Биполярный транзистор 2SC4417 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SC4417
Маркировка: 2Z
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 0.15 W
Макcимально допустимое напряжение коллектор-база (Ucb): 45 V
Макcимальный постоянный ток коллектора (Ic): 0.05 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 500 MHz
Статический коэффициент передачи тока (hfe): 30
Корпус транзистора: TO236
2SC4417 Datasheet (PDF)
2sc4417.pdf
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Transistor2SC4417Silicon NPN epitaxial planer typeFor intermadiate frequency amplification of TV imageUnit: mm2.1 0.10.425 1.25 0.1 0.425FeaturesHigh transition frequency fT. 1Satisfactory linearity of forward current transfer ratio hFE.S-Mini type package, allowing downsizing of the equipment and3automatic insertion through the tape packing and the magazine2pa
2sc4417 e.pdf
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Transistor2SC4417Silicon NPN epitaxial planer typeFor intermadiate frequency amplification of TV imageUnit: mm2.1 0.10.425 1.25 0.1 0.425FeaturesHigh transition frequency fT. 1Satisfactory linearity of forward current transfer ratio hFE.S-Mini type package, allowing downsizing of the equipment and3automatic insertion through the tape packing and the magazine2pa
2sc4413.pdf
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Ordering number:EN2923NPN Epitaxial Planar Silicon Transistor2SC4413Low-FrequencyGeneral-Purpose Amplifier ApplicationsFeatures Package Dimensions Very small-sized package permitting the 2SC4413-unit:mmapplied sets to be made small and slim.2059B Adoption of FBET process.[2SC4413] High DC current gain.0.30.15 Low collector-to-emitter saturation voltage.
2sc4412.pdf
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Ordering number : ENN3019B2SC4412NPN Triple Diffused Planar Silicon Transistor2SC4412TV Camera DeflectionHigh-Voltage Driver ApplicationsFeaturesPackage Dimensions High breakdown voltage(VCEO300V).unit : mm Small reverse transfer capacitance and excellent high2018Bfrequency characteristic(Cre : 1.0pF typ).[2SC4412] Excellent DC current gain ratio(hFE rati
2sa1683 2sc4414.pdf
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Ordering number:EN3012PNP/NPN Epitaxial Planar Silicon Transistors2SA1683/2SC4414Low-Frequency General-Purpose Amplifier,Low-Frequency Power Amplifier ApplicationsFeatures Package Dimensions Adoption of FBET process.unit:mm High breakdown voltage : VCEO>80V.2033[2SA1683/2SC4414]B : BaseC : CollectorE : Emitter( ) : 2SA1683SANYO : SPASpecificationsAbsolute
2sc4410.pdf
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Transistor2SC4410Silicon NPN epitaxial planer typeFor UHF amplificationUnit: mm2.1 0.1Features 0.425 1.25 0.1 0.425Allowing the small current and low voltage operation.High transition frequency fT.1S-Mini type package, allowing downsizing of the equipment and3automatic insertion through the tape packing and the magazinepacking. 2Absolute Maximum Ratings (Ta=25C
2sc4410 e.pdf
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Transistor2SC4410Silicon NPN epitaxial planer typeFor UHF amplificationUnit: mm2.1 0.1Features 0.425 1.25 0.1 0.425Allowing the small current and low voltage operation.High transition frequency fT.1S-Mini type package, allowing downsizing of the equipment and3automatic insertion through the tape packing and the magazinepacking. 2Absolute Maximum Ratings (Ta=25C
2sc4416.pdf
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2SC4416Silicon NPN EpitaxialApplicationUHF Frequency conversion, Wide band amplifierOutlineMPAK311. Base2. Emitter23. Collector2SC4416Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 25 VCollector to emitter voltage VCEO 13 VEmitter to base voltage VEBO 3VCollector current IC 50 mACollector power dissipation PC 15
2sc4418.pdf
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2SC4418Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor) Application : Switching Regulator and General PurposeExternal Dimensions FM20(TO220F) Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C)Symbol 2SC4418 Unit Symbol Conditions 2SC4418Unit0.24.20.210.1c0.52.8VCBO 500 V ICBO VCB=500V 100max A
2sc4416.pdf
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SMD Type TransistorsNPN Transistors2SC4416SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13 Features Collector Current Capability IC=50mA Collector Emitter Voltage VCEO=13V 1 2+0.050.95+0.1-0.1 0.1 -0.011.9+0.1-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 25 Collecto
2sc4412.pdf
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SMD Type TransistorsNPN Transistors2SC4412SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.13 Features Collector Current Capability IC=50mA1 2 Collector Emitter Voltage VCEO=300V+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 300 Col
2sc4419.pdf
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isc Silicon NPN Power Transistor 2SC4419DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 800V(Min)(BR)CEOHigh Switching SpeedHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsUltrasonic generatorsHigh frequency invertersGeneral purpose power amplifiersABSOLUTE MAXI
2sc4418.pdf
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INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4418DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOHigh Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator and general purposeapplications.ABSOLUTE MAXIMUM RATINGS(T =25
Другие транзисторы... 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 13009 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
History: 2N1837A