2SC4463 - описание и поиск аналогов

 ..1. Size:33K  hitachi
 2sc4463.pdf 

2SC4463 Silicon NPN Epitaxial Application UHF frequency converter Outline CMPAK 3 1 1. Emitter 2. Base 2 3. Collector 2SC4463 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 30 V Collector to emitter voltage VCEO 20 V Emitter to base voltage VEBO 3V Collector current IC 50 mA Collector power dissipation PC 100 mW Junction temper

 8.1. Size:103K  sanyo
 2sc4461.pdf 

Ordering number EN3332 NPN Triple Diffused Planar Silicon Transistor 2SC4461 500V/25A Switching Regulator Applications Features Package Dimensions High breakdown voltage, high reliability. unit mm Fast switching speed. 2039D Wide ASO. [2SC4461] Adoption of MBIT process. 16.0 5.6 3.4 Micaless package facilitating mounting. 3.1 2.8 2.0 2.0 1.0 0.6 1 Base

 8.2. Size:107K  sanyo
 2sc4460.pdf 

Ordering number EN3331 NPN Triple Diffused Planar Silicon Transistor 2SC4460 500V/15A Switching Regulator Applications Features Package Dimensions High breakdown voltage, high reliability. unit mm Fast switching speed. 2039D Wide ASO. [2SC4460] Adoption of MBIT process. 16.0 5.6 3.4 Micaless package facilitating mounting. 3.1 2.8 2.0 2.0 1.0 0.6 1 Base

 8.3. Size:169K  utc
 2sc4467.pdf 

UNISONIC TECHNOLOGIES CO., LTD 2SC4467 NPN EPITAXIAL SILICON TRANSISTOR SILICON NPN TRIPLE DIFFUSED PLANAR TRANSISTOR DESCRIPTION The UTC 2SC4467 is a silicon NPN triple diffused planar transistor, it uses UTC s advanced technology to provide the customers with high DC current gain and high collector-base breakdown voltage, etc. The UTC 2SC4467 is suitable for audio an

 8.4. Size:122K  utc
 2sc4466.pdf 

UNISONIC TECHNOLOGIES CO., LTD 2SC4466 Preliminary NPN EPITAXIAL SILICON TRANSISTOR SILICON NPN TRIPLE DIFFUSED PLANAR TRANSISTOR DESCRIPTION The UTC 2SC4466 is a silicon NPN triple diffused planar transistor, it uses UTC s advanced technology to provide the customers with high DC current gain and high collector-base breakdown voltage, etc. The UTC 2SC4466 is suitable

 8.5. Size:36K  hitachi
 2sc4462.pdf 

2SC4462 Silicon NPN Epitaxial Application UHF frequency converter Outline CMPAK 3 1 1. Emitter 2. Base 2 3. Collector 2SC4462 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 30 V Collector to emitter voltage VCEO 25 V Emitter to base voltage VEBO 4V Collector current IC 20 mA Collector power dissipation PC 100 mW Junction temper

 8.6. Size:117K  jmnic
 2sc4460.pdf 

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC4460 DESCRIPTION With TO-3PML package High breakdown voltage, high reliability. Fast switching speed. Wide ASO. APPLICATIONS Audio and general purpose PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-3PML) and symbol Maximum absolute ratings(Ta=25 ) SYMB

 8.7. Size:192K  jmnic
 2sc4467.pdf 

JMnic Product Specification Silicon NPN Power Transistors 2SC4467 DESCRIPTION With TO-3PN package Complement to type 2SA1694 APPLICATIONS Audio and general purpose PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 Emitter Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDITIONS VALUE UNIT V

 8.8. Size:192K  jmnic
 2sc4468.pdf 

JMnic Product Specification Silicon NPN Power Transistors 2SC4468 DESCRIPTION With TO-3PN package Complement to type 2SA1695 APPLICATIONS Audio and general purpose PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 Emitter Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDITIONS VALUE UNIT V

 8.9. Size:189K  jmnic
 2sc4466.pdf 

JMnic Product Specification Silicon NPN Power Transistors 2SC4466 DESCRIPTION With TO-3PN package Complement to type 2SA1693 APPLICATIONS Audio and general purpose PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 Emitter Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDITIONS VALUE UNIT

 8.10. Size:24K  sanken-ele
 2sc4467.pdf 

2SC4467 Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1694) Application Audio and General Purpose External Dimensions MT-100(TO3P) Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) Symbol 2SC4467 Unit Symbol Conditions 2SC4467 Unit 0.2 4.8 0.4 15.6 0.1 VCBO 160 V ICBO VCB=160V 10max A 9.6 2.0 IEBO VCEO 120 V VEB=6V 10max

 8.11. Size:24K  sanken-ele
 2sc4468.pdf 

2SC4468 Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1695) Application Audio and General Purpose Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) External Dimensions MT-100(TO3P) Symbol 2SC4468 Unit Symbol Conditions 2SC4468 Unit 0.2 4.8 0.4 15.6 VCBO 200 V ICBO VCB=200V 10max A 0.1 9.6 2.0 VCEO 140 V IEBO VEB=6V 10max

 8.12. Size:24K  sanken-ele
 2sc4466.pdf 

2SC4466 Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1693) Application Audio and General Purpose External Dimensions MT-100(TO3P) Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) Symbol 2SC4466 Symbol Conditions 2SC4466 Unit Unit 0.2 4.8 0.4 15.6 0.1 VCBO 120 ICBO VCB=120V 10max A 9.6 2.0 V VCEO 80 IEBO VEB=6V 10max A

 8.13. Size:403K  cn sptech
 2sc4467o 2sc4467p 2sc4467y.pdf 

SPTECH Product Specification SPTECH Silicon NPN Power Transistors 2SC4467 DESCRIPTION With TO-3PN package Complement to type 2SA1694 APPLICATIONS Audio and general purpose PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 Emitter Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDITIONS VALUE UN

 8.14. Size:225K  inchange semiconductor
 2sc4461.pdf 

isc Silicon NPN Power Transistor 2SC4461 DESCRIPTION High Breakdown Voltage- V = 500V(Min) (BR)CEO Fast Switching speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator applications ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT V Collector-Base Vo

 8.15. Size:225K  inchange semiconductor
 2sc4460.pdf 

isc Silicon NPN Power Transistor 2SC4460 DESCRIPTION High Breakdown Voltage- V = 500V(Min) (BR)CEO Fast Switching speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator applications ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT V Collector-Base Vo

 8.16. Size:194K  inchange semiconductor
 2sc4467.pdf 

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4467 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 120V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SA1694 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and general purpose applications ABSOLUTE MA

 8.17. Size:156K  inchange semiconductor
 2sc4468.pdf 

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4468 DESCRIPTION With TO-3PN package Complement to type 2SA1695 APPLICATIONS Audio and general purpose PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 Emitter Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDIT

 8.18. Size:194K  inchange semiconductor
 2sc4466.pdf 

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4466 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 80V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SA1693 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and general purpose applications ABSOLUTE MAX