2SC4927 - описание и поиск аналогов

2SC4927 Silicon NPN Triple Diffused Application TV/character display horizontal deflection output Features High breakdown voltage VCES = 1500 V Built-in damper diode type Isolated package TO-3PFM Outline TO-3PFM 2 1 1. Base ID 2. Collector 3. Emitter 1 3 2 3 2SC4927 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to emitter voltag

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4927 DESCRIPTION High Breakdown Voltage- V = 1500V(Min) CES Built-in damper diode type Isolated package 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS TV/character display horizontal deflection output applications ABSOLUTE MAXIMUM RATINGS(

Ordering number EN4766 NPN Epitaxial Planar Silicon Transistor 2SC4920 Muting Circuit, Driver Applications Features Package Dimensions High DC current gain. unit mm On-chip bias resistance (R1=4.7k , R2=4.7k ). 2106A Very small-sized package permitting 2SC4920- [2SC4920] applied sets to be made smaller and slimmer. 0.75 0.3 0.6 Small ON resistance. 0 to 0.1

Ordering number EN4767 NPN Epitaxial Planar Silicon Transistor 2SC4921 Muting Circuit, Driver Applications Features Package Dimensions High DC current gain. unit mm On-chip bias resistance (R1=10k , R2=10k ). 2106A Very small-sized package permitting 2SC4921- [2SC4921] 0.75 applied sets to be made smaller and slimmer. 0.3 0.6 Small ON resistance. 0 to 0.1

Ordering number EN4768 NPN Epitaxial Planar Silicon Transistor 2SC4922 Muting Circuit, Driver Applications Features Package Dimensions High DC current gain. unit mm On-chip bias resistance (R1=47k , R2=47k ). 2106A Very small-sized package permitting 2SC4922- [2SC4922] 0.75 applied sets to be made smaller and slimmer. 0.3 0.6 Small ON resistance. 0 to 0.1

2SC4926 Silicon NPN Epitaxial Application VHF / UHF wide band amplifier Features High gain bandwidth product fT = 11 GHz Typ High gain, low noise figure PG = 16.5 dB Typ, NF = 1.1 dB Typ at f = 900 MHz Outline MPAK-4 2 3 1 1. Collector 4 2. Emitter 3. Base 4. Emitter 2SC4926 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage V

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4928 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 800V(Min) (BR)CEO High Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for character display horizontal deflection output applications. ABSOLUTE MAXIMUM RA

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC4924 DESCRIPTION High Breakdown Voltage- V(BR)CBO= 1500V(Min) High Switching Speed High Reliability APPLICATIONS Very high-definition CRT display horizontal deflection output applications ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltag

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4923 DESCRIPTION With TO-3PML package High speed High reliability High breakdown voltage APPLICATIONS High-definition CRT display horizontal deflection output applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-3PML) and symbol 3 Emitter Absolute