2SC4485. Аналоги и основные параметры
Наименование производителя: 2SC4485
Тип материала: Si
Полярность: NPN
Предельные значения
Максимальная рассеиваемая мощность (Pc): 0.9 W
Макcимально допустимое напряжение коллектор-база (Ucb): 60 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 1 A
Предельная температура PN-перехода (Tj): 150 °C
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 150 typ MHz
Ёмкость коллекторного перехода (Cc): 8.5 pf
Статический коэффициент передачи тока (hFE): 100
Корпус транзистора: NMP
Аналоги (замена) для 2SC4485
- подборⓘ биполярного транзистора по параметрам
2SC4485 даташит
..1. Size:133K sanyo
2sc4485.pdf 
Ordering number EN3025 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1705/2SC4485 Low-Frequency Power Amplifier Applications Applications Package Dimensions Voltage regulators, relay drivers, lamp drivers. unit mm 2064 Features [2SA1705/2SC4485] Adoption of FBET process. Fast switching speed. E Emitter C Collector B Base ( ) 2SA1705 SANYO NMP Specification
8.1. Size:115K sanyo
2sa1709 2sc4489.pdf 
Ordering number ENN3096 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1709/2SC4489 High-Voltage Switching Applications Features Package Dimensions Adoption of FBET, MBIT processes. unit mm High breakdown voltage, large current capacity. 2064A Fast switching speed. [2SA1709/2SC4489] 2.5 1.45 6.9 1.0 0.6 0.9 0.5 1 2 3 0.45 1 Base 2 Collector ( ) 2SA1709 3
8.2. Size:153K sanyo
2sc4489.pdf 
Ordering number EN3096 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1709/2SC4489 High-Voltage Switching Applications Features Package Dimensions Adoption of FBET, MBIT processes. unit mm High breakdown voltage, large current capacity. 2064 Fast switching speed. [2SA1709/2SC4489] E Emitter C Collector B Base ( ) 2SA1709 SANYO NMP Specifications Absolute Ma
8.3. Size:68K sanyo
2sa1708 2sc4488.pdf 
Ordering number EN3094A 2SA1708 / 2SC4488 SANYO Semiconductors DATA SHEET PNP / NPN Epitaxial Planar Silicon Transistors 2SA1708 / 2SC4488 High-Voltage Switching Applications Features Adoption of FBET, MBIT processes. High breakdown voltage, large current capacity. Fast switching speed. Specifications ( ) 2SA1708 Absolute Maximum Ratings at Ta=25 C Parameter Symbol
8.4. Size:153K sanyo
2sc4488.pdf 
Ordering number EN3094 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1708/2SC4488 High-Voltage Switching Applications Features Package Dimensions Adoption of FBET, MBIT processes. unit mm High breakdown voltage, large current capacity. 2064 Fast switching speed. [2SA1708/2SC4488] E Emitter C Collector B Base ( ) 2SA1708 SANYO NMP Specifications Absolute
8.5. Size:35K sanyo
2sc4482.pdf 
Ordering number ENN3235 NPN Epitaxial Planar Silicon Transistor 2SC4482 High-Current Switching Applications Features Package Dimensions Low saturation voltage. unit mm Large current capacity. 2064A High-speed switching. [2SC4482] 2.5 1.45 6.9 1.0 0.6 0.9 0.5 1 2 3 0.45 1 Emitter 2 Collector 3 Base 2.54 2.54 SANYO NMP Specifications Absolute Maximum Ra
8.6. Size:139K sanyo
2sc4486.pdf 
Ordering number EN3026 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1706/2SC4486 High-Current Switching Applications Applications Package Dimensions Voltage regulators, relay drivers, lamp drivers. unit mm 2064 Features [2SA1706/2SC4486] Adoption of FBET, MBIT processes. Large current capacity and wide ASO. Fast switching speed. E Emitter C Collector B Base
8.7. Size:134K sanyo
2sc4484.pdf 
Ordering number EN3024 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1704/2SC4484 High-Current Driver Applications Applications Package Dimensions Voltage regulators, relay drivers. lamp drivers. unit mm 2064 Features [2SA1704/2SC4484] Adoption of FBET, MBIT processes. Low collector-to-emitter voltage. Large current capacity and wide ASO. Fast switching speed.
8.8. Size:61K sanyo
2sa1707 2sc4487.pdf 
Ordering number ENN3093 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1707/2SC4487 High-Current Switching Applications Features Package Dimensions Adoption of FBET, MBIT processes. unit mm Large current capacity, wide ASO. 2064A Low collector-to-emitter saturation voltage. [2SA1707/2SC4487] Fast switching speed. 2.5 1.45 6.9 1.0 0.6 0.9 0.5 1 2 3 0.45 1 Em
8.9. Size:154K sanyo
2sc4487.pdf 
Ordering number EN3093 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1707/2SC4487 High-Current Switching Applications Features Package Dimensions Adoption of FBET, MBIT processes. unit mm Large current capacity, wide ASO. 2064 Low collector-to-emitter saturation voltage. [2SA1707/2SC4487] Fast switching speed. E Emitter C Collector B Base ( ) 2SA1707 SA
8.10. Size:99K sanyo
2sc4480.pdf 
Ordering number EN3234 NPN Epitaxial Planar Silicon Transistor 2SC4480 Low-Frequency General-Purpose Amplifier, General Driver Applications Features Package Dimensions Large current capacity. unit mm Adoption of MBIT process. 2064A High DC current gain. [2SC4480] 2.5 Low collector-to-emitter saturation voltage. 1.45 High VEBO. 6.9 1.0 0.6 0.9 0.5 1 2 3 0.
8.11. Size:125K sanyo
2sa1703 2sc4483.pdf 
Ordering number EN3023 PNP/NPN Epitaxial Planar Silicon Transistor 2SA1703/2SC4483 Low-Frequency Amplifier, Electronic Governor Applications Features Package Dimensions Low collector-to-emitter saturation voltage. unit mm 2064 [2SA1703/2SC4483] E Emitter C Collector B Base ( ) 2SA1703 SANYO NMP Specifications Absolute Maximum Ratings at Ta = 25 C Parameter Symbol
8.12. Size:143K sanyo
2sa1701 2sc4481.pdf 
Ordering number EN3022 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1701/2SC4481 Low-Frequency General-Purpose Amplifier Applications Applications Package Dimensions AF power amplifier, medium-speed switching, small- unit mm sized motor driver applications. 2064 [2SA1701/2SC4481] Features Large current capacity. Low collector-to-emitter saturation voltage. E Emitt
8.13. Size:556K onsemi
2sa1708s-an 2sa1708t-an 2sc4488s-an 2sc4488t-an.pdf 
Ordering number EN3094B 2SA1708/2SC4488 Bipolar Transistor http //onsemi.com ( ) ( ) ( ) ( ) - 100V, - 1A, Low VCE sat , PNP NPN Single NMP Features Adoption of FBET, MBIT processes High breakdown voltage, large current capacity Fast switching speed ( )2SA1708 Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Collector-to-Ba
8.14. Size:519K onsemi
2sc4482t-an 2sc4482u-an.pdf 
Ordering number EN3235A 2SC4482 Bipolar Transistor http //onsemi.com ( ) 20V, 5A, Low VCE sat , NPN Single NMP Features Low saturation voltage Large current capacity High-speed switching Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 60 V Collector-to-Emitter Voltage VCEO 20 V Emitter-to-Ba
8.15. Size:545K onsemi
2sa1707s-an 2sa1707t-an 2sc4487s-an 2sc4487t-an.pdf 
Ordering number EN3093A 2SA1707/2SC4487 Bipolar Transistor http //onsemi.com (-)50V, (-)3A, Low VCE(sat), (PNP)NPN Single NMP Features Adoption of FBET, MBIT processes Large current capacity, wide ASO Low collector-to-emitter saturation voltage Fast switching speed ( )2SA1707 Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings
8.16. Size:545K onsemi
2sa1709s-an 2sa1709t-an 2sc4489s-an 2sc4489t-an.pdf 
Ordering number EN3096A 2SA1709/2SC4489 Bipolar Transistor http //onsemi.com (-)100V, (-)2A, Low VCE(sat), (PNP)NPN Single NMP Features Adoption of FBET, MBIT processes High breakdown voltage, large current capacity Fast switching speed ( )2SA1709 Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VC
Другие транзисторы: 2SC4478, 2SC4479, 2SC448, 2SC4480, 2SC4481, 2SC4482, 2SC4483, 2SC4484, BC327, 2SC4486, 2SC4487, 2SC4488, 2SC4489, 2SC449, 2SC4490, 2SC4491, 2SC4492
