Справочник транзисторов. 2SC4524

 

Биполярный транзистор 2SC4524 - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: 2SC4524
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 7 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 50 V
   Макcимальный постоянный ток коллектора (Ic): 2.5 A
   Предельная температура PN-перехода (Tj): 150 °C
   Граничная частота коэффициента передачи тока (ft): 1600 MHz
   Статический коэффициент передачи тока (hfe): 70
   Корпус транзистора: U29-1

 Аналоги (замена) для 2SC4524

 

 

2SC4524 Datasheet (PDF)

 8.1. Size:309K  toshiba
2sc4527.pdf

2SC4524 2SC4524

2SC4527 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4527 TV Tuner, UHF Oscillator Applications (common base) Unit: mm TV Tuner, UHF Converter Applications (common base) Transition frequency is high and dependent on current excellently. Exchange of emitter for base in 2SC4246. Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollect

 8.2. Size:90K  sanyo
2sc4523.pdf

2SC4524 2SC4524

Ordering number:EN3142ANPN Epitaxial Planar Silicon Transistors2SC4523High-Speed Switching ApplicationsFeatures Package Dimensions Adoption of FBET, MBIT process.unit:mm Large current capacity.2045B Low collector-to-emitter saturation voltage.[2SC4522] Fast switching speed.6.52.35.00.540.850.71.21 : Base0.60.52 : Collector3 : Emitter

 8.3. Size:90K  sanyo
2sc4522.pdf

2SC4524 2SC4524

Ordering number:EN3141ANPN Epitaxial Planar Silicon Transistors2SC4522High-Speed Switching ApplicationsFeatures Package Dimensions Adoption of FBET, MBIT process.unit:mm Large current capacity.2045B Low collector-to-emitter saturation voltage.[2SC4522] Fast switching speed.6.52.35.00.540.850.71.21 : Base0.60.52 : Collector3 : Emitter

 8.4. Size:87K  sanyo
2sc4521.pdf

2SC4524 2SC4524

Ordering number:EN3140ANPN Epitaxial Planar Silicon Transistors2SC4521High-Speed Switching ApplicationsFeatures Package Dimensions Adoption of FBET, MBIT process.unit:mm Large current capacity.2038A Low collector-to-emitter saturation voltage.[2SC4521] Fast switching speed.4.51.5 Small-sized package. 1.60.4 0.53 2 10.41.53.01 : Base0.75

 8.5. Size:93K  sanyo
2sc4520.pdf

2SC4524 2SC4524

Ordering number:EN3139NPN Epitaxial Planar Silicon Transistors2SC4520High-Speed Switching ApplicationsFeatures Package Dimensions Adoption of FBET, MBIT process.unit:mm Large current capacity.2038A Low collector-to-emitter saturation voltage.[2SC4520] Fast switching speed.4.51.5 Small-sized package. 1.60.4 0.53 2 10.41.53.01 : Base0.752

 8.6. Size:280K  hitachi
2sc4529.pdf

2SC4524 2SC4524

2SC4529Silicon NPN EpitaxialVHF Wide Band AmplifierAbsolute Maximum Ratings (Ta = 25C)TO-126 MODItem Symbol Rating UnitCollector to base voltage VCBO 30 VCollector to emitter voltage VCEO 20 V

 8.7. Size:1159K  kexin
2sc4521.pdf

2SC4524 2SC4524

SMD Type TransistorsNPN Transistors2SC4521SOT-89Unit:mm1.70 0.1 Features Collector Current Capability IC=3A Collector Emitter Voltage VCEO=45V0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector - Emitter Voltage VCEO 45 V Emitter - Base Voltage VEBO

Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 2SC945 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
Back to Top