Биполярный транзистор 2SC4633 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SC4633
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 2 W
Макcимально допустимое напряжение коллектор-база (Ucb): 1500 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 1200 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 0.03 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 6 MHz
Ёмкость коллекторного перехода (Cc): 2 pf
Статический коэффициент передачи тока (hfe): 10
Корпус транзистора: TO220FI
2SC4633 Datasheet (PDF)
2sc4633.pdf
Ordering number:EN3702ANPN Triple Diffused Planar Silicon Transistor2SC46331200V/30mA High-Voltage Amplifier,High-Voltage Switching ApplicationsFeatures Package Dimensions High breakdown voltage (VCEO min=1200V).unit:mm Small Cob (typical Cob=2.0pF).2079B Full-isolation package.[2SC4633] High reliability (Adoption of HVP process).4.510.02.83.20.90
2sc4633ls.pdf
Ordering number : ENN3702B2SC4633LSNPN Triple Diffused Planar Silicon Transistor2SC4633LS1200V / 30mA High-Voltage Amplifier,High-Voltage Switching ApplicationsFeaturesPackage Dimensions High breakdown voltage(VCEO min=1200V).unit : mm Small Cob(typical Cob=2.0pF).2079D Full-isolation package.[2SC4633LS] High reliability(Adoption of HVP process).10.0 4.
2sc4630.pdf
Ordering number:EN3699ANPN Triple Diffused Planar Silicon Transistor2SC4630900V/100mA High-Voltage Amplifier,High-Voltage Switching ApplicationsFeatures Package Dimensions High breakdown voltage (VCEO min=900V).unit:mm Small Cob (typical Cob=2.8pF).2079B Full isolation package.[2SC4630] High reliability (Adoption of HVP process).4.510.02.83.20.90.
2sc4636.pdf
Ordering number:EN3705ANPN Triple Diffused Planar Silicon Transistor2SC46361800V/10mA High-Voltage Amplifier,High-Voltage Switching ApplicationsFeatures Package Dimensions High breakdown voltage (VCEO min=1800V).unit:mm Small Cob (typical Cob=1.4pF).2079B Full-isolation package.[2SC4636] High reliability (Adoption of HVP process).4.510.02.83.20.90
2sc4637.pdf
Ordering number:EN3706ANPN Triple Diffused Planar Silicon Transistor2SC46371800V/15mA High-Voltage Amplifier,High-Voltage Switching ApplicationsFeatures Package Dimensions High breakdown voltage (VCEO min=1800V).unit:mm Small Cob (typical Cob=1.8pF).2079B Full-isolation package.[2SC4637] High reliability (Adoption of HVP process).4.510.02.83.20.90
2sc4635.pdf
Ordering number:EN3704ANPN Triple Diffused Planar Silicon Transistor2SC46351500V/20mA High-Voltage Amplifier,High-Voltage Switching ApplicationsFeatures Package Dimensions High breakdown voltage (VCEO min=1500V).unit:mm Small Cob (typical Cob=1.9pF).2079B Full-isolation package.[2SC4635] High reliability (Adoption of HVP process).4.510.02.83.20.90
2sc4636ls.pdf
Ordering number : ENN3705B2SC4636LSNPN Triple Diffused Planar Silicon Transistor2SC4636LS1800V / 10mA High-Voltage Amplifier,High-Voltage Switching ApplicationsFeaturesPackage Dimensions High breakdown voltage(VCEO min=1800V).unit : mm Small Cob(typical Cob=1.4pF).2079D Full-isolation package.[2SC4636LS] High reliability(Adoption of HVP process).10.0 4.
2sc4635ls.pdf
Ordering number : ENN3704B2SC4635LSNPN Triple Diffused Planar Silicon Transistor2SC4635LS1500V / 20mA High-Voltage Amplifier,High-Voltage Switching ApplicationsFeaturesPackage Dimensions High breakdown voltage(VCEO min=1500V).unit : mm Small Cob(typical Cob=1.9pF).2079D Full-isolation package.[2SC4635LS] High reliability(Adoption of HVP process).10.0 4.
2sc4631.pdf
Ordering number:EN3700ANPN Triple Diffused Planar Silicon Transistor2SC4631900V/300mA High-Voltage Amplifier,High-Voltage Switching ApplicationsFeatures Package Dimensions High breakdown voltage (VCEO min=900V).unit:mm Small Cob (typical Cob=5.0pF).2079B Full-isolation package.[2SC4631] High reliability (Adoption of HVP process).4.510.02.83.20.90.
2sc4631ls.pdf
Ordering number : ENN3700B2SC4631LSNPN Triple Diffused Planar Silicon Transistor2SC4631LS900V / 300mA High-Voltage Amplifier,High-Voltage Switching ApplicationsFeaturesPackage Dimensions High breakdown voltage(VCEO min=900V).unit : mm Small Cob(typical Cob=5.0pF).2079D Full-isolation package.[2SC4631LS] High reliability(Adoption of HVP process).10.0 4.5
2sc4634ls.pdf
Ordering number : ENN3703B2SC4634LSNPN Triple Diffused Planar Silicon Transistor2SC4634LS1500V / 10mA High-Voltage Amplifier,High-Voltage Switching ApplicationsFeaturesPackage Dimensions High breakdown voltage(VCEO min=1500V).unit : mm Small Cob(typical Cob=1.5pF).2079D Full-isolation package.[2SC4634LS] High reliability(Adoption of HVP process).10.0 4.
2sc4632ls.pdf
Ordering number : ENN3701B2SC4632LSNPN Triple Diffused Planar Silicon Transistor2SC4632LS1200V / 10mA High-Voltage Amplifier,High-Voltage Switching ApplicationsFeaturesPackage Dimensions High breakdown voltage(VCEO min=1200V).unit : mm Small Cob(typical Cob=1.6pF).2079D Full-isolation package.[2SC4632LS] High reliability(Adoption of HVP process).10.0 4.
2sc4634.pdf
Ordering number:EN3703ANPN Triple Diffused Planar Silicon Transistor2SC46341500V/10mA High-Voltage Amplifier,High-Voltage Switching ApplicationsFeatures Package Dimensions High breakdown voltage (VCEO min=1500V).unit:mm Small Cob (typical Cob=1.5pF).2079B Full-isolation package.[2SC4634] High reliability (Adoption of HVP process).4.510.02.83.20.90
2sc4637ls.pdf
Ordering number : ENN3706B2SC4637LSNPN Triple Diffused Planar Silicon Transistor2SC4637LS1800V / 15mA High-Voltage Amplifier,High-Voltage Switching ApplicationsFeaturesPackage Dimensions High breakdown voltage(VCEO min=1800V).unit : mm Small Cob(typical Cob=1.8pF).2079D Full-isolation package.[2SC4637LS] High reliability(Adoption of HVP process).10.0 4.
2sc4632.pdf
Ordering number:EN3701ANPN Triple Diffused Planar Silicon Transistor2SC46321200V/10mA High-Voltage Amplifier,High-Voltage Switching ApplicationsFeatures Package Dimensions High breakdown voltage (VCEO min=1200V).unit:mm Small Cob (typical Cob=1.6pF).2079B Full-isolation package.[2SC4632] High reliability (Adoption of HVP process).4.510.02.83.20.90
2sc4630ls.pdf
Ordering number : ENN3699B2SC4630LSNPN Triple Diffused Planar Silicon Transistor2SC4630LS900V / 100mA High-Voltage Amplifier,High-Voltage Switching ApplicationsFeaturesPackage Dimensions High breakdown voltage(VCEO min=900V).unit : mm Small Cob(typical Cob=2.8pF).2079D Full isolation package.[2SC4630LS] High reliability(Adoption of HVP process).10.0 4.5
2sc4638.pdf
Power Transistors2SC4638Silicon NPN triple diffusion planar typeFor high breakdown voltage high-speed switchingUnit: mm10.0 0.2 4.2 0.2Features5.5 0.2 2.7 0.2High-speed switchingHigh collector to base voltage VCBOLow collector to emitter saturation voltage VCE(sat) 3.1 0.1Full-pack package which can be installed to the heat sink withone screwAbsolute Maxi
Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050