2SC495Y - описание и поиск аналогов

DATA SHEET SILICON TRANSISTOR 2SC4957 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD FEATURES PACKAGE DIMENSIONS Low Noise, High Gain in millimeters Low Voltage Operation Low Feedback Capacitance Cre = 0.3 pF TYP. 2.8 +0.2 0.3 1.5 +0.2 0.1 ORDERING INFORMATION PART QUANTITY PACKING STYLE NUMBER 2SC4957-T1 3 Kpcs/

DATA SHEET SILICON TRANSISTOR 2SC4954 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES PACKAGE DIMENSIONS Low Noise, High Gain in millimeters Low Voltage Operation Low Feedback Capacitance 2.8 0.2 +0.1 Cre = 0.3 pF TYP. 1.5 0.65 0.15 ORDERING INFORMATION 2 PART QUANTITY PACKING STYLE NUMBER 3 1 2SC4954-T1 3 Kpc

DATA SHEET SILICON TRANSISTOR 2SC4959 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS Low Noise, High Gain in millimeters Low Voltage Operation 2.1 0.1 Low Feedback Capacitance 1.25 0.1 Cre = 0.4 pF TYP. ORDERING INFORMATION 2 PART QUANTITY PACKING STYLE NUMBER 3 1 Embossed tape 8 mm wide. 2

DATA SHEET SILICON TRANSISTOR 2SC4956 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD FEATURES PACKAGE DIMENSIONS Low Noise, High Gain in millimeters Low Voltage Operation Low Feedback Capacitance Cre = 0.20 pF TYP. 2.8 +0.2 0.3 1.5 +0.2 0.1 ORDERING INFORMATION PART QUANTITY PACKING STYLE NUMBER 2SC4956-T1 3 Kpcs

DATA SHEET SILICON TRANSISTOR 2SC4955 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES Low Noise, High Gain PACKAGE DIMENSIONS Low Voltage Operation in millimeters Low Feedback Capacitance 2.8 0.2 Cre = 0.4 pF TYP. +0.1 1.5 0.65 0.15 ORDERING INFORMATION 2 PART QUANTITY PACKING STYLE NUMBER 3 1 2SC4955-T1 3 Kpcs/Re

DATA SHEET SILICON TRANSISTOR 2SC4958 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS Low Noise, High Gain in millimeters Low Voltage Operation 2.1 0.1 Low Feedback Capacitance 1.25 0.1 Cre = 0.3 pF TYP. ORDERING INFORMATION 2 PART QUANTITY PACKING STYLE NUMBER 3 1 Embossed tape 8 mm wide. 2

Power Transistors 2SC4953 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit mm 4.6 0.2 Features 9.9 0.3 2.9 0.2 High-speed switching High collector to base voltage VCBO 3.2 0.1 Wide area of safe operation (ASO) Satisfactory linearity of foward current transfer ratio hFE Dielectric breakdown voltage of the package > 5kV 1.4

SMD Type Transistors NPN Transistors 2SC4954 SOT-23 Unit mm +0.1 2.9 -0.1 0.4+0.1 -0.1 3 Features Collector Current Capability IC=10mA 1 2 Collector Emitter Voltage VCEO=6V +0.1 +0.05 0.95 -0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 9 Collector

SMD Type Transistors NPN Transistors 2SC4955 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=30mA 1 2 Collector Emitter Voltage VCEO=6V +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 9 Collector

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4953 DESCRIPTION Silicon NPN triple diffusion planar type High Speed Switching 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high breakdown voltage high speed switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE U