2.0
2sc4413.pdf
Ordering number EN2923 NPN Epitaxial Planar Silicon Transistor 2SC4413 Low-Frequency General-Purpose Amplifier Applications Features Package Dimensions Very small-sized package permitting the 2SC4413- unit mm applied sets to be made small and slim. 2059B Adoption of FBET process. [2SC4413] High DC current gain. 0.3 0.15 Low collector-to-emitter saturation voltage.
2sc4457.pdf
Ordering number EN3328 NPN Triple Diffused Planar Silicon Transistor 2SC4457 500V/4A Switching Regulator Applications Features Package Dimensions High breakdown voltage, high reliability. unit mm Fast switching speed. 2039D Wide ASO. [2SC4457] Adoption of MBIT process. 16.0 5.6 3.4 Micaless package facilitating mounting. 3.1 2.8 2.0 2.0 1.0 0.6 1 Base
2sc4405.pdf
Ordering number EN2758 NPN Epitaxial Planar Silicon Transistor 2SC4405 UHF, Low-Noise, Wide-Band Amplifier Applications Applications Package Dimensions UHF, low-noise amplifiers, wide-band amplifiers. unit mm 2059B Features [2SC4405] 0.3 High cutoff frequency fT=5.0GHz typ 0.15 High power gain MAG=14dB typ (f=0.9GHz) 3 Small noise figure NF=1.5dB typ (f=0.9GH
2sc4426.pdf
Ordering number EN2849 NPN Triple Diffused Planar Silicon Transistor 2SC4426 800V/3A Switching Regulator Applications Features Package Dimensions High breakdown voltage, high reliability. unit mm Fast switching speed (tf 0.1 s typ). 2039D Wide ASO. [2SC4426] Adoption of MBIT process. 16.0 5.6 3.4 Micaless package facilitating easy mounting. 3.1 2.8 2.0 2
2sc4484.pdf
Ordering number EN3024 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1704/2SC4484 High-Current Driver Applications Applications Package Dimensions Voltage regulators, relay drivers. lamp drivers. unit mm 2064 Features [2SA1704/2SC4484] Adoption of FBET, MBIT processes. Low collector-to-emitter voltage. Large current capacity and wide ASO. Fast switching speed.
2sc4424.pdf
Ordering number EN2847 NPN Triple Diffused Planar Silicon Transistor 2SC4424 400V/16A Switching Regulator Applications Features Package Dimensions High breakdown voltage, high reliability. unit mm Fast switching speed (tf 0.1 s typ). 2039D Wide ASO. [2SC4424] Adoption of MBIT process. 16.0 5.6 3.4 Micaless package facilitating easy mounting. 3.1 2.8 2.0
2sc4401.pdf
Ordering number EN2754 NPN Epitaxial Planar Silicon Transistor 2SC4401 VHF/UHF Mixer, Local Oscillator, Low-Voltage Amplifier Applications Applications Package Dimensions VHF/UHF MIX/OSC, low-voltage high-frequency unit mm amplifiers. 2059B [2SC4401] 0.3 Features 0.15 Low-voltage operation 3 fT=3.0GHz typ (VCE=3V) 0 0.1 MAG=11dB typ (VCE=3V, IC=3mA) NF=3.0dB typ
2sc4430.pdf
Ordering number EN2853 NPN Triple Diffused Planar Silicon Transistor 2SC4430 800V/12A Switching Regulator Applications Features Package Dimensions High breakdown voltage, high reliability. unit mm Fast switching speed (tf 0.1 s typ). 2039D Wide ASO. [2SC4430] Adoption of MBIT process. 16.0 5.6 3.4 Micaless package facilitating easy mounting. 3.1 2.8 2.0
2sa1707 2sc4487.pdf
Ordering number ENN3093 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1707/2SC4487 High-Current Switching Applications Features Package Dimensions Adoption of FBET, MBIT processes. unit mm Large current capacity, wide ASO. 2064A Low collector-to-emitter saturation voltage. [2SA1707/2SC4487] Fast switching speed. 2.5 1.45 6.9 1.0 0.6 0.9 0.5 1 2 3 0.45 1 Em
2sc4441.pdf
Ordering number EN3794 NPN Triple Diffused Planar Silicon Transistor 2SC4441 Ultrahigh-Definition Monocuro Display Horizontal Deflection Output Applications Features Package Dimensions High reliability (Adoption of HVP process). unit mm Fast switching speed. 2041A High breakdown voltage. [2SC4441] Wide ASO. 4.5 10.0 2.8 Adoption of MBIT process. 3.2 Mica
2sc4423.pdf
Ordering number EN2854 NPN Triple Diffused Planar Silicon Transistor 2SC4423 400V/12A Switching Regulator Applications Features Package Dimensions High breakdown voltage, high reliability. unit mm Fast switching speed (tf 0.1 s typ). 2039D Wide ASO. [2SC4423] Adoption of MBIT process. 16.0 5.6 3.4 Micaless package facilitating easy mounting. 3.1 2.8 2.0
2sc4440.pdf
Ordering number EN3793 NPN Triple Diffused Planar Silicon Transistor 2SC4440 Ultrahigh-Definition Monochrome Display Horizontal Deflection Output Applications Features Package Dimensions High reliability (Adoption of HVP process). unit mm Fast switching speed. 2041A High brocking voltage. [2SC4440] Wide ASO. 4.5 10.0 2.8 Adoption of MBIT process. 3.2 Mic
2sc4487.pdf
Ordering number EN3093 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1707/2SC4487 High-Current Switching Applications Features Package Dimensions Adoption of FBET, MBIT processes. unit mm Large current capacity, wide ASO. 2064 Low collector-to-emitter saturation voltage. [2SA1707/2SC4487] Fast switching speed. E Emitter C Collector B Base ( ) 2SA1707 SA
2sc4480.pdf
Ordering number EN3234 NPN Epitaxial Planar Silicon Transistor 2SC4480 Low-Frequency General-Purpose Amplifier, General Driver Applications Features Package Dimensions Large current capacity. unit mm Adoption of MBIT process. 2064A High DC current gain. [2SC4480] 2.5 Low collector-to-emitter saturation voltage. 1.45 High VEBO. 6.9 1.0 0.6 0.9 0.5 1 2 3 0.
2sc4450.pdf
Ordering number EN3101 NPN Triple Diffused Planar Silicon Transistor 2SC4450 1500V/5mA High-Voltage Amplifier, High-Voltage Switching Applications Features Package Dimensions High breakdown voltage. unit mm Small Cob. 2010C Wide ASO. [2SC4450] High reliability (Adoption of HVP process). 10.2 4.5 3.6 5.1 1.3 1.2 1 Base 0.8 0.4 2 Collector 1 2 3 3 Emi
2sa1696 2sc4473.pdf
Ordering number EN3017 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1696/2SC4473 High-Definition CRT Display, Video Output Applications Applications Package Dimensions High-definition CRT display video output, wide-band unit mm amplifier. 2041 [2SA1696/2SC4473] Features High fT fT=500MHz. High breakdown voltage VCEO=120V min. Small reverse transfer capacitan
2sc4475.pdf
Ordering number EN3338 NPN Triple Diffused Planar Silicon Transistor 2SC4475 1800V/3mA High-Voltage Amplifier, High-Voltage Switching Applications Applications Package Dimensions High voltage amplifier. unit mm High voltage switching. 2010C Dynamic focus. [2SC4475] 10.2 4.5 3.6 5.1 1.3 Features High breakdown voltage (VCEO min=1800V). Small Cob (Cob typ=1.
2sa1703 2sc4483.pdf
Ordering number EN3023 PNP/NPN Epitaxial Planar Silicon Transistor 2SA1703/2SC4483 Low-Frequency Amplifier, Electronic Governor Applications Features Package Dimensions Low collector-to-emitter saturation voltage. unit mm 2064 [2SA1703/2SC4483] E Emitter C Collector B Base ( ) 2SA1703 SANYO NMP Specifications Absolute Maximum Ratings at Ta = 25 C Parameter Symbol
2sc4412.pdf
Ordering number ENN3019B 2SC4412 NPN Triple Diffused Planar Silicon Transistor 2SC4412 TV Camera Deflection High-Voltage Driver Applications Features Package Dimensions High breakdown voltage(VCEO 300V). unit mm Small reverse transfer capacitance and excellent high 2018B frequency characteristic(Cre 1.0pF typ). [2SC4412] Excellent DC current gain ratio(hFE rati
2sa1701 2sc4481.pdf
Ordering number EN3022 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1701/2SC4481 Low-Frequency General-Purpose Amplifier Applications Applications Package Dimensions AF power amplifier, medium-speed switching, small- unit mm sized motor driver applications. 2064 [2SA1701/2SC4481] Features Large current capacity. Low collector-to-emitter saturation voltage. E Emitt
2sc4476.pdf
Ordering number EN3339 NPN Triple Diffused Planar Silicon Transistor 2SC4476 1800V/10mA High-Voltage Amplifier, High-Voltage Switching Applications Applications Package Dimensions High voltage amplifier. unit mm High voltage switching. 2010C Dynamic focus. [2SC4476] 10.2 4.5 3.6 5.1 1.3 Features High breakdown voltage (VCEO min=1800V). Small Cob (Cob typ=1
2sc4458.pdf
Ordering number ENN3329A 2SC4458 NPN Triple Diffused Planar Silicon Transistors 2SC4458 Switching Regulator Applications Features High breakdown voltage, high reliability. High-speed switching. Wide ASO. Adoption of MBIT process. Attachment workability is good by Mica-less package. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions
2sc4427.pdf
Ordering number EN2850 NPN Triple Diffused Planar Silicon Transistor 2SC4427 800V/4.5A Switching Regulator Applications Features Package Dimensions High breakdown voltage, high reliability. unit mm Fast switching speed (tf 0.1 s typ). 2039D Wide ASO. [2SC4427] Adoption of MBIT process. 16.0 5.6 3.4 Micaless package facilitating easy mounting. 3.1 2.8 2.0
2sc4437.pdf
Ordering number EN3792 NPN Triple Diffused Planar Silicon Transistor 2SC4437 Ultrahigh-Definition Color Display Horizontal Deflection Output Applications Features Package Dimensions High speed (tf=0.3ns max). unit mm High breakdown voltage (VCBO=1500V). 2039D High reliability (adoption of HVP process). [2SC4437] Adoption of MBIT process. 16.0 5.6 3.4 3.1 2.8 2.
2sc4452.pdf
Ordering number EN2811 NPN Epitaxial Planar Silicon Transistor 2SC4452 High-Speed Switching Applications Features Package Dimensions Fast switching speed. unit mm Low collector saturation voltage. 2059B High gain-bandwidth product. [2SC4452] Small collector capacity. 0.3 0.15 Very small-sized package permitting the 2SC4452- 3 applied sets to be made small and
2sa1683 2sc4414.pdf
Ordering number EN3012 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1683/2SC4414 Low-Frequency General-Purpose Amplifier, Low-Frequency Power Amplifier Applications Features Package Dimensions Adoption of FBET process. unit mm High breakdown voltage VCEO>80V. 2033 [2SA1683/2SC4414] B Base C Collector E Emitter ( ) 2SA1683 SANYO SPA Specifications Absolute
2sc4451.pdf
Ordering number EN3102 NPN Triple Diffused Planar Silicon Transistor 2SC4451 1500V/15mA High-Voltage Amplifier, High-Voltage Switching Applications Features Package Dimensions High breakdown voltage. unit mm Small Cob. 2010C Wide ASO. [2SC4451] High reliability (Adoption of HVP process). 10.2 4.5 3.6 5.1 1.3 1.2 1 Base 0.8 0.4 2 Collector 1 2 3 3 Em
2sc4402.pdf
Ordering number EN2755 NPN Epitaxial Planar Silicon Transistor 2SC4402 VHF/UHF Mixer, Local Oscillator, Low-Voltage Amplifier Applications Applications Package Dimensions VHF/UHF MIX/OSC, low-voltage high-frequency unit mm amplifiers. 2059B [2SC4402] 0.3 Features 0.15 Low-voltage operation 3 fT=3.0GHz typ (VCE=3V) 0 0.1 MAG=12dB typ (VCE=3V, IC=10mA) NF=1.5dB ty
2sc4403.pdf
Ordering number EN2756 NPN Epitaxial Planar Silicon Transistor 2SC4403 VHF/UHF Local Oscillator Applications Applications Package Dimensions VHF/UHF oscillators. unit mm 2059B Features [2SC4403] 0.3 High cutoff frequency fT=3.0GHz typ 0.15 High power gain MAG=12dB typ (f=0.9GHz) 3 Small noise figure NF=2.5dB typ (f=0.9GHz) 0 0.1 Very small-sized package
2sc4449.pdf
Ordering number EN3241 NPN Triple Diffused Planar Silicon Transistor 2SC4449 TV Camera Deflection, High-Voltage Driver Applications Features Package Dimensions High breakdown voltage. unit mm Small reverse transfer capacitance and excellent high 2003B frequency characteristic. [2SC4449] Excellent DC current gain. 5.0 4.0 4.0 Adoption of FBET process. 0.45 0.5
2sa1708s-an 2sa1708t-an 2sc4488s-an 2sc4488t-an.pdf
Ordering number EN3094B 2SA1708/2SC4488 Bipolar Transistor http //onsemi.com ( ) ( ) ( ) ( ) - 100V, - 1A, Low VCE sat , PNP NPN Single NMP Features Adoption of FBET, MBIT processes High breakdown voltage, large current capacity Fast switching speed ( )2SA1708 Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Collector-to-Ba
2sc4482t-an 2sc4482u-an.pdf
Ordering number EN3235A 2SC4482 Bipolar Transistor http //onsemi.com ( ) 20V, 5A, Low VCE sat , NPN Single NMP Features Low saturation voltage Large current capacity High-speed switching Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 60 V Collector-to-Emitter Voltage VCEO 20 V Emitter-to-Ba
2sa1707s-an 2sa1707t-an 2sc4487s-an 2sc4487t-an.pdf
Ordering number EN3093A 2SA1707/2SC4487 Bipolar Transistor http //onsemi.com (-)50V, (-)3A, Low VCE(sat), (PNP)NPN Single NMP Features Adoption of FBET, MBIT processes Large current capacity, wide ASO Low collector-to-emitter saturation voltage Fast switching speed ( )2SA1707 Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings
2sa1709s-an 2sa1709t-an 2sc4489s-an 2sc4489t-an.pdf
Ordering number EN3096A 2SA1709/2SC4489 Bipolar Transistor http //onsemi.com (-)100V, (-)2A, Low VCE(sat), (PNP)NPN Single NMP Features Adoption of FBET, MBIT processes High breakdown voltage, large current capacity Fast switching speed ( )2SA1709 Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VC
2sc4410.pdf
Transistor 2SC4410 Silicon NPN epitaxial planer type For UHF amplification Unit mm 2.1 0.1 Features 0.425 1.25 0.1 0.425 Allowing the small current and low voltage operation. High transition frequency fT. 1 S-Mini type package, allowing downsizing of the equipment and 3 automatic insertion through the tape packing and the magazine packing. 2 Absolute Maximum Ratings (Ta=25 C
2sc4417.pdf
Transistor 2SC4417 Silicon NPN epitaxial planer type For intermadiate frequency amplification of TV image Unit mm 2.1 0.1 0.425 1.25 0.1 0.425 Features High transition frequency fT. 1 Satisfactory linearity of forward current transfer ratio hFE. S-Mini type package, allowing downsizing of the equipment and 3 automatic insertion through the tape packing and the magazine 2 pa
2sc4417 e.pdf
Transistor 2SC4417 Silicon NPN epitaxial planer type For intermadiate frequency amplification of TV image Unit mm 2.1 0.1 0.425 1.25 0.1 0.425 Features High transition frequency fT. 1 Satisfactory linearity of forward current transfer ratio hFE. S-Mini type package, allowing downsizing of the equipment and 3 automatic insertion through the tape packing and the magazine 2 pa
2sc4410 e.pdf
Transistor 2SC4410 Silicon NPN epitaxial planer type For UHF amplification Unit mm 2.1 0.1 Features 0.425 1.25 0.1 0.425 Allowing the small current and low voltage operation. High transition frequency fT. 1 S-Mini type package, allowing downsizing of the equipment and 3 automatic insertion through the tape packing and the magazine packing. 2 Absolute Maximum Ratings (Ta=25 C
2sc4420.pdf
Power Transistors 2SC4420 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit mm 15.0 0.3 5.0 0.2 Features 11.0 0.2 3.2 High-speed switching High collector to base voltage VCBO 3.2 0.1 Wide area of safe operation (ASO) Satisfactory linearity of foward current transfer ratio hFE Full-pack package which can be installed to the hea
2sc4467.pdf
UNISONIC TECHNOLOGIES CO., LTD 2SC4467 NPN EPITAXIAL SILICON TRANSISTOR SILICON NPN TRIPLE DIFFUSED PLANAR TRANSISTOR DESCRIPTION The UTC 2SC4467 is a silicon NPN triple diffused planar transistor, it uses UTC s advanced technology to provide the customers with high DC current gain and high collector-base breakdown voltage, etc. The UTC 2SC4467 is suitable for audio an
2sc4466.pdf
UNISONIC TECHNOLOGIES CO., LTD 2SC4466 Preliminary NPN EPITAXIAL SILICON TRANSISTOR SILICON NPN TRIPLE DIFFUSED PLANAR TRANSISTOR DESCRIPTION The UTC 2SC4466 is a silicon NPN triple diffused planar transistor, it uses UTC s advanced technology to provide the customers with high DC current gain and high collector-base breakdown voltage, etc. The UTC 2SC4466 is suitable
2sc4416.pdf
2SC4416 Silicon NPN Epitaxial Application UHF Frequency conversion, Wide band amplifier Outline MPAK 3 1 1. Base 2. Emitter 2 3. Collector 2SC4416 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 25 V Collector to emitter voltage VCEO 13 V Emitter to base voltage VEBO 3V Collector current IC 50 mA Collector power dissipation PC 15
2sc4462.pdf
2SC4462 Silicon NPN Epitaxial Application UHF frequency converter Outline CMPAK 3 1 1. Emitter 2. Base 2 3. Collector 2SC4462 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 30 V Collector to emitter voltage VCEO 25 V Emitter to base voltage VEBO 4V Collector current IC 20 mA Collector power dissipation PC 100 mW Junction temper
2sc4499.pdf
2SC4499(L)/(S) Silicon NPN Triple Diffused Application High speed and high voltage switching Outline DPAK 4 4 1 2 1. Base 3 2. Collector 3. Emitter S Type 12 4. Collector 3 L Type 2SC4499(L)/(S) Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 500 V Collector to emitter voltage VCEO 400 V Emitter to base voltage VEBO 10 V Co
2sc4422.pdf
2SC4422 Silicon NPN Epitaxial Application VHF / UHF wide band amplifier Outline UPAK 1 2 3 4 1. Base 2. Collector 3. Emitter 4. Collector (Flange) 2SC4422 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 15 V Collector to emitter voltage VCEO 11 V Emitter to base voltage VEBO 2V Collector current IC 50 mA Collector power dissipa
2sc4463.pdf
2SC4463 Silicon NPN Epitaxial Application UHF frequency converter Outline CMPAK 3 1 1. Emitter 2. Base 2 3. Collector 2SC4463 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 30 V Collector to emitter voltage VCEO 20 V Emitter to base voltage VEBO 3V Collector current IC 50 mA Collector power dissipation PC 100 mW Junction temper
2sc4445.pdf
JMnic Product Specification Silicon NPN Power Transistors 2SC4445 DESCRIPTION With TO-3PML package High voltage. High speed switching APPLICATIONS For switching regulator and general purpose applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-3PML) and symbol 3 Emitter Aabsolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDI
2sc4448.pdf
Product Specification www.jmnic.com Silicon Power Transistors 2SC4448 DESCRIPTION With TO-220F package High voltage ,high frequency APPLICATIONS Chroma output applications for HDTV Video output applications for high resolution display PINNING PIN DESCRIPTION 1 Base 2 Collector 3 emitter Fig.1 simplified outline (TO-220F) and symbol Absolute maximum ratings(Ta=
2sc4460.pdf
Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC4460 DESCRIPTION With TO-3PML package High breakdown voltage, high reliability. Fast switching speed. Wide ASO. APPLICATIONS Audio and general purpose PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-3PML) and symbol Maximum absolute ratings(Ta=25 ) SYMB
2sc4467.pdf
JMnic Product Specification Silicon NPN Power Transistors 2SC4467 DESCRIPTION With TO-3PN package Complement to type 2SA1694 APPLICATIONS Audio and general purpose PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 Emitter Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDITIONS VALUE UNIT V
2sc4468.pdf
JMnic Product Specification Silicon NPN Power Transistors 2SC4468 DESCRIPTION With TO-3PN package Complement to type 2SA1695 APPLICATIONS Audio and general purpose PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 Emitter Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDITIONS VALUE UNIT V
2sc4466.pdf
JMnic Product Specification Silicon NPN Power Transistors 2SC4466 DESCRIPTION With TO-3PN package Complement to type 2SA1693 APPLICATIONS Audio and general purpose PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 Emitter Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDITIONS VALUE UNIT
2sc4434.pdf
2SC4434 Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor) Application Switching Regulator, Lighting Inverter, and General Purpose External Dimensions MT-100(TO3P) Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) Symbol 2SC4434 Unit Symbol Conditions 2SC4434 Unit 0.2 4.8 0.4 15.6 0.1 9.6 2.0 VCBO 500 V I
2sc4445.pdf
2SC4445 Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor) Application Switching Regulator and General Purpose (Ta=25 C) External Dimensions FM100(TO3PF) Absolute maximum ratings (Ta=25 C) Electrical Characteristics Symbol Symbol 2SC4445 Unit Conditions 2SC4445 Unit 0.2 0.2 5.5 15.6 0.2 3.45 ICBO VCBO 900 V VCB=800V 100max
2sc4467.pdf
2SC4467 Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1694) Application Audio and General Purpose External Dimensions MT-100(TO3P) Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) Symbol 2SC4467 Unit Symbol Conditions 2SC4467 Unit 0.2 4.8 0.4 15.6 0.1 VCBO 160 V ICBO VCB=160V 10max A 9.6 2.0 IEBO VCEO 120 V VEB=6V 10max
2sc4495.pdf
High hFE LOW VCE (sat) 2SC4495 Silicon NPN Triple Diffused Planar Transistor Application Audio Temperature Compensation and General Purpose Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) External Dimensions FM20(TO220F) Symbol 2SC4495 Symbol Conditions 2SC4495 Unit Unit 0.2 4.2 0.2 10.1 c0.5 2.8 VCBO 80 ICBO VCB=80V 10max A V VCEO 50 IEBO VEB
2sc4468.pdf
2SC4468 Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1695) Application Audio and General Purpose Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) External Dimensions MT-100(TO3P) Symbol 2SC4468 Unit Symbol Conditions 2SC4468 Unit 0.2 4.8 0.4 15.6 VCBO 200 V ICBO VCB=200V 10max A 0.1 9.6 2.0 VCEO 140 V IEBO VEB=6V 10max
2sc4466.pdf
2SC4466 Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1693) Application Audio and General Purpose External Dimensions MT-100(TO3P) Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) Symbol 2SC4466 Symbol Conditions 2SC4466 Unit Unit 0.2 4.8 0.4 15.6 0.1 VCBO 120 ICBO VCB=120V 10max A 9.6 2.0 V VCEO 80 IEBO VEB=6V 10max A
2sc4418.pdf
2SC4418 Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor) Application Switching Regulator and General Purpose External Dimensions FM20(TO220F) Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) Symbol 2SC4418 Unit Symbol Conditions 2SC4418 Unit 0.2 4.2 0.2 10.1 c0.5 2.8 VCBO 500 V ICBO VCB=500V 100max A
2sc4458l.pdf
2SC4458L(BR3DD4458LF) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220F NPN Silicon NPN transistor in a TO-220F Plastic Package. / Features High voltage. / Applications DC-DC Switching regulator applications, High voltage switching applications, High speed DC-DC c
2sc4416.pdf
SMD Type Transistors NPN Transistors 2SC4416 SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=50mA Collector Emitter Voltage VCEO=13V 1 2 +0.05 0.95+0.1 -0.1 0.1 -0.01 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 25 Collecto
2sc4432.pdf
SMD Type Transistors NPN Transistors 2SC4432 SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features High power gain. High cutoff frequency. 1 2 Complementary to 2SA1815 +0.05 0.95+0.1 -0.1 0.1 -0.01 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 40 Collecto
2sc4453.pdf
SMD Type Transistors NPN Transistors 2SC4453 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 Features Collector Current Capability IC=200mA 1 2 Collector Emitter Voltage VCEO=40V +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 40 Coll
2sc4409.pdf
SMD Type Transistors NPN Transistors 2SC4409 1.70 0.1 Features Low collector saturation voltage High speed switching time Small flat package 0.42 0.1 0.46 0.1 PC = 1 2 W (Mounted on a ceramic substrate) Complementary to 2SA1681 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage
2sc4412.pdf
SMD Type Transistors NPN Transistors 2SC4412 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 Features Collector Current Capability IC=50mA 1 2 Collector Emitter Voltage VCEO=300V +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 300 Col
2sc4422.pdf
SMD Type Transistors NPN Transistors 2SC4422 SOT-89 Unit mm 1.70 0.1 Features Collector Current Capability IC=50mA Collector Emitter Voltage VCEO=11V 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 15 Collector - Emitter Voltage VCEO 11 V Emitter - Base Voltage VE
2sc4443.pdf
SMD Type Transistors NPN Transistors 2SC4443 Features Fast switching speed. High gain-bandwidth product. Low saturation voltage. Complementary to 2SA1685 1 Base 2 Emitter 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 40 Collector - Emitter Voltage VCEO 20 V Emitter - Base Voltage VEBO 5
2sc4497.pdf
SMD Type Transistors NPN Transistors 2SC4497 SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=100mA Collector Emitter Voltage VCEO=300V 1 2 +0.1 0.95-0.1 Complement to 2SA1721 0.1+0.05 -0.01 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - B
2sc4467o 2sc4467p 2sc4467y.pdf
SPTECH Product Specification SPTECH Silicon NPN Power Transistors 2SC4467 DESCRIPTION With TO-3PN package Complement to type 2SA1694 APPLICATIONS Audio and general purpose PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 Emitter Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDITIONS VALUE UN
2sc4428.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4428 DESCRIPTION High Breakdown Voltage- V = 800V(Min) (BR)CEO Fast Switching speed Wide Area of Safe Operation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator Applications ABSOLUTE MAXIMUM RATINGS(Ta=25 )
2sc4434.pdf
isc Silicon NPN Power Transistor 2SC4434 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 400V(Min) (BR)CEO High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator, lighting inverter, and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALU
2sc4461.pdf
isc Silicon NPN Power Transistor 2SC4461 DESCRIPTION High Breakdown Voltage- V = 500V(Min) (BR)CEO Fast Switching speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator applications ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT V Collector-Base Vo
2sc4438.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4438 DESCRIPTION High Breakdown Voltage- V = 1500V(Min) (BR)CBO High Switching Speed High Reliability 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Ultrahigh-definition color display horizontal deflection output applications ABSOLUTE MAXI
2sc4445.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4445 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 800V(Min) (BR)CEO High Switching Speed Wide Area of Safe Operation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator and general purpose applicatio
2sc4429.pdf
isc Silicon NPN Power Transistor 2SC4429 DESCRIPTION High Breakdown Voltage- V = 800V(Min) (BR)CEO Fast Switching speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator Applications ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT V Collector-Base Vo
2sc4448.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4448 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 250V(Min) (BR)CEO High DC Current Gain 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Chroma output applications for HDTV Video output applications for high resolution display ABSOLU
2sc4460.pdf
isc Silicon NPN Power Transistor 2SC4460 DESCRIPTION High Breakdown Voltage- V = 500V(Min) (BR)CEO Fast Switching speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator applications ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT V Collector-Base Vo
2sc4421.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4421 DESCRIPTION Collector-Base Breakdown Voltage- V = 500V(Min.) (BR)CBO Wide Area of Safe Operation High Speed Switching 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high speed switching applications. ABSOLUTE MAXIMUM RA
2sc4467.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4467 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 120V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SA1694 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and general purpose applications ABSOLUTE MA
2sc4425.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4425 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 400V(Min) (BR)CEO High Switching Speed Wide Area of Safe Operation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator and general purpose applicatio
2sc4426.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4426 DESCRIPTION High Breakdown Voltage- V = 800V(Min) (BR)CEO Fast Switching speed Wide Area of Safe Operation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator Applications ABSOLUTE MAXIMUM RATINGS(Ta=25 )
2sc4419.pdf
isc Silicon NPN Power Transistor 2SC4419 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 800V(Min) (BR)CEO High Switching Speed High Reliability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators Ultrasonic generators High frequency inverters General purpose power amplifiers ABSOLUTE MAXI
2sc4495.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4495 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 50V(Min) (BR)CEO High DC Current Gain- h = 500(Min)@I = 0.5A FE C Fast switching speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Audio temperature compensation and general purpose ABSOLUTE MAXI
2sc4424.pdf
isc Silicon NPN Power Transistor 2SC4424 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 400V(Min) (BR)CEO High Switching Speed High Reliability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER
2sc4468.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4468 DESCRIPTION With TO-3PN package Complement to type 2SA1695 APPLICATIONS Audio and general purpose PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 Emitter Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDIT
2sc4466.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4466 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 80V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SA1693 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and general purpose applications ABSOLUTE MAX
2sc4430.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4430 DESCRIPTION NPN triple diffused planar silicon transistor High Switching Speed Wide Area of Safe Operation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulator applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAME
2sc4423.pdf
isc Silicon NPN Power Transistor 2SC4423 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 400V(Min) (BR)CEO High Switching Speed High Reliability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER
2sc4478.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4478 DESCRIPTION Fast switching speed NPN epitaxial planar silicon transistor 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High deflection CRT display Horizontal deflection output applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PAR
2sc4442.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4442 DESCRIPTION Collector-Base Breakdown Voltage- V = 500V(Min.) (BR)CBO Wide Area of Safe Operation High Speed Switching 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high speed switching applications. ABSOLUTE MAXIMUM RA
2sc4427.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4427 DESCRIPTION High Breakdown Voltage- V = 800V(Min) (BR)CEO Fast Switching speed Wide Area of Safe Operation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator Applications ABSOLUTE MAXIMUM RATINGS(Ta=25 )
2sc4437.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4437 DESCRIPTION High Breakdown Voltage- V = 1500V(Min) (BR)CBO High Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Ultrahigh-definition color display horizontal deflection output applications ABSOLUTE MAXIMUM RATINGS(T =25
Другие транзисторы: 2SC4394, 2SC4396, 2SC4397, 2SC4398, 2SC4399, 2SC4399-3, 2SC4399-4, 2SC4399-5, TIP35C, 2SC440, 2SC4400, 2SC4400-3, 2SC4400-4, 2SC4400-5, 2SC4401, 2SC4402, 2SC4403
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