Справочник транзисторов. 2SC4430

 

Биполярный транзистор 2SC4430 - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: 2SC4430
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 65 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 1100 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 800 V
   Макcимальный постоянный ток коллектора (Ic): 12 A
   Предельная температура PN-перехода (Tj): 150 °C
   Граничная частота коэффициента передачи тока (ft): 15 MHz
   Статический коэффициент передачи тока (hfe): 200
   Корпус транзистора: TO218

 Аналоги (замена) для 2SC4430

 

 

2SC4430 Datasheet (PDF)

 ..1. Size:107K  sanyo
2sc4430.pdf

2SC4430
2SC4430

Ordering number:EN2853NPN Triple Diffused Planar Silicon Transistor2SC4430800V/12A Switching Regulator ApplicationsFeatures Package Dimensions High breakdown voltage, high reliability.unit:mm Fast switching speed (tf : 0.1 s typ).2039D Wide ASO.[2SC4430] Adoption of MBIT process.16.05.63.4 Micaless package facilitating easy mounting. 3.12.82.0

 ..2. Size:182K  inchange semiconductor
2sc4430.pdf

2SC4430
2SC4430

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4430DESCRIPTIONNPN triple diffused planar silicon transistorHigh Switching SpeedWide Area of Safe Operation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulator applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAME

 8.1. Size:234K  toshiba
2sc4439.pdf

2SC4430
2SC4430

 8.2. Size:23K  sanyo
2sc4432.pdf

2SC4430
2SC4430

Ordering number : ENN3184A2SC4432NPN Epitaxial Planar Silicon Transistor2SC4432High-FrequencyGeneral-Purpose Amplifier ApplicationsFeaturesPackage Dimensions High power gain.unit : mm High cutoff frequency.2018B Small Cob, Cre.[2SC4432] Ultrasmall-sized package permitting the 2SC4432-applied sets to be made small and slim.0.40.1630 to 0.11 0.9

 8.3. Size:92K  sanyo
2sc4435.pdf

2SC4430
2SC4430

Ordering number:EN3791NPN Triple Diffused Planar Silicon Transistor2SC4435Ultrahigh-Definition Color DisplayHorizontal Deflection Output ApplicationsFeatures Package Dimensions Fast switching speed (tf=300ns max).unit:mm High brocking voltage (VCBO=1500V).2022A High reliability (Adoption of HVP process).[2SC4435] Adoption of MBIT process.15.63.24.814.

 8.4. Size:132K  sanyo
2sc4438.pdf

2SC4430
2SC4430

 8.5. Size:71K  sanyo
2sc4433.pdf

2SC4430
2SC4430

Ordering number:EN3553NPN Epitaxial Planar Silicon Transistor2SC4433HF Amplifier ApplicationsFeatures Package Dimensions High power gain : PG=28dB typ (f=100MHz).unit:mm High cutoff frequency : fT=750MHz typ.2033A Small Cob, Cre.[2SC4433]2.24.00.40.50.40.41 2 31 : Emitter1.3 1.32 : Collector3 : Base3.03.8SANYO : SPASpecificationsAbsol

 8.6. Size:91K  sanyo
2sc4437.pdf

2SC4430
2SC4430

Ordering number:EN3792NPN Triple Diffused Planar Silicon Transistor2SC4437Ultrahigh-Definition Color DisplayHorizontal Deflection Output ApplicationsFeatures Package Dimensions High speed (tf=0.3ns max).unit:mm High breakdown voltage (VCBO=1500V).2039D High reliability (adoption of HVP process).[2SC4437] Adoption of MBIT process.16.05.63.43.12.82.

 8.7. Size:25K  sanken-ele
2sc4434.pdf

2SC4430

2SC4434Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor)Application : Switching Regulator, Lighting Inverter, and General PurposeExternal Dimensions MT-100(TO3P) Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C)Symbol 2SC4434 Unit Symbol Conditions 2SC4434 Unit0.24.80.415.60.19.6 2.0VCBO 500 V I

 8.8. Size:917K  kexin
2sc4432.pdf

2SC4430
2SC4430

SMD Type TransistorsNPN Transistors2SC4432SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13 Features High power gain. High cutoff frequency.1 2 Complementary to 2SA1815+0.050.95+0.1-0.1 0.1 -0.011.9+0.1-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 40 Collecto

 8.9. Size:212K  inchange semiconductor
2sc4434.pdf

2SC4430
2SC4430

isc Silicon NPN Power Transistor 2SC4434DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator, lighting inverter, andgeneral purpose applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALU

 8.10. Size:189K  inchange semiconductor
2sc4438.pdf

2SC4430
2SC4430

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4438DESCRIPTIONHigh Breakdown Voltage-: V = 1500V(Min)(BR)CBOHigh Switching SpeedHigh Reliability100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSUltrahigh-definition color display horizontal deflectionoutput applicationsABSOLUTE MAXI

 8.11. Size:189K  inchange semiconductor
2sc4437.pdf

2SC4430
2SC4430

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4437DESCRIPTIONHigh Breakdown Voltage-: V = 1500V(Min)(BR)CBOHigh Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSUltrahigh-definition color display horizontal deflectionoutput applicationsABSOLUTE MAXIMUM RATINGS(T =25

Другие транзисторы... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

History: MM4010

 

 
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