Биполярный транзистор 2SC458C - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SC458C
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 0.2 W
Макcимально допустимое напряжение коллектор-база (Ucb): 30 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 30 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 0.1 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 230(typ) MHz
Ёмкость коллекторного перехода (Cc): 1.8 pf
Статический коэффициент передачи тока (hfe): 160
Корпус транзистора: TO92
2SC458C Datasheet (PDF)
2sc2310 2sc458.pdf
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2SC458 (LG), 2SC2310Silicon NPN EpitaxialApplication Low frequency low noise amplifier Complementary pair with 2SA1031 and 2SA1032OutlineTO-92 (1)1. Emitter2. Collector3. Base3212SC458 (LG), 2SC2310Absolute Maximum Ratings (Ta = 25C)Item Symbol 2SC458 (LG) 2SC2310 UnitCollector to base voltage VCBO 30 55 VCollector to emitter voltage VCEO 30 50 VEmit
2sc458 2sc2308.pdf
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2SC458, 2SC2308Silicon NPN EpitaxialApplication Low frequency amplifier Complementary pair with 2SA1029 and 2SA1030OutlineTO-92 (1)1. Emitter2. Collector3. Base3212SC458, 2SC2308Absolute Maximum Ratings (Ta = 25C)Item Symbol 2SC458 2SC2308 UnitCollector to base voltage VCBO 30 55 VCollector to emitter voltage VCEO 30 50 VEmitter to base voltage VEBO
2sc4580.pdf
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SHINDENGENSwitching Power TransistorFX SeriesOUTLINE DIMENSIONS2SC4580 Case : ITO-3P Unit : mm(TP8W45FX)8A NPNRATINGSAbsolute Maximum Ratings Item Symbol Conditions Ratings UnitStorage Temperature Tstg -55150 Junction Temperature Tj 150 Collector to Base Voltage VCBO 600 VCollector to Emitter Voltage VCEO 450 VVCEX VEB = 5V 600Emitter to Base Voltage
2sc4583.pdf
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SHINDENGENSwitching Power TransistorHFX SeriesOUTLINE DIMENSIONS2SC4583 Case : ITO-3P Unit : mm(TP3W80HFX)3A NPNRATINGSAbsolute Maximum Ratings Item Symbol Conditions Ratings UnitStorage Temperature Tstg -55150 Junction Temperature Tj 150 Collector to Base Voltage VCBO 1200 VCollector to Emitter Voltage VCEO 800 VEmitter to Base Voltage VEBO 7VCollect
2sc4581.pdf
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SHINDENGENSwitching Power TransistorFX SeriesOUTLINE DIMENSIONS2SC4581 Case : ITO-3P Unit : mm(TP10W45FX)10A NPNRATINGSAbsolute Maximum Ratings Item Symbol Conditions Ratings UnitStorage Temperature Tstg -55150 Junction Temperature Tj 150 Collector to Base Voltage VCBO 600 VCollector to Emitter Voltage VCEO 450 VVCEX VEB = 5V 600Emitter to Base Voltag
2sc4582.pdf
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SHINDENGENSwitching Power TransistorFX SeriesOUTLINE DIMENSIONS2SC4582 Case : ITO-3P Unit : mm(TP15W45FX)15A NPNRATINGSAbsolute Maximum Ratings Item Symbol Conditions Ratings UnitStorage Temperature Tstg -55150 Junction Temperature Tj 150 Collector to Base Voltage VCBO 600 VCollector to Emitter Voltage VCEO 450 VVCEX VEB = 5V 600Emitter to Base Voltag
2sc4584.pdf
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SHINDENGENSwitching Power TransistorHFX SeriesOUTLINE DIMENSIONS2SC4584 Case : ITO-3P Unit : mm(TP6W80HFX)6A NPNRATINGSAbsolute Maximum Ratings Item Symbol Conditions Ratings UnitStorage Temperature Tstg -55150 Junction Temperature Tj 150 Collector to Base Voltage VCBO 1200 VCollector to Emitter Voltage VCEO 800 VEmitter to Base Voltage VEBO 7VCollect
2sc4585.pdf
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SHINDENGENSwitching Power TransistorHFX SeriesOUTLINE DIMENSIONS2SC4585 Case : ITO-3P Unit : mm(TP10W80HFX)10A NPNRATINGSAbsolute Maximum Ratings Item Symbol Conditions Ratings UnitStorage Temperature Tstg -55150 Junction Temperature Tj 150 Collector to Base Voltage VCBO 1200 VCollector to Emitter Voltage VCEO 800 VEmitter to Base Voltage VEBO 7VColle
2sc4580.pdf
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INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4580DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 450V(Min)CEO(SUS)Fast Switching speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power switching applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETE
2sc4583.pdf
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INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4583DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 800V(Min)CEO(SUS)Fast Switching speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power switching applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETE
2sc4589.pdf
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INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4589DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for CTV/character display horizontal deflectionoutput stage applicationsABSOLUTE MAXIMUM RATINGS(Ta=25
2sc4581.pdf
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INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4581DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 450V(Min)CEO(SUS)Fast Switching speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power switching applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETE
2sc4582.pdf
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isc Silicon NPN Power Transistor 2SC4582DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 450V(Min)CEO(SUS)Fast Switching speedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power switching applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 600 VCBO
2sc4584.pdf
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Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4584 DESCRIPTION With TO-3PML package High voltage,high speed Switching power transistor PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-3PML) and symbol 3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-base voltag
2sc4585.pdf
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INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4585DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 800V(Min)CEO(SUS)Fast Switching speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power switching applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETE
Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .