2SC4444 - описание и поиск аналогов

 8.1. Size:211K  toshiba
 2sc4448.pdf 

 8.2. Size:152K  sanyo
 2sa1685 2sc4443.pdf 

Ordering number EN3200 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1685/2SC4443 High-Speed Switching Applications Features Package Dimensions Fast switching speed. unit mm High gain-bandwidth product. 2059 Low saturation voltage. [2SA1685/2SC4443] B Base C Collector E Emitter ( ) 2SA1685 SANYO MCP Specifications Absolute Maximum Ratings at Ta = 25 C

 8.3. Size:143K  sanyo
 2sa1687 2sc4446.pdf 

Ordering number EN3013 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1687/2SC4446 Low-Frequency General-Purpose Amplifier Applications Features Package Dimensions Very small-sized package permitting the 2SA1687/ unit mm 2SC4446-applied sets to be made small and slim. 2059 High VEBO. [2SA1687/2SC4446] B Base C Collector E Emitter ( ) 2SA1687 SANYO MCP Specifi

 8.4. Size:101K  sanyo
 2sc4441.pdf 

Ordering number EN3794 NPN Triple Diffused Planar Silicon Transistor 2SC4441 Ultrahigh-Definition Monocuro Display Horizontal Deflection Output Applications Features Package Dimensions High reliability (Adoption of HVP process). unit mm Fast switching speed. 2041A High breakdown voltage. [2SC4441] Wide ASO. 4.5 10.0 2.8 Adoption of MBIT process. 3.2 Mica

 8.5. Size:97K  sanyo
 2sc4440.pdf 

Ordering number EN3793 NPN Triple Diffused Planar Silicon Transistor 2SC4440 Ultrahigh-Definition Monochrome Display Horizontal Deflection Output Applications Features Package Dimensions High reliability (Adoption of HVP process). unit mm Fast switching speed. 2041A High brocking voltage. [2SC4440] Wide ASO. 4.5 10.0 2.8 Adoption of MBIT process. 3.2 Mic

 8.6. Size:77K  sanyo
 2sc4449.pdf 

Ordering number EN3241 NPN Triple Diffused Planar Silicon Transistor 2SC4449 TV Camera Deflection, High-Voltage Driver Applications Features Package Dimensions High breakdown voltage. unit mm Small reverse transfer capacitance and excellent high 2003B frequency characteristic. [2SC4449] Excellent DC current gain. 5.0 4.0 4.0 Adoption of FBET process. 0.45 0.5

 8.7. Size:241K  jmnic
 2sc4445.pdf 

JMnic Product Specification Silicon NPN Power Transistors 2SC4445 DESCRIPTION With TO-3PML package High voltage. High speed switching APPLICATIONS For switching regulator and general purpose applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-3PML) and symbol 3 Emitter Aabsolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDI

 8.8. Size:107K  jmnic
 2sc4448.pdf 

Product Specification www.jmnic.com Silicon Power Transistors 2SC4448 DESCRIPTION With TO-220F package High voltage ,high frequency APPLICATIONS Chroma output applications for HDTV Video output applications for high resolution display PINNING PIN DESCRIPTION 1 Base 2 Collector 3 emitter Fig.1 simplified outline (TO-220F) and symbol Absolute maximum ratings(Ta=

 8.9. Size:25K  sanken-ele
 2sc4445.pdf 

2SC4445 Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor) Application Switching Regulator and General Purpose (Ta=25 C) External Dimensions FM100(TO3PF) Absolute maximum ratings (Ta=25 C) Electrical Characteristics Symbol Symbol 2SC4445 Unit Conditions 2SC4445 Unit 0.2 0.2 5.5 15.6 0.2 3.45 ICBO VCBO 900 V VCB=800V 100max

 8.10. Size:1437K  kexin
 2sc4443.pdf 

SMD Type Transistors NPN Transistors 2SC4443 Features Fast switching speed. High gain-bandwidth product. Low saturation voltage. Complementary to 2SA1685 1 Base 2 Emitter 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 40 Collector - Emitter Voltage VCEO 20 V Emitter - Base Voltage VEBO 5

 8.11. Size:189K  inchange semiconductor
 2sc4445.pdf 

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4445 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 800V(Min) (BR)CEO High Switching Speed Wide Area of Safe Operation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator and general purpose applicatio

 8.12. Size:181K  inchange semiconductor
 2sc4448.pdf 

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4448 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 250V(Min) (BR)CEO High DC Current Gain 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Chroma output applications for HDTV Video output applications for high resolution display ABSOLU

 8.13. Size:180K  inchange semiconductor
 2sc4442.pdf 

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4442 DESCRIPTION Collector-Base Breakdown Voltage- V = 500V(Min.) (BR)CBO Wide Area of Safe Operation High Speed Switching 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high speed switching applications. ABSOLUTE MAXIMUM RA