Биполярный транзистор 2SC442
- описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SC442
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 0.5
W
Макcимально допустимое напряжение коллектор-база (Ucb): 25
V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 15
V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5
V
Макcимальный постоянный ток коллектора (Ic): 0.1
A
Предельная температура PN-перехода (Tj): 175
°C
Граничная частота коэффициента передачи тока (ft): 200
MHz
Ёмкость коллекторного перехода (Cc): 7
pf
Статический коэффициент передачи тока (hfe): 50
Корпус транзистора:
TO5
Аналоги (замена) для 2SC442
2SC442
Datasheet (PDF)
0.1. Size:106K sanyo
2sc4428.pdf 
Ordering number:EN2851NPN Triple Diffused Planar Silicon Transistor2SC4428800V/6A Switching Regulator ApplicationsFeatures Package Dimensions High breakdown voltage, high reliability.unit:mm Fast switching speed (tf : 0.1 s typ).2039D Wide ASO.[2SC4428] Adoption of MBIT process.16.05.63.4 Micaless package facilitating easy mounting. 3.12.82.0 2
0.2. Size:107K sanyo
2sc4429.pdf 
Ordering number:EN2852NPN Triple Diffused Planar Silicon Transistor2SC4429800V/8A Switching Regulator ApplicationsFeatures Package Dimensions High breakdown voltage, high reliability.unit:mm Fast switching speed (tf : 0.1 s typ).2039D Wide ASO.[2SC4429] Adoption of MBIT process.16.05.63.4 Micaless package facilitating easy mounting. 3.12.82.0 2
0.3. Size:101K sanyo
2sc4425.pdf 
Ordering number:EN2848NPN Triple Diffused Planar Silicon Transistor2SC4425400V/25A Switching Regulator ApplicationsFeatures Package Dimensions High breakdown voltage, high reliability.unit:mm Fast switching speed (tf : 0.1 s typ).2039D Wide ASO.[2SC4425] Adoption of MBIT process.16.05.63.4 Micaless package facilitating easy mounting. 3.12.82.0
0.4. Size:105K sanyo
2sc4426.pdf 
Ordering number:EN2849NPN Triple Diffused Planar Silicon Transistor2SC4426800V/3A Switching Regulator ApplicationsFeatures Package Dimensions High breakdown voltage, high reliability.unit:mm Fast switching speed (tf : 0.1 s typ).2039D Wide ASO.[2SC4426] Adoption of MBIT process.16.05.63.4 Micaless package facilitating easy mounting. 3.12.82.0 2
0.5. Size:104K sanyo
2sc4424.pdf 
Ordering number:EN2847NPN Triple Diffused Planar Silicon Transistor2SC4424400V/16A Switching Regulator ApplicationsFeatures Package Dimensions High breakdown voltage, high reliability.unit:mm Fast switching speed (tf : 0.1 s typ).2039D Wide ASO.[2SC4424] Adoption of MBIT process.16.05.63.4 Micaless package facilitating easy mounting. 3.12.82.0
0.6. Size:102K sanyo
2sc4423.pdf 
Ordering number:EN2854NPN Triple Diffused Planar Silicon Transistor2SC4423400V/12A Switching Regulator ApplicationsFeatures Package Dimensions High breakdown voltage, high reliability.unit:mm Fast switching speed (tf : 0.1 s typ).2039D Wide ASO.[2SC4423] Adoption of MBIT process.16.05.63.4 Micaless package facilitating easy mounting. 3.12.82.0
0.7. Size:108K sanyo
2sc4427.pdf 
Ordering number:EN2850NPN Triple Diffused Planar Silicon Transistor2SC4427800V/4.5A Switching Regulator ApplicationsFeatures Package Dimensions High breakdown voltage, high reliability.unit:mm Fast switching speed (tf : 0.1 s typ).2039D Wide ASO.[2SC4427] Adoption of MBIT process.16.05.63.4 Micaless package facilitating easy mounting. 3.12.82.0
0.8. Size:82K panasonic
2sc4420.pdf 
Power Transistors2SC4420Silicon NPN triple diffusion planar typeFor high breakdown voltage high-speed switchingUnit: mm15.0 0.3 5.0 0.2Features11.0 0.2 3.2High-speed switchingHigh collector to base voltage VCBO 3.2 0.1Wide area of safe operation (ASO)Satisfactory linearity of foward current transfer ratio hFEFull-pack package which can be installed to the hea
0.9. Size:48K hitachi
2sc4422.pdf 
2SC4422Silicon NPN EpitaxialApplicationVHF / UHF wide band amplifierOutlineUPAK12341. Base2. Collector3. Emitter4. Collector (Flange)2SC4422Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 15 VCollector to emitter voltage VCEO 11 VEmitter to base voltage VEBO 2VCollector current IC 50 mACollector power dissipa
0.11. Size:998K kexin
2sc4422.pdf 
SMD Type TransistorsNPN Transistors2SC4422SOT-89Unit:mm1.70 0.1 Features Collector Current Capability IC=50mA Collector Emitter Voltage VCEO=11V0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 15 Collector - Emitter Voltage VCEO 11 V Emitter - Base Voltage VE
0.12. Size:195K inchange semiconductor
2sc4428.pdf 
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4428DESCRIPTIONHigh Breakdown Voltage-: V = 800V(Min)(BR)CEOFast Switching speedWide Area of Safe Operation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator ApplicationsABSOLUTE MAXIMUM RATINGS(Ta=25)
0.13. Size:225K inchange semiconductor
2sc4429.pdf 
isc Silicon NPN Power Transistor 2SC4429DESCRIPTIONHigh Breakdown Voltage-: V = 800V(Min)(BR)CEOFast Switching speedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator ApplicationsABSOLUTE MAXIMUM RATINGS(Ta=25)SYMBOL PARAMETER VALUE UNITV Collector-Base Vo
0.14. Size:184K inchange semiconductor
2sc4421.pdf 
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4421DESCRIPTION Collector-Base Breakdown Voltage-: V = 500V(Min.)(BR)CBOWide Area of Safe OperationHigh Speed Switching100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high speed switching applications.ABSOLUTE MAXIMUM RA
0.15. Size:195K inchange semiconductor
2sc4425.pdf 
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4425DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOHigh Switching SpeedWide Area of Safe Operation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator and general purposeapplicatio
0.16. Size:195K inchange semiconductor
2sc4426.pdf 
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4426DESCRIPTIONHigh Breakdown Voltage-: V = 800V(Min)(BR)CEOFast Switching speedWide Area of Safe Operation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator ApplicationsABSOLUTE MAXIMUM RATINGS(Ta=25)
0.17. Size:221K inchange semiconductor
2sc4424.pdf 
isc Silicon NPN Power Transistor 2SC4424DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOHigh Switching SpeedHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator and general purposeapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER
0.18. Size:221K inchange semiconductor
2sc4423.pdf 
isc Silicon NPN Power Transistor 2SC4423DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOHigh Switching SpeedHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator and general purposeapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER
0.19. Size:196K inchange semiconductor
2sc4427.pdf 
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4427DESCRIPTIONHigh Breakdown Voltage-: V = 800V(Min)(BR)CEOFast Switching speedWide Area of Safe Operation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator ApplicationsABSOLUTE MAXIMUM RATINGS(Ta=25)
Другие транзисторы... 2N3200
, 2N3201
, 2N3202
, 2N3203
, 2N3204
, 2N3205
, 2N3206
, 2N3207
, B772
, 2N3209
, 2N3209AQF
, 2N3209CSM
, 2N3209DCSM
, 2N3209L
, 2N321
, 2N3210
, 2N3211
.
