Биполярный транзистор 2SC4502 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SC4502
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 1 W
Макcимально допустимое напряжение коллектор-база (Ucb): 50 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 45 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 4 V
Макcимальный постоянный ток коллектора (Ic): 0.05 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 300 MHz
Статический коэффициент передачи тока (hfe): 20
Корпус транзистора: MT2
2SC4502 Datasheet (PDF)
2sc4502.pdf
Transistor2SC4502Silicon NPN epitaxial planer typeFor mtermediate frequency amplificationUnit: mm2.5 0.11.056.9 0.1 0.05 (1.45)0.7 4.0 0.8FeaturesHigh transition frequency fT.Large collector power dissipation PC. 0.65 max.Allowing supply with the radial taping.+0.1 Absolute Maximum Ratings (Ta=25C)0.450.052.5 0.5 2.5 0.5Parameter Symbol Rating
2sc4502 e.pdf
Transistor2SC4502Silicon NPN epitaxial planer typeFor mtermediate frequency amplificationUnit: mm2.5 0.11.056.9 0.1 0.05 (1.45)0.7 4.0 0.8FeaturesHigh transition frequency fT.Large collector power dissipation PC. 0.65 max.Allowing supply with the radial taping.+0.1 Absolute Maximum Ratings (Ta=25C)0.450.052.5 0.5 2.5 0.5Parameter Symbol Rating
2sc4504.pdf
Ordering number:EN3160ANPN Epitaxial Planar Silicon Transistor2SC4504High-Definition CRT DisplayVideo Output Driver ApplicationsFeatures Package Dimensions High fT (fT=2.2GHz typ)unit:mm Large current (IC=300mA)2038A Adoption of FBET process.[2SC4504]4.51.51.60.4 0.53 2 10.41.53.01 : Base2 : Collector0.753 : EmitterSANYO : PCP(Bottom vi
2sa1759 2sc4505 2sc4620.pdf
2SA1759TransistorsTransistors2SC4505 / 2SC4620(96-97-A324)(96-178-C300)305
2sc4501.pdf
2SC4501(L)/(S)Silicon NPN EpitaxialApplicationHigh gain amplifier and medium speed switchingOutlineDPAK42, 441121. Base 3 2. Collector 3. Emitter S Type 124. Collector33L Type2SC4501(L)/(S)Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 30 VCollector to emitter voltage VCEO 30 VEmitter to base volta
2sc4500.pdf
2SC4500(L)/(S)Silicon NPN EpitaxialApplicationLow frequency amplifierOutlineDPAK42, 441121. Base3 2. Collector3. EmitterS Type 124. Collector33L Type2SC4500(L)/(S)Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 60 VCollector to emitter voltage VCEO 60 VEmitter to base voltage VEBO 7VCollector curr
2sc4508.pdf
JMnic Product SpecificationSilicon NPN Power Transistors 2SC4508 DESCRIPTION With TO-220F package High breakdown voltage High speed switching performance APPLICATIONS For switching regulator and general purpose power amplifier applications PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-220F) and symbol3 EmitterAbsolute maximum rating
2sc4509.pdf
JMnic Silicon NPN Power Transistors 2SC4509 DESCRIPTION With TO-3PML package High voltage ,high speed switching Low collector saturation voltage APPLICATIONS Switching regulators DC-DC convertors Solid state relay General purpose power amplifiers PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-3PML) and symbol 3 EmitterAbsolu
2sc4507.pdf
JMnic Product SpecificationSilicon NPN Power Transistors 2SC4507 DESCRIPTION With TO-220F package High breakdown voltage High speed switching performance APPLICATIONS For switching regulator and general purpose power amplifier applications PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-220F) and symbol3 EmitterAbsolute maximum rating
2sc4505.pdf
SMD Type TransistorsNPN Transistors2SC4505SOT-89Unit:mm1.70 0.1 Features Collector Current Capability IC=0.1A Collector Emitter Voltage VCEO=400V0.42 0.10.46 0.1 Complements to 2SA17591.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 400 Collector - Emitter Voltage VCEO 4
2sc4504.pdf
SMD Type TransistorsNPN Transistors2SC4504SOT-89Unit:mm1.70 0.1 Features Collector Current Capability IC=0.3A Collector Emitter Voltage VCEO=20V0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Collector - Emitter Voltage VCEO 20 V Emitter - Base Voltage VE
2sc4508.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4508DESCRIPTIONFast switching speedSilicon NPN planar diffused planar transistor100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAudio temperature compensation and general purposeABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNI
2sc4509.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4509DESCRIPTIONHigh Collector-Emitter Sustaining Voltage-: V = 400V(Min.)CEO(SUS)High Switching SpeedHigh ReliabilityLow Collector Saturation Voltage100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsDC-DC conver
2sc4507.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4507DESCRIPTIONFast switching speedSilicon NPN planar diffused planar transistor100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAudio temperature compensation and general purposeABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNI
Другие транзисторы... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050