2SC4409 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC4409 Power Amplifier Applications Unit: mm Power switching applications Low collector saturation voltage: VCE (sat) = 0.5V (max) (at I = 1A) C High speed switching time: t = 500ns (typ.) stg Small flat package P = 1~2 W (Mounted on ceramic substrate) C Complementary to 2SA1681 Ma

2SC4497 TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process) 2SC4497 High Voltage Control Applications Unit: mm High voltage: VCBO = 300 V, VCEO = 300 V Low saturation voltage: V = 0.5 V (max) CE (sat) Small collector output capacitance: C = 3 pF (typ.) ob Complementary to 2SA1721 Maximum Ratings (Ta == 25C) ==Characteristics Symbol Ra

Ordering number:EN2851NPN Triple Diffused Planar Silicon Transistor2SC4428800V/6A Switching Regulator ApplicationsFeatures Package Dimensions High breakdown voltage, high reliability.unit:mm Fast switching speed (tf : 0.1 s typ).2039D Wide ASO.[2SC4428] Adoption of MBIT process.16.05.63.4 Micaless package facilitating easy mounting. 3.12.82.0 2

Ordering number:EN3330NPN Triple Diffused Planar Silicon Transistor2SC4459500V/10A Switching Regulator ApplicationsFeatures Package Dimensions High breakdown voltage, high reliability.unit:mm Fast switching speed.2039D Wide ASO.[2SC4459] Adoption of MBIT process.16.05.63.4 Micaless package facilitating mounting. 3.12.82.0 2.01.00.61 : Base

Ordering number:EN3200PNP/NPN Epitaxial Planar Silicon Transistors2SA1685/2SC4443High-Speed Switching ApplicationsFeatures Package Dimensions Fast switching speed.unit:mm High gain-bandwidth product.2059 Low saturation voltage.[2SA1685/2SC4443]B : BaseC : CollectorE : Emitter( ) : 2SA1685SANYO : MCPSpecificationsAbsolute Maximum Ratings at Ta = 25C

Ordering number : ENN3184A2SC4432NPN Epitaxial Planar Silicon Transistor2SC4432High-FrequencyGeneral-Purpose Amplifier ApplicationsFeaturesPackage Dimensions High power gain.unit : mm High cutoff frequency.2018B Small Cob, Cre.[2SC4432] Ultrasmall-sized package permitting the 2SC4432-applied sets to be made small and slim.0.40.1630 to 0.11 0.9

Ordering number : ENN2812A2SC4453NPN Epitaxial Planar Silicon Transistor2SC4453High-Speed Switching ApplicationsFeaturesPackage Dimensions Fast switching speed.unit : mm Low collector saturation voltage.2018B High gain-bandwidth product.[2SC4453] Small collector capacity. Ultrasmall-sized package permitting the 2SC4453-0.40.16applied sets to be m

Ordering number:EN2757NPN Epitaxial Planar Silicon Transistor2SC4404UHF Local Oscillator,Wide-Band Amplifier ApplicationsApplications Package Dimensions UHF OSC, wide-band amplifiers. unit:mm2059BFeatures [2SC4404]0.3 High cutoff frequency : fT=5.0GHz typ0.15 High power gain : MAG=14dB typ (f=0.9GHz)3 Small noise figure : NF=2.2dB typ (f=0.9GHz)0~0.1

Ordering number:EN2813NPN Epitaxial Planar Silicon Transistor2SC4454High-Speed Switching ApplicationsFeatures Package Dimensions Fast switching speed.unit:mm Low collector saturation voltage.2033A High gain-bandwidth product.[2SC4454] Small collector capacity.2.24.00.40.50.40.41 2 31.3 1.3 1 : Emitter2 : Collector3 : Base3.03.8SANYO :

Ordering number:EN3097PNP/NPN Epitaxial Planar Silicon Transistors2SA1710/2SC4490High-Definition CRT DisplayVideo Output ApplicationsFeatures Package Dimensions High breakdown voltage (VCEO 300V).unit:mm Excellent high frequency characteristic.2064 Adoption of MBIT process.[2SA1710/2SC4490]E : EmitterC : CollectorB : Base( ) : 2SA1710SANYO : NMPSpec

Ordering number:EN3791NPN Triple Diffused Planar Silicon Transistor2SC4435Ultrahigh-Definition Color DisplayHorizontal Deflection Output ApplicationsFeatures Package Dimensions Fast switching speed (tf=300ns max).unit:mm High brocking voltage (VCBO=1500V).2022A High reliability (Adoption of HVP process).[2SC4435] Adoption of MBIT process.15.63.24.814.

Ordering number:EN3099NPN Triple Diffused Planar Silicon Transistor2SC4493High-Voltage Amplifier,High-Voltage Switching ApplicationsFeatures Package Dimensions High breakdown voltage.unit:mm Small Cob.2049C High reliability (Adoption of HVP process).[2SC4493] Intended for high-density mounting (Suitable for sets10.24.51.3whose height is restricted).

Ordering number:EN3332NPN Triple Diffused Planar Silicon Transistor2SC4461500V/25A Switching Regulator ApplicationsFeatures Package Dimensions High breakdown voltage, high reliability.unit:mm Fast switching speed.2039D Wide ASO.[2SC4461] Adoption of MBIT process.16.05.63.4 Micaless package facilitating mounting. 3.12.82.0 2.01.00.61 : Base

Ordering number:ENN3096PNP/NPN Epitaxial Planar Silicon Transistors2SA1709/2SC4489High-Voltage Switching ApplicationsFeatures Package Dimensions Adoption of FBET, MBIT processes.unit:mm High breakdown voltage, large current capacity.2064A Fast switching speed.[2SA1709/2SC4489]2.51.456.9 1.00.60.9 0.51 2 30.451 : Base2 : Collector( ) 2SA17093 :

Ordering number:EN3036NPN Epitaxial Planar Silicon Transistor2SC4491L Load (Various Drivers)Switching ApplicationsApplications Package Dimensions Suitable for use in switching of L load (motorunit:mmdrivers, printer hammer drivers, relay drivers).2064A[2SC4491]2.51.45Features6.9 1.0 Darlington connection. On-chip Zener diode of 60 10V between collector

Ordering number:EN3025PNP/NPN Epitaxial Planar Silicon Transistors2SA1705/2SC4485Low-Frequency Power Amplifier ApplicationsApplications Package Dimensions Voltage regulators, relay drivers, lamp drivers. unit:mm2064Features [2SA1705/2SC4485] Adoption of FBET process. Fast switching speed.E : EmitterC : CollectorB : Base( ) : 2SA1705SANYO : NMPSpecification

Ordering number:EN3096PNP/NPN Epitaxial Planar Silicon Transistors2SA1709/2SC4489High-Voltage Switching ApplicationsFeatures Package Dimensions Adoption of FBET, MBIT processes.unit:mm High breakdown voltage, large current capacity.2064 Fast switching speed.[2SA1709/2SC4489]E : EmitterC : CollectorB : Base( ) 2SA1709SANYO : NMPSpecificationsAbsolute Ma

Ordering number : EN3094A2SA1708 / 2SC4488SANYO SemiconductorsDATA SHEETPNP / NPN Epitaxial Planar Silicon Transistors2SA1708 / 2SC4488High-Voltage Switching ApplicationsFeatures Adoption of FBET, MBIT processes. High breakdown voltage, large current capacity. Fast switching speed.Specifications ( ) : 2SA1708Absolute Maximum Ratings at Ta=25CParameter Symbol

Ordering number:EN3094PNP/NPN Epitaxial Planar Silicon Transistors2SA1708/2SC4488High-Voltage Switching ApplicationsFeatures Package Dimensions Adoption of FBET, MBIT processes.unit:mm High breakdown voltage, large current capacity.2064 Fast switching speed.[2SA1708/2SC4488]E : EmitterC : CollectorB : Base( ) : 2SA1708SANYO : NMPSpecificationsAbsolute

Ordering number:ENN3235NPN Epitaxial Planar Silicon Transistor2SC4482High-Current Switching ApplicationsFeatures Package Dimensions Low saturation voltage.unit:mm Large current capacity.2064A High-speed switching.[2SC4482]2.51.456.9 1.00.60.9 0.51 2 30.451 : Emitter2 : Collector3 : Base2.54 2.54SANYO : NMPSpecificationsAbsolute Maximum Ra

Ordering number:EN3018PNP/NPN Epitaxial Planar Silicon Transistors2SA1697/2SC4474High-Definition CRT Display,Video Output ApplicationsApplications Package Dimensions High-definition CRT display video output, wide-bandunit:mmamplifier.2041[2SA1697/2SC4474]Features High fT : fT=300MHz. High breakdown voltage : VCEO=200V min. Small reverse transfer capacitan

Ordering number:EN3013PNP/NPN Epitaxial Planar Silicon Transistors2SA1687/2SC4446Low-FrequencyGeneral-Purpose Amplifier ApplicationsFeatures Package Dimensions Very small-sized package permitting the 2SA1687/unit:mm2SC4446-applied sets to be made small and slim.2059 High VEBO.[2SA1687/2SC4446]B : BaseC : CollectorE : Emitter( ) : 2SA1687SANYO : MCPSpecifi

Ordering number:EN2760NPN Epitaxial Planar Silicon Transistor2SC4407VHF/UHF Mixer,Local Oscillator ApplicationsApplications Package Dimensions VHF/UHF mixers, frequency converters, localunit:mmoscillators.2059B[2SC4407]0.3Features0.15 High cutoff frequency : fT=3.0GHz typ3 High power gain : PG=12dB typ (f=0.9GHz)0~0.1 Small noise figure : NF=3.0dB

Ordering number:EN3026PNP/NPN Epitaxial Planar Silicon Transistors2SA1706/2SC4486High-Current Switching ApplicationsApplications Package Dimensions Voltage regulators, relay drivers, lamp drivers. unit:mm2064Features [2SA1706/2SC4486] Adoption of FBET, MBIT processes. Large current capacity and wide ASO. Fast switching speed.E : EmitterC : CollectorB : Base

Ordering number:EN2852NPN Triple Diffused Planar Silicon Transistor2SC4429800V/8A Switching Regulator ApplicationsFeatures Package Dimensions High breakdown voltage, high reliability.unit:mm Fast switching speed (tf : 0.1 s typ).2039D Wide ASO.[2SC4429] Adoption of MBIT process.16.05.63.4 Micaless package facilitating easy mounting. 3.12.82.0 2

Ordering number:EN3331NPN Triple Diffused Planar Silicon Transistor2SC4460500V/15A Switching Regulator ApplicationsFeatures Package Dimensions High breakdown voltage, high reliability.unit:mm Fast switching speed.2039D Wide ASO.[2SC4460] Adoption of MBIT process.16.05.63.4 Micaless package facilitating mounting. 3.12.82.0 2.01.00.61 : Base

Ordering number:EN3195NPN Epitaxial Planar Silicon Transistor2SC4400High-FrequencyGeneral-Purpose Amplifier ApplicationsFeatures Package Dimensions High power gain.unit:mm High cutoff frequency.2059B Small Cob, Cre.[2SC4400] Very small-sized package permitting the 2SC4400-0.30.15applied sets to be made small and slim.30~0.11 20.3 0.60.65 0.65

Ordering number:EN2759ANPN Epitaxial Planar Silicon Transistor2SC4406VHF Frequency Mixer,Local Oscillator ApplicationsApplications Package Dimensions VHF mixer, frequency converters, local oscillators. unit:mm2059BFeatures [2SC4406]0.3 High cutoff frequency : fT=1.2GHz typ0.15 High power gain : PG=15dB typ (f=0.4GHz)3 Good dependence of fT on current.0~

Ordering number:EN3553NPN Epitaxial Planar Silicon Transistor2SC4433HF Amplifier ApplicationsFeatures Package Dimensions High power gain : PG=28dB typ (f=100MHz).unit:mm High cutoff frequency : fT=750MHz typ.2033A Small Cob, Cre.[2SC4433]2.24.00.40.50.40.41 2 31 : Emitter1.3 1.32 : Collector3 : Base3.03.8SANYO : SPASpecificationsAbsol

Ordering number:EN2814NPN Epitaxial Planar Silicon Transistor2SC4455High-Speed Switching ApplicationsFeatures Package Dimensions Fast switching speed.unit:mm Low collector saturation voltage.2061A High gain-bandwidth product.[2SC4455] Small collector capacity.5.04.04.00.450.50.440.451 : Emitter2 : Base3 : Collector1 2 3SANYO : NPJEDEC

Ordering number:EN2848NPN Triple Diffused Planar Silicon Transistor2SC4425400V/25A Switching Regulator ApplicationsFeatures Package Dimensions High breakdown voltage, high reliability.unit:mm Fast switching speed (tf : 0.1 s typ).2039D Wide ASO.[2SC4425] Adoption of MBIT process.16.05.63.4 Micaless package facilitating easy mounting. 3.12.82.0

Ordering number:EN2923NPN Epitaxial Planar Silicon Transistor2SC4413Low-FrequencyGeneral-Purpose Amplifier ApplicationsFeatures Package Dimensions Very small-sized package permitting the 2SC4413-unit:mmapplied sets to be made small and slim.2059B Adoption of FBET process.[2SC4413] High DC current gain.0.30.15 Low collector-to-emitter saturation voltage.

Ordering number:EN3328NPN Triple Diffused Planar Silicon Transistor2SC4457500V/4A Switching Regulator ApplicationsFeatures Package Dimensions High breakdown voltage, high reliability.unit:mm Fast switching speed.2039D Wide ASO.[2SC4457] Adoption of MBIT process.16.05.63.4 Micaless package facilitating mounting. 3.12.82.0 2.01.00.61 : Base

Ordering number:EN2758NPN Epitaxial Planar Silicon Transistor2SC4405UHF, Low-Noise,Wide-Band Amplifier ApplicationsApplications Package Dimensions UHF, low-noise amplifiers, wide-band amplifiers. unit:mm2059BFeatures [2SC4405]0.3 High cutoff frequency : fT=5.0GHz typ0.15 High power gain : MAG=14dB typ (f=0.9GHz)3 Small noise figure : NF=1.5dB typ (f=0.9GH

Ordering number:EN2849NPN Triple Diffused Planar Silicon Transistor2SC4426800V/3A Switching Regulator ApplicationsFeatures Package Dimensions High breakdown voltage, high reliability.unit:mm Fast switching speed (tf : 0.1 s typ).2039D Wide ASO.[2SC4426] Adoption of MBIT process.16.05.63.4 Micaless package facilitating easy mounting. 3.12.82.0 2

Ordering number:EN3024PNP/NPN Epitaxial Planar Silicon Transistors2SA1704/2SC4484High-Current Driver ApplicationsApplications Package Dimensions Voltage regulators, relay drivers. lamp drivers. unit:mm2064Features [2SA1704/2SC4484] Adoption of FBET, MBIT processes. Low collector-to-emitter voltage. Large current capacity and wide ASO. Fast switching speed.

Ordering number:EN2847NPN Triple Diffused Planar Silicon Transistor2SC4424400V/16A Switching Regulator ApplicationsFeatures Package Dimensions High breakdown voltage, high reliability.unit:mm Fast switching speed (tf : 0.1 s typ).2039D Wide ASO.[2SC4424] Adoption of MBIT process.16.05.63.4 Micaless package facilitating easy mounting. 3.12.82.0

Ordering number:EN2754NPN Epitaxial Planar Silicon Transistor2SC4401VHF/UHF Mixer, Local Oscillator,Low-Voltage Amplifier ApplicationsApplications Package Dimensions VHF/UHF MIX/OSC, low-voltage high-frequencyunit:mmamplifiers.2059B[2SC4401]0.3Features0.15 Low-voltage operation3: fT=3.0GHz typ (VCE=3V)0~0.1: MAG=11dB typ (VCE=3V, IC=3mA): NF=3.0dB typ

Ordering number:EN2853NPN Triple Diffused Planar Silicon Transistor2SC4430800V/12A Switching Regulator ApplicationsFeatures Package Dimensions High breakdown voltage, high reliability.unit:mm Fast switching speed (tf : 0.1 s typ).2039D Wide ASO.[2SC4430] Adoption of MBIT process.16.05.63.4 Micaless package facilitating easy mounting. 3.12.82.0

Ordering number:ENN3093PNP/NPN Epitaxial Planar Silicon Transistors2SA1707/2SC4487High-Current Switching ApplicationsFeatures Package Dimensions Adoption of FBET, MBIT processes.unit:mm Large current capacity, wide ASO.2064A Low collector-to-emitter saturation voltage.[2SA1707/2SC4487] Fast switching speed.2.51.456.9 1.00.60.9 0.51 2 30.451 : Em

Ordering number:EN3794NPN Triple Diffused Planar Silicon Transistor2SC4441Ultrahigh-Definition Monocuro DisplayHorizontal Deflection Output ApplicationsFeatures Package Dimensions High reliability (Adoption of HVP process).unit:mm Fast switching speed.2041A High breakdown voltage.[2SC4441] Wide ASO. 4.510.02.8 Adoption of MBIT process.3.2 Mica

Ordering number:EN2854NPN Triple Diffused Planar Silicon Transistor2SC4423400V/12A Switching Regulator ApplicationsFeatures Package Dimensions High breakdown voltage, high reliability.unit:mm Fast switching speed (tf : 0.1 s typ).2039D Wide ASO.[2SC4423] Adoption of MBIT process.16.05.63.4 Micaless package facilitating easy mounting. 3.12.82.0

Ordering number:EN3793NPN Triple Diffused Planar Silicon Transistor2SC4440Ultrahigh-Definition Monochrome DisplayHorizontal Deflection Output ApplicationsFeatures Package Dimensions High reliability (Adoption of HVP process).unit:mm Fast switching speed.2041A High brocking voltage.[2SC4440] Wide ASO. 4.510.02.8 Adoption of MBIT process.3.2 Mic

Ordering number:EN3093PNP/NPN Epitaxial Planar Silicon Transistors2SA1707/2SC4487High-Current Switching ApplicationsFeatures Package Dimensions Adoption of FBET, MBIT processes.unit:mm Large current capacity, wide ASO.2064 Low collector-to-emitter saturation voltage.[2SA1707/2SC4487] Fast switching speed.E : EmitterC : CollectorB : Base( ) : 2SA1707SA

Ordering number:EN3234NPN Epitaxial Planar Silicon Transistor2SC4480Low-Frequency General-Purpose Amplifier,General Driver ApplicationsFeatures Package Dimensions Large current capacity.unit:mm Adoption of MBIT process.2064A High DC current gain.[2SC4480]2.5 Low collector-to-emitter saturation voltage.1.45 High VEBO.6.9 1.00.60.9 0.51 2 30.

Ordering number:EN3101NPN Triple Diffused Planar Silicon Transistor2SC44501500V/5mA High-Voltage Amplifier,High-Voltage Switching ApplicationsFeatures Package Dimensions High breakdown voltage.unit:mm Small Cob.2010C Wide ASO.[2SC4450] High reliability (Adoption of HVP process).10.24.53.65.11.31.21 : Base0.80.42 : Collector1 2 33 : Emi

Ordering number:EN3017PNP/NPN Epitaxial Planar Silicon Transistors2SA1696/2SC4473High-Definition CRT Display,Video Output ApplicationsApplications Package Dimensions High-definition CRT display video output, wide-bandunit:mmamplifier.2041[2SA1696/2SC4473]Features High fT : fT=500MHz. High breakdown voltage : VCEO=120V min. Small reverse transfer capacitan

Ordering number:EN3338NPN Triple Diffused Planar Silicon Transistor2SC44751800V/3mA High-Voltage Amplifier,High-Voltage Switching ApplicationsApplications Package Dimensions High voltage amplifier.unit:mm High voltage switching.2010C Dynamic focus.[2SC4475]10.24.53.65.11.3Features High breakdown voltage (VCEO min=1800V). Small Cob (Cob typ=1.

Ordering number:EN3023PNP/NPN Epitaxial Planar Silicon Transistor2SA1703/2SC4483Low-Frequency Amplifier,Electronic Governor ApplicationsFeatures Package Dimensions Low collector-to-emitter saturation voltage.unit:mm2064[2SA1703/2SC4483]E : EmitterC : CollectorB : Base( ) : 2SA1703SANYO : NMPSpecificationsAbsolute Maximum Ratings at Ta = 25CParameter Symbol

Ordering number : ENN3019B2SC4412NPN Triple Diffused Planar Silicon Transistor2SC4412TV Camera DeflectionHigh-Voltage Driver ApplicationsFeaturesPackage Dimensions High breakdown voltage(VCEO300V).unit : mm Small reverse transfer capacitance and excellent high2018Bfrequency characteristic(Cre : 1.0pF typ).[2SC4412] Excellent DC current gain ratio(hFE rati

Ordering number:EN3022PNP/NPN Epitaxial Planar Silicon Transistors2SA1701/2SC4481Low-FrequencyGeneral-Purpose Amplifier ApplicationsApplications Package Dimensions AF power amplifier, medium-speed switching, small-unit:mmsized motor driver applications.2064[2SA1701/2SC4481]Features Large current capacity. Low collector-to-emitter saturation voltage.E : Emitt

Ordering number:EN3339NPN Triple Diffused Planar Silicon Transistor2SC44761800V/10mA High-Voltage Amplifier,High-Voltage Switching ApplicationsApplications Package Dimensions High voltage amplifier.unit:mm High voltage switching.2010C Dynamic focus.[2SC4476]10.24.53.65.11.3Features High breakdown voltage (VCEO min=1800V). Small Cob (Cob typ=1

Ordering number : ENN3329A 2SC4458NPN Triple Diffused Planar Silicon Transistors2SC4458Switching Regulator ApplicationsFeatures High breakdown voltage, high reliability. High-speed switching. Wide ASO. Adoption of MBIT process. Attachment workability is good by Mica-less package.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions

Ordering number:EN2850NPN Triple Diffused Planar Silicon Transistor2SC4427800V/4.5A Switching Regulator ApplicationsFeatures Package Dimensions High breakdown voltage, high reliability.unit:mm Fast switching speed (tf : 0.1 s typ).2039D Wide ASO.[2SC4427] Adoption of MBIT process.16.05.63.4 Micaless package facilitating easy mounting. 3.12.82.0

Ordering number:EN3792NPN Triple Diffused Planar Silicon Transistor2SC4437Ultrahigh-Definition Color DisplayHorizontal Deflection Output ApplicationsFeatures Package Dimensions High speed (tf=0.3ns max).unit:mm High breakdown voltage (VCBO=1500V).2039D High reliability (adoption of HVP process).[2SC4437] Adoption of MBIT process.16.05.63.43.12.82.

Ordering number:EN2811NPN Epitaxial Planar Silicon Transistor2SC4452High-Speed Switching ApplicationsFeatures Package Dimensions Fast switching speed.unit:mm Low collector saturation voltage.2059B High gain-bandwidth product.[2SC4452] Small collector capacity.0.30.15 Very small-sized package permitting the 2SC4452-3applied sets to be made small and

Ordering number:EN3012PNP/NPN Epitaxial Planar Silicon Transistors2SA1683/2SC4414Low-Frequency General-Purpose Amplifier,Low-Frequency Power Amplifier ApplicationsFeatures Package Dimensions Adoption of FBET process.unit:mm High breakdown voltage : VCEO>80V.2033[2SA1683/2SC4414]B : BaseC : CollectorE : Emitter( ) : 2SA1683SANYO : SPASpecificationsAbsolute

Ordering number:EN3102NPN Triple Diffused Planar Silicon Transistor2SC44511500V/15mA High-Voltage Amplifier,High-Voltage Switching ApplicationsFeatures Package Dimensions High breakdown voltage.unit:mm Small Cob.2010C Wide ASO.[2SC4451] High reliability (Adoption of HVP process).10.24.53.65.11.31.21 : Base0.80.42 : Collector1 2 33 : Em

Ordering number:EN2755NPN Epitaxial Planar Silicon Transistor2SC4402VHF/UHF Mixer, Local Oscillator,Low-Voltage Amplifier ApplicationsApplications Package Dimensions VHF/UHF MIX/OSC, low-voltage high-frequencyunit:mmamplifiers.2059B[2SC4402]0.3Features0.15 Low-voltage operation3: fT=3.0GHz typ (VCE=3V)0~0.1: MAG=12dB typ (VCE=3V, IC=10mA): NF=1.5dB ty

Ordering number:EN2756NPN Epitaxial Planar Silicon Transistor2SC4403VHF/UHF Local Oscillator ApplicationsApplications Package Dimensions VHF/UHF oscillators. unit:mm2059BFeatures [2SC4403]0.3 High cutoff frequency : fT=3.0GHz typ0.15 High power gain : MAG=12dB typ (f=0.9GHz)3 Small noise figure : NF=2.5dB typ (f=0.9GHz)0~0.1 Very small-sized package

Ordering number:EN3241NPN Triple Diffused Planar Silicon Transistor2SC4449TV Camera Deflection,High-Voltage Driver ApplicationsFeatures Package Dimensions High breakdown voltage.unit:mm Small reverse transfer capacitance and excellent high2003Bfrequency characteristic.[2SC4449] Excellent DC current gain.5.04.04.0 Adoption of FBET process.0.450.5

Ordering number : EN3094B2SA1708/2SC4488Bipolar Transistorhttp://onsemi.com( ) ( ) ( ) ( )- 100V, - 1A, Low VCE sat , PNP NPN Single NMPFeatures Adoption of FBET, MBIT processes High breakdown voltage, large current capacity Fast switching speed( )2SA1708SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitCollector-to-Ba

Ordering number : EN3235A2SC4482Bipolar Transistorhttp://onsemi.com( )20V, 5A, Low VCE sat , NPN Single NMPFeatures Low saturation voltage Large current capacity High-speed switchingSpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitCollector-to-Base Voltage VCBO 60 VCollector-to-Emitter Voltage VCEO 20 VEmitter-to-Ba

Ordering number : EN3093A2SA1707/2SC4487Bipolar Transistorhttp://onsemi.com(-)50V, (-)3A, Low VCE(sat), (PNP)NPN Single NMPFeatures Adoption of FBET, MBIT processes Large current capacity, wide ASO Low collector-to-emitter saturation voltage Fast switching speed( )2SA1707SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings

Ordering number : EN3096A2SA1709/2SC4489Bipolar Transistorhttp://onsemi.com(-)100V, (-)2A, Low VCE(sat), (PNP)NPN Single NMPFeatures Adoption of FBET, MBIT processes High breakdown voltage, large current capacity Fast switching speed( )2SA1709SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitCollector-to-Base Voltage VC

Transistor2SC4410Silicon NPN epitaxial planer typeFor UHF amplificationUnit: mm2.1 0.1Features 0.425 1.25 0.1 0.425Allowing the small current and low voltage operation.High transition frequency fT.1S-Mini type package, allowing downsizing of the equipment and3automatic insertion through the tape packing and the magazinepacking. 2Absolute Maximum Ratings (Ta=25C

Transistor2SC4417Silicon NPN epitaxial planer typeFor intermadiate frequency amplification of TV imageUnit: mm2.1 0.10.425 1.25 0.1 0.425FeaturesHigh transition frequency fT. 1Satisfactory linearity of forward current transfer ratio hFE.S-Mini type package, allowing downsizing of the equipment and3automatic insertion through the tape packing and the magazine2pa

Transistor2SC4417Silicon NPN epitaxial planer typeFor intermadiate frequency amplification of TV imageUnit: mm2.1 0.10.425 1.25 0.1 0.425FeaturesHigh transition frequency fT. 1Satisfactory linearity of forward current transfer ratio hFE.S-Mini type package, allowing downsizing of the equipment and3automatic insertion through the tape packing and the magazine2pa

Transistor2SC4410Silicon NPN epitaxial planer typeFor UHF amplificationUnit: mm2.1 0.1Features 0.425 1.25 0.1 0.425Allowing the small current and low voltage operation.High transition frequency fT.1S-Mini type package, allowing downsizing of the equipment and3automatic insertion through the tape packing and the magazinepacking. 2Absolute Maximum Ratings (Ta=25C

Power Transistors2SC4420Silicon NPN triple diffusion planar typeFor high breakdown voltage high-speed switchingUnit: mm15.0 0.3 5.0 0.2Features11.0 0.2 3.2High-speed switchingHigh collector to base voltage VCBO 3.2 0.1Wide area of safe operation (ASO)Satisfactory linearity of foward current transfer ratio hFEFull-pack package which can be installed to the hea

UNISONIC TECHNOLOGIES CO., LTD 2SC4467 NPN EPITAXIAL SILICON TRANSISTOR SILICON NPN TRIPLE DIFFUSED PLANAR TRANSISTOR DESCRIPTION The UTC 2SC4467 is a silicon NPN triple diffused planar transistor, it uses UTCs advanced technology to provide the customers with high DC current gain and high collector-base breakdown voltage, etc. The UTC 2SC4467 is suitable for audio an

UNISONIC TECHNOLOGIES CO., LTD 2SC4466 Preliminary NPN EPITAXIAL SILICON TRANSISTOR SILICON NPN TRIPLE DIFFUSED PLANAR TRANSISTOR DESCRIPTION The UTC 2SC4466 is a silicon NPN triple diffused planar transistor, it uses UTCs advanced technology to provide the customers with high DC current gain and high collector-base breakdown voltage, etc. The UTC 2SC4466 is suitable

2SC4416Silicon NPN EpitaxialApplicationUHF Frequency conversion, Wide band amplifierOutlineMPAK311. Base2. Emitter23. Collector2SC4416Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 25 VCollector to emitter voltage VCEO 13 VEmitter to base voltage VEBO 3VCollector current IC 50 mACollector power dissipation PC 15

2SC4462Silicon NPN EpitaxialApplicationUHF frequency converterOutlineCMPAK311. Emitter2. Base23. Collector2SC4462Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 30 VCollector to emitter voltage VCEO 25 VEmitter to base voltage VEBO 4VCollector current IC 20 mACollector power dissipation PC 100 mWJunction temper

2SC4499(L)/(S)Silicon NPN Triple DiffusedApplicationHigh speed and high voltage switchingOutlineDPAK44121. Base3 2. Collector3. EmitterS Type 124. Collector3L Type2SC4499(L)/(S)Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 500 VCollector to emitter voltage VCEO 400 VEmitter to base voltage VEBO 10 VCo

2SC4422Silicon NPN EpitaxialApplicationVHF / UHF wide band amplifierOutlineUPAK12341. Base2. Collector3. Emitter4. Collector (Flange)2SC4422Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 15 VCollector to emitter voltage VCEO 11 VEmitter to base voltage VEBO 2VCollector current IC 50 mACollector power dissipa

2SC4463Silicon NPN EpitaxialApplicationUHF frequency converterOutlineCMPAK311. Emitter2. Base23. Collector2SC4463Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 30 VCollector to emitter voltage VCEO 20 VEmitter to base voltage VEBO 3VCollector current IC 50 mACollector power dissipation PC 100 mWJunction temper

JMnic Product SpecificationSilicon NPN Power Transistors 2SC4445 DESCRIPTION With TO-3PML package High voltage. High speed switching APPLICATIONS For switching regulator and general purpose applications PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-3PML) and symbol 3 EmitterAabsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDI

Product Specification www.jmnic.com Silicon Power Transistors 2SC4448 DESCRIPTION With TO-220F package High voltage ,high frequency APPLICATIONS Chroma output applications for HDTV Video output applications for high resolution display PINNING PIN DESCRIPTION1 Base 2 Collector3 emitterFig.1 simplified outline (TO-220F) and symbol Absolute maximum ratings(Ta=

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC4460 DESCRIPTION With TO-3PML package High breakdown voltage, high reliability. Fast switching speed. Wide ASO. APPLICATIONS Audio and general purpose PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterFig.1 simplified outline (TO-3PML) and symbol Maximum absolute ratings(Ta=25) SYMB

JMnic Product SpecificationSilicon NPN Power Transistors 2SC4467 DESCRIPTION With TO-3PN package Complement to type 2SA1694 APPLICATIONS Audio and general purpose PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol3 EmitterAbsolute maximum ratings(Ta=) SYMBOL PARAMETER CONDITIONS VALUE UNITV

JMnic Product SpecificationSilicon NPN Power Transistors 2SC4468 DESCRIPTION With TO-3PN package Complement to type 2SA1695 APPLICATIONS Audio and general purpose PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol3 EmitterAbsolute maximum ratings(Ta=) SYMBOL PARAMETER CONDITIONS VALUE UNITV

JMnic Product SpecificationSilicon NPN Power Transistors 2SC4466 DESCRIPTION With TO-3PN package Complement to type 2SA1693 APPLICATIONS Audio and general purpose PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 EmitterAbsolute maximum ratings(Ta=) SYMBOL PARAMETER CONDITIONS VALUE UNIT

2SC4434Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor)Application : Switching Regulator, Lighting Inverter, and General PurposeExternal Dimensions MT-100(TO3P) Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C)Symbol 2SC4434 Unit Symbol Conditions 2SC4434 Unit0.24.80.415.60.19.6 2.0VCBO 500 V I

2SC4445Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor) Application : Switching Regulator and General Purpose(Ta=25C) External Dimensions FM100(TO3PF) Absolute maximum ratings (Ta=25C) Electrical CharacteristicsSymbolSymbol 2SC4445 Unit Conditions 2SC4445 Unit0.20.2 5.515.60.23.45ICBOVCBO 900 V VCB=800V 100max

2SC4467Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1694)Application : Audio and General PurposeExternal Dimensions MT-100(TO3P) Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C)Symbol 2SC4467 Unit Symbol Conditions 2SC4467 Unit0.24.80.415.60.1VCBO 160 V ICBO VCB=160V 10max A 9.6 2.0IEBOVCEO 120 V VEB=6V 10max

High hFELOW VCE (sat) 2SC4495Silicon NPN Triple Diffused Planar Transistor Application : Audio Temperature Compensation and General Purpose Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) External Dimensions FM20(TO220F)Symbol 2SC4495 Symbol Conditions 2SC4495 UnitUnit0.24.20.210.1c0.52.8VCBO 80 ICBO VCB=80V 10max AVVCEO 50 IEBO VEB

2SC4468Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1695)Application : Audio and General Purpose Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) External Dimensions MT-100(TO3P)Symbol 2SC4468 Unit Symbol Conditions 2SC4468 Unit0.24.80.415.6VCBO 200 V ICBO VCB=200V 10max A0.19.6 2.0VCEO 140 VIEBO VEB=6V 10max

2SC4466Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1693)Application : Audio and General PurposeExternal Dimensions MT-100(TO3P) Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C)Symbol 2SC4466 Symbol Conditions 2SC4466 UnitUnit0.24.80.415.60.1VCBO 120 ICBO VCB=120V 10max A 9.6 2.0VVCEO 80 IEBO VEB=6V 10max A

2SC4418Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor) Application : Switching Regulator and General PurposeExternal Dimensions FM20(TO220F) Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C)Symbol 2SC4418 Unit Symbol Conditions 2SC4418Unit0.24.20.210.1c0.52.8VCBO 500 V ICBO VCB=500V 100max A

2SC4458L(BR3DD4458LF) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220F NPN Silicon NPN transistor in a TO-220F Plastic Package. / Features High voltage. / Applications DC-DC Switching regulator applications, High voltage switching applications, High speed DC-DC c

SMD Type TransistorsNPN Transistors2SC4416SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13 Features Collector Current Capability IC=50mA Collector Emitter Voltage VCEO=13V 1 2+0.050.95+0.1-0.1 0.1 -0.011.9+0.1-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 25 Collecto

SMD Type TransistorsNPN Transistors2SC4432SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13 Features High power gain. High cutoff frequency.1 2 Complementary to 2SA1815+0.050.95+0.1-0.1 0.1 -0.011.9+0.1-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 40 Collecto

SMD Type TransistorsNPN Transistors2SC4453SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.13 Features Collector Current Capability IC=200mA1 2 Collector Emitter Voltage VCEO=40V+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 40 Coll

SMD Type TransistorsNPN Transistors2SC44091.70 0.1 Features Low collector saturation voltage High speed switching time Small flat package0.42 0.10.46 0.1 PC = 1~2 W (Mounted on a ceramic substrate) Complementary to 2SA16811.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage

SMD Type TransistorsNPN Transistors2SC4412SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.13 Features Collector Current Capability IC=50mA1 2 Collector Emitter Voltage VCEO=300V+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 300 Col

SMD Type TransistorsNPN Transistors2SC4422SOT-89Unit:mm1.70 0.1 Features Collector Current Capability IC=50mA Collector Emitter Voltage VCEO=11V0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 15 Collector - Emitter Voltage VCEO 11 V Emitter - Base Voltage VE

SMD Type TransistorsNPN Transistors2SC4443 Features Fast switching speed. High gain-bandwidth product. Low saturation voltage. Complementary to 2SA16851 Base2 Emitter3 Collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 40 Collector - Emitter Voltage VCEO 20 V Emitter - Base Voltage VEBO 5

SMD Type TransistorsNPN Transistors2SC4497SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13 Features Collector Current Capability IC=100mA Collector Emitter Voltage VCEO=300V1 2+0.10.95-0.1 Complement to 2SA1721 0.1+0.05-0.011.9+0.1-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - B

SPTECH Product Specification SPTECH Silicon NPN Power Transistors 2SC4467 DESCRIPTIONWith TO-3PN packageComplement to type 2SA1694APPLICATIONS Audio and general purposePINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol3 EmitterAbsolute maximum ratings(Ta=) SYMBOL PARAMETER CONDITIONS VALUE UN

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4428DESCRIPTIONHigh Breakdown Voltage-: V = 800V(Min)(BR)CEOFast Switching speedWide Area of Safe Operation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator ApplicationsABSOLUTE MAXIMUM RATINGS(Ta=25)

isc Silicon NPN Power Transistor 2SC4434DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator, lighting inverter, andgeneral purpose applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALU

isc Silicon NPN Power Transistor 2SC4461DESCRIPTIONHigh Breakdown Voltage-: V = 500V(Min)(BR)CEOFast Switching speedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator applicationsABSOLUTE MAXIMUM RATINGS(Ta=25)SYMBOL PARAMETER VALUE UNITV Collector-Base Vo

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4438DESCRIPTIONHigh Breakdown Voltage-: V = 1500V(Min)(BR)CBOHigh Switching SpeedHigh Reliability100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSUltrahigh-definition color display horizontal deflectionoutput applicationsABSOLUTE MAXI

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4445DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 800V(Min)(BR)CEOHigh Switching SpeedWide Area of Safe Operation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator and general purposeapplicatio

isc Silicon NPN Power Transistor 2SC4429DESCRIPTIONHigh Breakdown Voltage-: V = 800V(Min)(BR)CEOFast Switching speedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator ApplicationsABSOLUTE MAXIMUM RATINGS(Ta=25)SYMBOL PARAMETER VALUE UNITV Collector-Base Vo

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4448DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 250V(Min)(BR)CEOHigh DC Current Gain100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSChroma output applications for HDTVVideo output applications for high resolution displayABSOLU

isc Silicon NPN Power Transistor 2SC4460DESCRIPTIONHigh Breakdown Voltage-: V = 500V(Min)(BR)CEOFast Switching speedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator applicationsABSOLUTE MAXIMUM RATINGS(Ta=25)SYMBOL PARAMETER VALUE UNITV Collector-Base Vo

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4421DESCRIPTION Collector-Base Breakdown Voltage-: V = 500V(Min.)(BR)CBOWide Area of Safe OperationHigh Speed Switching100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high speed switching applications.ABSOLUTE MAXIMUM RA

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4467DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-V = 120V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SA1694100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio and general purpose applicationsABSOLUTE MA

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4425DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOHigh Switching SpeedWide Area of Safe Operation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator and general purposeapplicatio

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4426DESCRIPTIONHigh Breakdown Voltage-: V = 800V(Min)(BR)CEOFast Switching speedWide Area of Safe Operation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator ApplicationsABSOLUTE MAXIMUM RATINGS(Ta=25)

isc Silicon NPN Power Transistor 2SC4419DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 800V(Min)(BR)CEOHigh Switching SpeedHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsUltrasonic generatorsHigh frequency invertersGeneral purpose power amplifiersABSOLUTE MAXI

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4495DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 50V(Min)(BR)CEOHigh DC Current Gain-: h = 500(Min)@I = 0.5AFE CFast switching speedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAudio temperature compensation and general purposeABSOLUTE MAXI

isc Silicon NPN Power Transistor 2SC4424DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOHigh Switching SpeedHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator and general purposeapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4468 DESCRIPTION With TO-3PN package Complement to type 2SA1695 APPLICATIONS Audio and general purpose PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol3 EmitterAbsolute maximum ratings(Ta=) SYMBOL PARAMETER CONDIT

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4466DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-V = 80V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SA1693100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio and general purpose applicationsABSOLUTE MAX

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4430DESCRIPTIONNPN triple diffused planar silicon transistorHigh Switching SpeedWide Area of Safe Operation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulator applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAME

isc Silicon NPN Power Transistor 2SC4423DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOHigh Switching SpeedHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator and general purposeapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4478DESCRIPTIONFast switching speedNPN epitaxial planar silicon transistor100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh deflection CRT displayHorizontal deflection output applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PAR

isc Silicon NPN Power Transistor 2SC4458DESCRIPTIONHigh Breakdown Voltage: V = 800V(Min)(BR)CBOHigh Switching SpeedHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsUltrasonic generatorsHigh frequency invertersGeneral purpose power amplifiersABSOLUTE MAXIMUM RATINGS(T =25

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4442DESCRIPTION Collector-Base Breakdown Voltage-: V = 500V(Min.)(BR)CBOWide Area of Safe OperationHigh Speed Switching100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high speed switching applications.ABSOLUTE MAXIMUM RA

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4427DESCRIPTIONHigh Breakdown Voltage-: V = 800V(Min)(BR)CEOFast Switching speedWide Area of Safe Operation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator ApplicationsABSOLUTE MAXIMUM RATINGS(Ta=25)

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4437DESCRIPTIONHigh Breakdown Voltage-: V = 1500V(Min)(BR)CBOHigh Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSUltrahigh-definition color display horizontal deflectionoutput applicationsABSOLUTE MAXIMUM RATINGS(T =25

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4418DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOHigh Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator and general purposeapplications.ABSOLUTE MAXIMUM RATINGS(T =25