2SC4432-5 - описание и поиск аналогов

Ordering number ENN3184A 2SC4432 NPN Epitaxial Planar Silicon Transistor 2SC4432 High-Frequency General-Purpose Amplifier Applications Features Package Dimensions High power gain. unit mm High cutoff frequency. 2018B Small Cob, Cre. [2SC4432] Ultrasmall-sized package permitting the 2SC4432- applied sets to be made small and slim. 0.4 0.16 3 0 to 0.1 1 0.9

SMD Type Transistors NPN Transistors 2SC4432 SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features High power gain. High cutoff frequency. 1 2 Complementary to 2SA1815 +0.05 0.95+0.1 -0.1 0.1 -0.01 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 40 Collecto

Ordering number EN3791 NPN Triple Diffused Planar Silicon Transistor 2SC4435 Ultrahigh-Definition Color Display Horizontal Deflection Output Applications Features Package Dimensions Fast switching speed (tf=300ns max). unit mm High brocking voltage (VCBO=1500V). 2022A High reliability (Adoption of HVP process). [2SC4435] Adoption of MBIT process. 15.6 3.2 4.8 14.

Ordering number EN3553 NPN Epitaxial Planar Silicon Transistor 2SC4433 HF Amplifier Applications Features Package Dimensions High power gain PG=28dB typ (f=100MHz). unit mm High cutoff frequency fT=750MHz typ. 2033A Small Cob, Cre. [2SC4433] 2.2 4.0 0.4 0.5 0.4 0.4 1 2 3 1 Emitter 1.3 1.3 2 Collector 3 Base 3.0 3.8 SANYO SPA Specifications Absol

Ordering number EN2853 NPN Triple Diffused Planar Silicon Transistor 2SC4430 800V/12A Switching Regulator Applications Features Package Dimensions High breakdown voltage, high reliability. unit mm Fast switching speed (tf 0.1 s typ). 2039D Wide ASO. [2SC4430] Adoption of MBIT process. 16.0 5.6 3.4 Micaless package facilitating easy mounting. 3.1 2.8 2.0

Ordering number EN3792 NPN Triple Diffused Planar Silicon Transistor 2SC4437 Ultrahigh-Definition Color Display Horizontal Deflection Output Applications Features Package Dimensions High speed (tf=0.3ns max). unit mm High breakdown voltage (VCBO=1500V). 2039D High reliability (adoption of HVP process). [2SC4437] Adoption of MBIT process. 16.0 5.6 3.4 3.1 2.8 2.

2SC4434 Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor) Application Switching Regulator, Lighting Inverter, and General Purpose External Dimensions MT-100(TO3P) Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) Symbol 2SC4434 Unit Symbol Conditions 2SC4434 Unit 0.2 4.8 0.4 15.6 0.1 9.6 2.0 VCBO 500 V I

isc Silicon NPN Power Transistor 2SC4434 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 400V(Min) (BR)CEO High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator, lighting inverter, and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALU

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4438 DESCRIPTION High Breakdown Voltage- V = 1500V(Min) (BR)CBO High Switching Speed High Reliability 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Ultrahigh-definition color display horizontal deflection output applications ABSOLUTE MAXI

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4430 DESCRIPTION NPN triple diffused planar silicon transistor High Switching Speed Wide Area of Safe Operation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulator applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAME

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4437 DESCRIPTION High Breakdown Voltage- V = 1500V(Min) (BR)CBO High Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Ultrahigh-definition color display horizontal deflection output applications ABSOLUTE MAXIMUM RATINGS(T =25