Биполярный транзистор 2SC440 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SC440
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 0.5 W
Макcимально допустимое напряжение коллектор-база (Ucb): 25 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 15 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 0.1 A
Предельная температура PN-перехода (Tj): 175 °C
Граничная частота коэффициента передачи тока (ft): 200 MHz
Ёмкость коллекторного перехода (Cc): 7 pf
Статический коэффициент передачи тока (hfe): 50
Корпус транзистора: TO5
2SC440 Datasheet (PDF)
2sc4409.pdf
2SC4409 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC4409 Power Amplifier Applications Unit: mm Power switching applications Low collector saturation voltage: VCE (sat) = 0.5V (max) (at I = 1A) C High speed switching time: t = 500ns (typ.) stg Small flat package P = 1~2 W (Mounted on ceramic substrate) C Complementary to 2SA1681 Ma
2sc4404.pdf
Ordering number:EN2757NPN Epitaxial Planar Silicon Transistor2SC4404UHF Local Oscillator,Wide-Band Amplifier ApplicationsApplications Package Dimensions UHF OSC, wide-band amplifiers. unit:mm2059BFeatures [2SC4404]0.3 High cutoff frequency : fT=5.0GHz typ0.15 High power gain : MAG=14dB typ (f=0.9GHz)3 Small noise figure : NF=2.2dB typ (f=0.9GHz)0~0.1
2sc4407.pdf
Ordering number:EN2760NPN Epitaxial Planar Silicon Transistor2SC4407VHF/UHF Mixer,Local Oscillator ApplicationsApplications Package Dimensions VHF/UHF mixers, frequency converters, localunit:mmoscillators.2059B[2SC4407]0.3Features0.15 High cutoff frequency : fT=3.0GHz typ3 High power gain : PG=12dB typ (f=0.9GHz)0~0.1 Small noise figure : NF=3.0dB
2sc4400.pdf
Ordering number:EN3195NPN Epitaxial Planar Silicon Transistor2SC4400High-FrequencyGeneral-Purpose Amplifier ApplicationsFeatures Package Dimensions High power gain.unit:mm High cutoff frequency.2059B Small Cob, Cre.[2SC4400] Very small-sized package permitting the 2SC4400-0.30.15applied sets to be made small and slim.30~0.11 20.3 0.60.65 0.65
2sc4406.pdf
Ordering number:EN2759ANPN Epitaxial Planar Silicon Transistor2SC4406VHF Frequency Mixer,Local Oscillator ApplicationsApplications Package Dimensions VHF mixer, frequency converters, local oscillators. unit:mm2059BFeatures [2SC4406]0.3 High cutoff frequency : fT=1.2GHz typ0.15 High power gain : PG=15dB typ (f=0.4GHz)3 Good dependence of fT on current.0~
2sc4405.pdf
Ordering number:EN2758NPN Epitaxial Planar Silicon Transistor2SC4405UHF, Low-Noise,Wide-Band Amplifier ApplicationsApplications Package Dimensions UHF, low-noise amplifiers, wide-band amplifiers. unit:mm2059BFeatures [2SC4405]0.3 High cutoff frequency : fT=5.0GHz typ0.15 High power gain : MAG=14dB typ (f=0.9GHz)3 Small noise figure : NF=1.5dB typ (f=0.9GH
2sc4401.pdf
Ordering number:EN2754NPN Epitaxial Planar Silicon Transistor2SC4401VHF/UHF Mixer, Local Oscillator,Low-Voltage Amplifier ApplicationsApplications Package Dimensions VHF/UHF MIX/OSC, low-voltage high-frequencyunit:mmamplifiers.2059B[2SC4401]0.3Features0.15 Low-voltage operation3: fT=3.0GHz typ (VCE=3V)0~0.1: MAG=11dB typ (VCE=3V, IC=3mA): NF=3.0dB typ
2sc4402.pdf
Ordering number:EN2755NPN Epitaxial Planar Silicon Transistor2SC4402VHF/UHF Mixer, Local Oscillator,Low-Voltage Amplifier ApplicationsApplications Package Dimensions VHF/UHF MIX/OSC, low-voltage high-frequencyunit:mmamplifiers.2059B[2SC4402]0.3Features0.15 Low-voltage operation3: fT=3.0GHz typ (VCE=3V)0~0.1: MAG=12dB typ (VCE=3V, IC=10mA): NF=1.5dB ty
2sc4403.pdf
Ordering number:EN2756NPN Epitaxial Planar Silicon Transistor2SC4403VHF/UHF Local Oscillator ApplicationsApplications Package Dimensions VHF/UHF oscillators. unit:mm2059BFeatures [2SC4403]0.3 High cutoff frequency : fT=3.0GHz typ0.15 High power gain : MAG=12dB typ (f=0.9GHz)3 Small noise figure : NF=2.5dB typ (f=0.9GHz)0~0.1 Very small-sized package
2sc4409.pdf
SMD Type TransistorsNPN Transistors2SC44091.70 0.1 Features Low collector saturation voltage High speed switching time Small flat package0.42 0.10.46 0.1 PC = 1~2 W (Mounted on a ceramic substrate) Complementary to 2SA16811.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage
Другие транзисторы... 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , 2N3055 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050