Биполярный транзистор 2SC458B - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SC458B
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 0.2 W
Макcимально допустимое напряжение коллектор-база (Ucb): 30 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 30 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 0.1 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 230(typ) MHz
Ёмкость коллекторного перехода (Cc): 1.8 pf
Статический коэффициент передачи тока (hfe): 100
Корпус транзистора: TO92
2SC458B Datasheet (PDF)
2sc2310 2sc458.pdf
2SC458 (LG), 2SC2310Silicon NPN EpitaxialApplication Low frequency low noise amplifier Complementary pair with 2SA1031 and 2SA1032OutlineTO-92 (1)1. Emitter2. Collector3. Base3212SC458 (LG), 2SC2310Absolute Maximum Ratings (Ta = 25C)Item Symbol 2SC458 (LG) 2SC2310 UnitCollector to base voltage VCBO 30 55 VCollector to emitter voltage VCEO 30 50 VEmit
2sc458 2sc2308.pdf
2SC458, 2SC2308Silicon NPN EpitaxialApplication Low frequency amplifier Complementary pair with 2SA1029 and 2SA1030OutlineTO-92 (1)1. Emitter2. Collector3. Base3212SC458, 2SC2308Absolute Maximum Ratings (Ta = 25C)Item Symbol 2SC458 2SC2308 UnitCollector to base voltage VCBO 30 55 VCollector to emitter voltage VCEO 30 50 VEmitter to base voltage VEBO
2sc4580.pdf
SHINDENGENSwitching Power TransistorFX SeriesOUTLINE DIMENSIONS2SC4580 Case : ITO-3P Unit : mm(TP8W45FX)8A NPNRATINGSAbsolute Maximum Ratings Item Symbol Conditions Ratings UnitStorage Temperature Tstg -55150 Junction Temperature Tj 150 Collector to Base Voltage VCBO 600 VCollector to Emitter Voltage VCEO 450 VVCEX VEB = 5V 600Emitter to Base Voltage
2sc4583.pdf
SHINDENGENSwitching Power TransistorHFX SeriesOUTLINE DIMENSIONS2SC4583 Case : ITO-3P Unit : mm(TP3W80HFX)3A NPNRATINGSAbsolute Maximum Ratings Item Symbol Conditions Ratings UnitStorage Temperature Tstg -55150 Junction Temperature Tj 150 Collector to Base Voltage VCBO 1200 VCollector to Emitter Voltage VCEO 800 VEmitter to Base Voltage VEBO 7VCollect
2sc4581.pdf
SHINDENGENSwitching Power TransistorFX SeriesOUTLINE DIMENSIONS2SC4581 Case : ITO-3P Unit : mm(TP10W45FX)10A NPNRATINGSAbsolute Maximum Ratings Item Symbol Conditions Ratings UnitStorage Temperature Tstg -55150 Junction Temperature Tj 150 Collector to Base Voltage VCBO 600 VCollector to Emitter Voltage VCEO 450 VVCEX VEB = 5V 600Emitter to Base Voltag
2sc4582.pdf
SHINDENGENSwitching Power TransistorFX SeriesOUTLINE DIMENSIONS2SC4582 Case : ITO-3P Unit : mm(TP15W45FX)15A NPNRATINGSAbsolute Maximum Ratings Item Symbol Conditions Ratings UnitStorage Temperature Tstg -55150 Junction Temperature Tj 150 Collector to Base Voltage VCBO 600 VCollector to Emitter Voltage VCEO 450 VVCEX VEB = 5V 600Emitter to Base Voltag
2sc4584.pdf
SHINDENGENSwitching Power TransistorHFX SeriesOUTLINE DIMENSIONS2SC4584 Case : ITO-3P Unit : mm(TP6W80HFX)6A NPNRATINGSAbsolute Maximum Ratings Item Symbol Conditions Ratings UnitStorage Temperature Tstg -55150 Junction Temperature Tj 150 Collector to Base Voltage VCBO 1200 VCollector to Emitter Voltage VCEO 800 VEmitter to Base Voltage VEBO 7VCollect
2sc4585.pdf
SHINDENGENSwitching Power TransistorHFX SeriesOUTLINE DIMENSIONS2SC4585 Case : ITO-3P Unit : mm(TP10W80HFX)10A NPNRATINGSAbsolute Maximum Ratings Item Symbol Conditions Ratings UnitStorage Temperature Tstg -55150 Junction Temperature Tj 150 Collector to Base Voltage VCBO 1200 VCollector to Emitter Voltage VCEO 800 VEmitter to Base Voltage VEBO 7VColle
2sc4580.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4580DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 450V(Min)CEO(SUS)Fast Switching speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power switching applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETE
2sc4583.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4583DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 800V(Min)CEO(SUS)Fast Switching speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power switching applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETE
2sc4589.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4589DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for CTV/character display horizontal deflectionoutput stage applicationsABSOLUTE MAXIMUM RATINGS(Ta=25
2sc4581.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4581DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 450V(Min)CEO(SUS)Fast Switching speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power switching applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETE
2sc4582.pdf
isc Silicon NPN Power Transistor 2SC4582DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 450V(Min)CEO(SUS)Fast Switching speedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power switching applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 600 VCBO
2sc4584.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4584 DESCRIPTION With TO-3PML package High voltage,high speed Switching power transistor PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-3PML) and symbol 3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-base voltag
2sc4585.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4585DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 800V(Min)CEO(SUS)Fast Switching speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power switching applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETE
Другие транзисторы... 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , 2N3055 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050