Справочник транзисторов. 2SC4435

 

Биполярный транзистор 2SC4435 - описание производителя. Основные параметры. Даташиты.

Наименование производителя: 2SC4435

Тип материала: Si

Полярность: NPN

Максимальная рассеиваемая мощность (Pc): 100 W

Макcимально допустимое напряжение коллектор-база (Ucb): 1500 V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 800 V

Макcимальный постоянный ток коллектора (Ic): 5 A

Предельная температура PN-перехода (Tj): 150 °C

Статический коэффициент передачи тока (hfe): 70

Корпус транзистора: TO218

Аналоги (замена) для 2SC4435

 

 

2SC4435 Datasheet (PDF)

1.1. 2sc4435.pdf Size:92K _sanyo

2SC4435
2SC4435

Ordering number:EN3791 NPN Triple Diffused Planar Silicon Transistor 2SC4435 Ultrahigh-Definition Color Display Horizontal Deflection Output Applications Features Package Dimensions Fast switching speed (tf=300ns max). unit:mm High brocking voltage (VCBO=1500V). 2022A High reliability (Adoption of HVP process). [2SC4435] Adoption of MBIT process. 15.6 3.2 4.8 14.0 2.0

4.1. 2sc4439.pdf Size:234K _toshiba

2SC4435
2SC4435



4.2. 2sc4433.pdf Size:71K _sanyo

2SC4435
2SC4435

Ordering number:EN3553 NPN Epitaxial Planar Silicon Transistor 2SC4433 HF Amplifier Applications Features Package Dimensions High power gain : PG=28dB typ (f=100MHz). unit:mm High cutoff frequency : fT=750MHz typ. 2033A Small Cob, Cre. [2SC4433] 2.2 4.0 0.4 0.5 0.4 0.4 1 2 3 1 : Emitter 1.3 1.3 2 : Collector 3 : Base 3.0 3.8 SANYO : SPA Specifications Absolute Ma

 4.3. 2sc4438.pdf Size:132K _sanyo

2SC4435
2SC4435

4.4. 2sc4437.pdf Size:91K _sanyo

2SC4435
2SC4435

Ordering number:EN3792 NPN Triple Diffused Planar Silicon Transistor 2SC4437 Ultrahigh-Definition Color Display Horizontal Deflection Output Applications Features Package Dimensions High speed (tf=0.3ns max). unit:mm High breakdown voltage (VCBO=1500V). 2039D High reliability (adoption of HVP process). [2SC4437] Adoption of MBIT process. 16.0 5.6 3.4 3.1 2.8 2.0 2.0

 4.5. 2sc4430.pdf Size:107K _sanyo

2SC4435
2SC4435

Ordering number:EN2853 NPN Triple Diffused Planar Silicon Transistor 2SC4430 800V/12A Switching Regulator Applications Features Package Dimensions High breakdown voltage, high reliability. unit:mm Fast switching speed (tf : 0.1 s typ). 2039D Wide ASO. [2SC4430] Adoption of MBIT process. 16.0 5.6 3.4 Micaless package facilitating easy mounting. 3.1 2.8 2.0 2.0 1.0

4.6. 2sc4432.pdf Size:23K _sanyo

2SC4435
2SC4435

Ordering number : ENN3184A 2SC4432 NPN Epitaxial Planar Silicon Transistor 2SC4432 High-Frequency General-Purpose Amplifier Applications Features Package Dimensions High power gain. unit : mm High cutoff frequency. 2018B Small Cob, Cre. [2SC4432] Ultrasmall-sized package permitting the 2SC4432- applied sets to be made small and slim. 0.4 0.16 3 0 to 0.1 1 0.95 0.95 2 1

4.7. 2sc4434.pdf Size:25K _sanken-ele

2SC4435

2SC4434 Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor) Application : Switching Regulator, Lighting Inverter, and General Purpose External Dimensions MT-100(TO3P) Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) Symbol 2SC4434 Unit Symbol Conditions 2SC4434 Unit 0.2 4.8 0.4 15.6 0.1 9.6 2.0 VCBO 500 V ICBO VCB=

4.8. 2sc4438.pdf Size:261K _inchange_semiconductor

2SC4435
2SC4435

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC4438 DESCRIPTION ·High Breakdown Voltage- : V(BR)CBO= 1500V(Min) ·High Switching Speed ·High Reliability APPLICATIONS ·Ultrahigh-definition color display horizontal deflection output applications ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1

4.9. 2sc4437.pdf Size:149K _inchange_semiconductor

2SC4435
2SC4435

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4437 DESCRIPTION ·With TO-3PML package ·High speed ·High breakdown voltage ·High reliability APPLICATIONS ·Ultrahigh-definition color display ·Horizontal deflection output applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-3PML) and symbol 3 Emitter Abs

4.10. 2sc4434.pdf Size:259K _inchange_semiconductor

2SC4435
2SC4435

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC4434 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·High Switching Speed APPLICATIONS ·Designed for switching regulator, lighting inverter, and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 5

4.11. 2sc4430.pdf Size:173K _inchange_semiconductor

2SC4435
2SC4435

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4430 DESCRIPTION ·With TO-3PML package ·High breakdown voltage, high reliability. ·Fast switching speed. ·Wide area of safe operation APPLICATIONS ·Switching regulator applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-3PML) and symbol 3 Emitter Absolute

4.12. 2sc4432.pdf Size:917K _kexin

2SC4435
2SC4435

SMD Type Transistors NPN Transistors 2SC4432 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 ■ Features ● High power gain. ● High cutoff frequency. 1 2 ● Complementary to 2SA1815 +0.05 0.95+0.1 -0.1 0.1 -0.01 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 40 Collecto

Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 9012 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
Back to Top

 


2SC4435
  2SC4435
  2SC4435
 

social 

Список транзисторов

Обновления

BJT: CHDTC114EKPT | CE1A3Q | 2SC6089 | 2SC4714 | 2SD1047C | 2SB817C | FW26025A1 | 2T665B9 | 2T665A9 | MJ13001A | HSC2682 | MRF660 | MP1620 | HLD133D | BFR360F | AV8050S | 3DD5027 | 3DD2901 | 3DD2102 | 3DD313 |

 

 

 

 

Back to Top