Биполярный транзистор 2SC4524 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SC4524
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 7 W
Макcимально допустимое напряжение коллектор-база (Ucb): 50 V
Макcимальный постоянный ток коллектора (Ic): 2.5 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 1600 MHz
Статический коэффициент передачи тока (hfe): 70
Корпус транзистора: U29-1
2SC4524 Datasheet (PDF)
2sc4527.pdf
2SC4527 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4527 TV Tuner, UHF Oscillator Applications (common base) Unit: mm TV Tuner, UHF Converter Applications (common base) Transition frequency is high and dependent on current excellently. Exchange of emitter for base in 2SC4246. Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollect
2sc4523.pdf
Ordering number:EN3142ANPN Epitaxial Planar Silicon Transistors2SC4523High-Speed Switching ApplicationsFeatures Package Dimensions Adoption of FBET, MBIT process.unit:mm Large current capacity.2045B Low collector-to-emitter saturation voltage.[2SC4522] Fast switching speed.6.52.35.00.540.850.71.21 : Base0.60.52 : Collector3 : Emitter
2sc4522.pdf
Ordering number:EN3141ANPN Epitaxial Planar Silicon Transistors2SC4522High-Speed Switching ApplicationsFeatures Package Dimensions Adoption of FBET, MBIT process.unit:mm Large current capacity.2045B Low collector-to-emitter saturation voltage.[2SC4522] Fast switching speed.6.52.35.00.540.850.71.21 : Base0.60.52 : Collector3 : Emitter
2sc4521.pdf
Ordering number:EN3140ANPN Epitaxial Planar Silicon Transistors2SC4521High-Speed Switching ApplicationsFeatures Package Dimensions Adoption of FBET, MBIT process.unit:mm Large current capacity.2038A Low collector-to-emitter saturation voltage.[2SC4521] Fast switching speed.4.51.5 Small-sized package. 1.60.4 0.53 2 10.41.53.01 : Base0.75
2sc4520.pdf
Ordering number:EN3139NPN Epitaxial Planar Silicon Transistors2SC4520High-Speed Switching ApplicationsFeatures Package Dimensions Adoption of FBET, MBIT process.unit:mm Large current capacity.2038A Low collector-to-emitter saturation voltage.[2SC4520] Fast switching speed.4.51.5 Small-sized package. 1.60.4 0.53 2 10.41.53.01 : Base0.752
2sc4529.pdf
2SC4529Silicon NPN EpitaxialVHF Wide Band AmplifierAbsolute Maximum Ratings (Ta = 25C)TO-126 MODItem Symbol Rating UnitCollector to base voltage VCBO 30 VCollector to emitter voltage VCEO 20 V
2sc4521.pdf
SMD Type TransistorsNPN Transistors2SC4521SOT-89Unit:mm1.70 0.1 Features Collector Current Capability IC=3A Collector Emitter Voltage VCEO=45V0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector - Emitter Voltage VCEO 45 V Emitter - Base Voltage VEBO
Другие транзисторы... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
