2SC4497 TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process) 2SC4497 High Voltage Control Applications Unit: mm High voltage: VCBO = 300 V, VCEO = 300 V Low saturation voltage: V = 0.5 V (max) CE (sat) Small collector output capacitance: C = 3 pF (typ.) ob Complementary to 2SA1721 Maximum Ratings (Ta == 25C) ==Characteristics Symbol Ra

Ordering number:EN3097PNP/NPN Epitaxial Planar Silicon Transistors2SA1710/2SC4490High-Definition CRT DisplayVideo Output ApplicationsFeatures Package Dimensions High breakdown voltage (VCEO 300V).unit:mm Excellent high frequency characteristic.2064 Adoption of MBIT process.[2SA1710/2SC4490]E : EmitterC : CollectorB : Base( ) : 2SA1710SANYO : NMPSpec

Ordering number:EN3099NPN Triple Diffused Planar Silicon Transistor2SC4493High-Voltage Amplifier,High-Voltage Switching ApplicationsFeatures Package Dimensions High breakdown voltage.unit:mm Small Cob.2049C High reliability (Adoption of HVP process).[2SC4493] Intended for high-density mounting (Suitable for sets10.24.51.3whose height is restricted).

Ordering number:EN3036NPN Epitaxial Planar Silicon Transistor2SC4491L Load (Various Drivers)Switching ApplicationsApplications Package Dimensions Suitable for use in switching of L load (motorunit:mmdrivers, printer hammer drivers, relay drivers).2064A[2SC4491]2.51.45Features6.9 1.0 Darlington connection. On-chip Zener diode of 60 10V between collector

2SC4499(L)/(S)Silicon NPN Triple DiffusedApplicationHigh speed and high voltage switchingOutlineDPAK44121. Base3 2. Collector3. EmitterS Type 124. Collector3L Type2SC4499(L)/(S)Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 500 VCollector to emitter voltage VCEO 400 VEmitter to base voltage VEBO 10 VCo

High hFELOW VCE (sat) 2SC4495Silicon NPN Triple Diffused Planar Transistor Application : Audio Temperature Compensation and General Purpose Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) External Dimensions FM20(TO220F)Symbol 2SC4495 Symbol Conditions 2SC4495 UnitUnit0.24.20.210.1c0.52.8VCBO 80 ICBO VCB=80V 10max AVVCEO 50 IEBO VEB

SMD Type TransistorsNPN Transistors2SC4497SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13 Features Collector Current Capability IC=100mA Collector Emitter Voltage VCEO=300V1 2+0.10.95-0.1 Complement to 2SA1721 0.1+0.05-0.011.9+0.1-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - B

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4495DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 50V(Min)(BR)CEOHigh DC Current Gain-: h = 500(Min)@I = 0.5AFE CFast switching speedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAudio temperature compensation and general purposeABSOLUTE MAXI