High hFELOW VCE (sat) 2SC4495Silicon NPN Triple Diffused Planar Transistor Application : Audio Temperature Compensation and General Purpose Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) External Dimensions FM20(TO220F)Symbol 2SC4495 Symbol Conditions 2SC4495 UnitUnit0.24.20.210.1c0.52.8VCBO 80 ICBO VCB=80V 10max AVVCEO 50 IEBO VEB

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4495DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 50V(Min)(BR)CEOHigh DC Current Gain-: h = 500(Min)@I = 0.5AFE CFast switching speedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAudio temperature compensation and general purposeABSOLUTE MAXI

2SC4497 TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process) 2SC4497 High Voltage Control Applications Unit: mm High voltage: VCBO = 300 V, VCEO = 300 V Low saturation voltage: V = 0.5 V (max) CE (sat) Small collector output capacitance: C = 3 pF (typ.) ob Complementary to 2SA1721 Maximum Ratings (Ta == 25C) ==Characteristics Symbol Ra

Ordering number:EN3097PNP/NPN Epitaxial Planar Silicon Transistors2SA1710/2SC4490High-Definition CRT DisplayVideo Output ApplicationsFeatures Package Dimensions High breakdown voltage (VCEO 300V).unit:mm Excellent high frequency characteristic.2064 Adoption of MBIT process.[2SA1710/2SC4490]E : EmitterC : CollectorB : Base( ) : 2SA1710SANYO : NMPSpec

Ordering number:EN3099NPN Triple Diffused Planar Silicon Transistor2SC4493High-Voltage Amplifier,High-Voltage Switching ApplicationsFeatures Package Dimensions High breakdown voltage.unit:mm Small Cob.2049C High reliability (Adoption of HVP process).[2SC4493] Intended for high-density mounting (Suitable for sets10.24.51.3whose height is restricted).

Ordering number:EN3036NPN Epitaxial Planar Silicon Transistor2SC4491L Load (Various Drivers)Switching ApplicationsApplications Package Dimensions Suitable for use in switching of L load (motorunit:mmdrivers, printer hammer drivers, relay drivers).2064A[2SC4491]2.51.45Features6.9 1.0 Darlington connection. On-chip Zener diode of 60 10V between collector

2SC4499(L)/(S)Silicon NPN Triple DiffusedApplicationHigh speed and high voltage switchingOutlineDPAK44121. Base3 2. Collector3. EmitterS Type 124. Collector3L Type2SC4499(L)/(S)Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 500 VCollector to emitter voltage VCEO 400 VEmitter to base voltage VEBO 10 VCo

SMD Type TransistorsNPN Transistors2SC4497SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13 Features Collector Current Capability IC=100mA Collector Emitter Voltage VCEO=300V1 2+0.10.95-0.1 Complement to 2SA1721 0.1+0.05-0.011.9+0.1-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - B