Справочник транзисторов. 2SC4553

 

Биполярный транзистор 2SC4553 - описание производителя. Основные параметры. Даташиты.

Наименование производителя: 2SC4553

Тип материала: Si

Полярность: NPN

Максимальная рассеиваемая мощность (Pc): 30 W

Макcимально допустимое напряжение коллектор-база (Ucb): 100 V

Макcимальный постоянный ток коллектора (Ic): 7.5 A

Предельная температура PN-перехода (Tj): 175 °C

Граничная частота коэффициента передачи тока (ft): 100 MHz

Статический коэффициент передачи тока (hfe): 160

Корпус транзистора: TO220

Аналоги (замена) для 2SC4553

 

 

2SC4553 Datasheet (PDF)

1.1. 2sc4553.pdf Size:126K _nec

2SC4553
2SC4553

DATA SHEET SILICON POWER TRANSISTOR 2SC4553 NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SC4553 is a power transistor designed especially for low PACKAGE DRAWING (UNIT: mm) collector saturation voltage and features large current switching at a low power dissipation. In addition, a high hFE enables alleviation of the driver load. FEATURES High hFE and low VCE(sat): hF

4.1. 2sc4555.pdf Size:124K _sanyo

2SC4553
2SC4553

Ordering number:EN3187 PNP/NPN Epitaxial Planar Silicon Transistor 2SA1745/2SC4555 Low-Frequency General-Purpose Amplifier Applications Features Package Dimensions Very small-sized package permitting the 2SA1745/ unit:mm 2SC4555-applied set to be made small and slim. 2059 Low collector-to-emitter saturation voltage. [2SA1745/2SC4555] B : Base C : Collector E : Emitter ( ) : 2S

4.2. 2sc4554.pdf Size:111K _nec

2SC4553
2SC4553

DATA SHEET SILICON POWER TRANSISTOR 2SC4554 NPN SILICON EPITAXIAL TRANSISTOR FOR SWITCHING The 2SC4554 is a power transistor designed especially for low PACKAGE DRAWING (UNIT: mm) collector saturation voltage and features large current switching at a low power dissipation. In addition, a high hFE enables alleviation of the driver load. FEATURES High hFE and low VCE(sat): hFE ? 800 (VC

 4.3. 2sc4552.pdf Size:161K _nec

2SC4553
2SC4553

DATA SHEET SILICON POWER TRANSISTOR 2SC4552 NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SC4552 is a power transistor developed for high-speed PACKAGE DRAWING (UNIT: mm) switching and features low VCE(sat) and high hFE. This transistor is ideal for use in drivers such as DC/DC converters and actuators. In addition, a small resin-molded insulation type package contributes

4.4. 2sc4550.pdf Size:135K _nec

2SC4553
2SC4553

DATA SHEET SILICON POWER TRANSISTOR 2SC4550 NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SC4550 is a power transistor developed for high-speed PACKAGE DRAWING (UNIT: mm) switching and features low VCE(sat) and high hFE. This transistor is ideal for use in drivers such as DC/DC converters and actuators. In addition, a small resin-molded insulation type package contributes

 4.5. 2sc4551.pdf Size:140K _nec

2SC4553
2SC4553

DATA SHEET SILICON POWER TRANSISTOR 2SC4551 NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SC4551 is a power transistor developed for high-speed PACKAGE DRAWING (UNIT: mm) switching and features low VCE(sat) and high hFE. This transistor is ideal for use in drivers such as DC/DC converters and actuators. In addition, a small resin-molded insulation type package contributes

4.6. 2sc4559.pdf Size:59K _panasonic

2SC4553
2SC4553

Power Transistors 2SC4559 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm 10.0 0.2 4.2 0.2 5.5 0.2 2.7 0.2 Features High collector to emitter VCEO ? 3.1 0.1 High-speed switching Full-pack package which can be installed to the heat sink with one screw 1.3 0.2 1.4 0.1 Absolute Maximum Ratings (TC=25?C) +0.2 0.5 0.1 Parameter

4.7. 2sc4554.pdf Size:86K _no

2SC4553
2SC4553

4.8. 2sc4557.pdf Size:25K _sanken-ele

2SC4553

2SC4557 Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor) Application : Switching Regulator and General Purpose External Dimensions FM100(TO3PF) Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) Symbol 2SC4557 Symbol Conditions 2SC4557 Unit Unit 0.2 0.2 5.5 15.6 0.2 3.45 VCBO 900 ICBO VCB=800V 100max A V VCEO 550 IEBO VEB=7V

4.9. 2sc4552.pdf Size:176K _inchange_semiconductor

2SC4553
2SC4553

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4552 DESCRIPTION ·With TO-220F package ·High hFE and low VCE(sat) APPLICATIONS ·For high-speed switching ·For use in drivers such as DC-DC converters and actuators. PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220F) and symbol 3 Emitter Absolute maximum ratings (Ta

4.10. 2sc4550.pdf Size:242K _inchange_semiconductor

2SC4553
2SC4553

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC4550 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 60V(Min) ·High DC Current Gain- : hFE= 100(Min)@ (VCE= 2V , IC= 1.5A) ·Low Saturation Voltage- : VCE(sat)= 0.3V(Max)@ (IC= 4A, IBB= 0.2A) APPLICATIONS ·Designed for use as a driver in DC/DC converters and actuators. AB

4.11. 2sc4559.pdf Size:99K _inchange_semiconductor

2SC4553
2SC4553

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4559 DESCRIPTION · ·With TO-220Fa package ·High speed switching ·High VCEO APPLICATIONS ·For high breakdown voltage ,high-speed switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220Fa) and symbol 3 Emitter Absolute maximum ratings (Ta=25?) SYMBO

4.12. 2sc4557.pdf Size:120K _inchange_semiconductor

2SC4553
2SC4553

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4557 DESCRIPTION ·With TO-3PML package ·High voltage switchihg transistor APPLICATIONS ·For switching regulator and general purpose applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-3PML) and symbol 3 Emitter Absolute maximum ratings(Ta=25?) SYMBOL PARAMETE

4.13. 2sc4555.pdf Size:1328K _kexin

2SC4553
2SC4553

SMD Type Transistors NPN Transistors 2SC4555 ■ Features ● Low collector-to-emitter saturation voltage. ● Complementary to 2SA1745 1 Base 2 Emitter 3 Collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Collector - Emitter Voltage VCEO 15 V Emitter - Base Voltage VEBO 5 Collector Current - Continuous IC 500 mA

Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 9012 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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