Биполярный транзистор 2SC4562 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SC4562
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 0.3 W
Макcимально допустимое напряжение коллектор-база (Ucb): 50 V
Макcимальный постоянный ток коллектора (Ic): 0.05 A
Предельная температура PN-перехода (Tj): 175 °C
Граничная частота коэффициента передачи тока (ft): 100 MHz
Статический коэффициент передачи тока (hfe): 70
Корпус транзистора: TO236
2SC4562 Datasheet (PDF)
2sc4562 e.pdf
Transistor2SC4562Silicon NPN epitaxial planer typeFor high-frequency amplificationUnit: mmComplementary to 2SA17482.1 0.10.425 1.25 0.1 0.425FeaturesHigh transition frequency fT. 1Small collector output capacitance Cob.S-Mini type package, allowing downsizing of the equipment and3automatic insertion through the tape packing and the magazine2packing.Absolute
2sc4562.pdf
Transistor2SC4562Silicon NPN epitaxial planer typeFor high-frequency amplificationUnit: mmComplementary to 2SA17482.1 0.10.425 1.25 0.1 0.425FeaturesHigh transition frequency fT. 1Small collector output capacitance Cob.S-Mini type package, allowing downsizing of the equipment and3automatic insertion through the tape packing and the magazine2packing.Absolute
2sc4562.pdf
SMD Type TransistorsNPN Transistors2SC4562 Features High transition frequency fT. Small collector output capacitance Cob. Complementary to 2SA17481 Base2 Emitter3 Collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 50 Collector - Emitter Voltage VCEO 50 V Emitter - Base Voltage VEBO 5 Collector C
2sa1749 2sc4564.pdf
Ordering number:EN3643PNP/NPN Epitaxial Planar Silicon Transistors2SA1749/2SC4564High-Definition CRT DisplayVideo Output ApplicationsFeatures Package Dimensions High fT : fT=400MHz (typ).unit:mm High breakdown voltage : VCEO 200V min.2042A High current.[2SA1749/2SC4564] Small reverse transfer capacitance and excellent highfrequnecy chacateristics :Cre=
2sc4563.pdf
Ordering number:EN4728PNP Epitaxial Planar Silicon Transistor2SC4563Ultrahigh-Definition CRT DisplayVideo Output ApplicationsFeatures Package Dimensions High fT : fT=1.2GHz typ.unit:mm High breakdown voltage : VCEO 80V.2010C High current : IC=500mA.[2SC4411] Small reverse transfer capacitance : Cre=3.8pF10.24.53.65.1(VCB=30V). 1.3 Adoption o
2sc4568.pdf
DATA SHEETDATA SHEETSILICON TRANSISTOR2SC4568NPN SILICON EPITAXIAL TRANSISTORUHF TV TUNER OSC/MIXERDESCRIPTIONPACKAGE DIMENSIONSThe 2SC4568 is an NPN silicon epitaxial transistor intended for use as(Units: mm)UHF oscillator and UHF mixer in a tuner of TV receiver.2.80.21.50.65+0.1-0.15FEATURES High gain bandwidth productfT = 5.5 GHz TYP.2 Low output
2sc4569.pdf
DATA SHEETDATA SHEETSILICON TRANSISTOR2SC4569UHF TV TUNER OSC/MIXERNPN SILICON EPITAXIAL TRANSISTORDESCRIPTIONPACKAGE DIMENSIONSThe 2SC4569 is an NPN silicon epitaxial transistro intended for use as(Units: mm)UHF oscillator and UHF mixer in a tuner of TV receiver.2.80.21.50.65+0.1-0.15FEATURES High gain bandwidty productfT = 5.0 GHz TYP.2 Low output
2sc4568.pdf
SMD Type TransistorsNPN Transistors2SC4568SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13 Features Collector Current Capability IC=30mA1 2 Collector Emitter Voltage VCEO=12V+0.050.95+0.1-0.1 0.1 -0.011.9+0.1-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Collect
2sc4569.pdf
SMD Type TransistorsNPN Transistors2SC4569SOT-23Unit: mm+0.12.9 -0.10.4+0.1-0.13 Features Collector Current Capability IC=60mA1 2 Collector Emitter Voltage VCEO=12V+0.1+0.050.95 -0.1 0.1-0.01+0.11.9-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Collect
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