Биполярный транзистор 2SC4451 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SC4451
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 1.75 W
Макcимально допустимое напряжение коллектор-база (Ucb): 1500 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 1500 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 0.015 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 6 MHz
Ёмкость коллекторного перехода (Cc): 1.9 pf
Статический коэффициент передачи тока (hfe): 10
Корпус транзистора: TO220
2SC4451 Datasheet (PDF)
2sc4451.pdf
Ordering number:EN3102NPN Triple Diffused Planar Silicon Transistor2SC44511500V/15mA High-Voltage Amplifier,High-Voltage Switching ApplicationsFeatures Package Dimensions High breakdown voltage.unit:mm Small Cob.2010C Wide ASO.[2SC4451] High reliability (Adoption of HVP process).10.24.53.65.11.31.21 : Base0.80.42 : Collector1 2 33 : Em
2sc4459.pdf
Ordering number:EN3330NPN Triple Diffused Planar Silicon Transistor2SC4459500V/10A Switching Regulator ApplicationsFeatures Package Dimensions High breakdown voltage, high reliability.unit:mm Fast switching speed.2039D Wide ASO.[2SC4459] Adoption of MBIT process.16.05.63.4 Micaless package facilitating mounting. 3.12.82.0 2.01.00.61 : Base
2sc4453.pdf
Ordering number : ENN2812A2SC4453NPN Epitaxial Planar Silicon Transistor2SC4453High-Speed Switching ApplicationsFeaturesPackage Dimensions Fast switching speed.unit : mm Low collector saturation voltage.2018B High gain-bandwidth product.[2SC4453] Small collector capacity. Ultrasmall-sized package permitting the 2SC4453-0.40.16applied sets to be m
2sc4454.pdf
Ordering number:EN2813NPN Epitaxial Planar Silicon Transistor2SC4454High-Speed Switching ApplicationsFeatures Package Dimensions Fast switching speed.unit:mm Low collector saturation voltage.2033A High gain-bandwidth product.[2SC4454] Small collector capacity.2.24.00.40.50.40.41 2 31.3 1.3 1 : Emitter2 : Collector3 : Base3.03.8SANYO :
2sc4455.pdf
Ordering number:EN2814NPN Epitaxial Planar Silicon Transistor2SC4455High-Speed Switching ApplicationsFeatures Package Dimensions Fast switching speed.unit:mm Low collector saturation voltage.2061A High gain-bandwidth product.[2SC4455] Small collector capacity.5.04.04.00.450.50.440.451 : Emitter2 : Base3 : Collector1 2 3SANYO : NPJEDEC
2sc4457.pdf
Ordering number:EN3328NPN Triple Diffused Planar Silicon Transistor2SC4457500V/4A Switching Regulator ApplicationsFeatures Package Dimensions High breakdown voltage, high reliability.unit:mm Fast switching speed.2039D Wide ASO.[2SC4457] Adoption of MBIT process.16.05.63.4 Micaless package facilitating mounting. 3.12.82.0 2.01.00.61 : Base
2sc4450.pdf
Ordering number:EN3101NPN Triple Diffused Planar Silicon Transistor2SC44501500V/5mA High-Voltage Amplifier,High-Voltage Switching ApplicationsFeatures Package Dimensions High breakdown voltage.unit:mm Small Cob.2010C Wide ASO.[2SC4450] High reliability (Adoption of HVP process).10.24.53.65.11.31.21 : Base0.80.42 : Collector1 2 33 : Emi
2sc4458.pdf
Ordering number : ENN3329A 2SC4458NPN Triple Diffused Planar Silicon Transistors2SC4458Switching Regulator ApplicationsFeatures High breakdown voltage, high reliability. High-speed switching. Wide ASO. Adoption of MBIT process. Attachment workability is good by Mica-less package.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions
2sc4452.pdf
Ordering number:EN2811NPN Epitaxial Planar Silicon Transistor2SC4452High-Speed Switching ApplicationsFeatures Package Dimensions Fast switching speed.unit:mm Low collector saturation voltage.2059B High gain-bandwidth product.[2SC4452] Small collector capacity.0.30.15 Very small-sized package permitting the 2SC4452-3applied sets to be made small and
2sc4458l.pdf
2SC4458L(BR3DD4458LF) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220F NPN Silicon NPN transistor in a TO-220F Plastic Package. / Features High voltage. / Applications DC-DC Switching regulator applications, High voltage switching applications, High speed DC-DC c
2sc4453.pdf
SMD Type TransistorsNPN Transistors2SC4453SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.13 Features Collector Current Capability IC=200mA1 2 Collector Emitter Voltage VCEO=40V+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 40 Coll
2sc4458.pdf
isc Silicon NPN Power Transistor 2SC4458DESCRIPTIONHigh Breakdown Voltage: V = 800V(Min)(BR)CBOHigh Switching SpeedHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsUltrasonic generatorsHigh frequency invertersGeneral purpose power amplifiersABSOLUTE MAXIMUM RATINGS(T =25
Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050