Transistor2SC4968Silicon NPN epitaxial planer typeFor UHF band low-noise amplificationUnit: mm5.0 0.2 4.0 0.2FeaturesLow noise figure NF.High gain.High transition frequency fT.Absolute Maximum Ratings (Ta=25C)+0.2 +0.2Parameter Symbol Ratings Unit0.45 0.1 0.45 0.1Collector to base voltage VCBO 15 V 1.27 1.27Collector to emitter voltage VCEO 10 VEmitte

Transistor2SC4968Silicon NPN epitaxial planer typeFor UHF band low-noise amplificationUnit: mm5.0 0.2 4.0 0.2FeaturesLow noise figure NF.High gain.High transition frequency fT.Absolute Maximum Ratings (Ta=25C)+0.2 +0.2Parameter Symbol Ratings Unit0.45 0.1 0.45 0.1Collector to base voltage VCBO 15 V 1.27 1.27Collector to emitter voltage VCEO 10 VEmitte

Power Transistors2SC4960, 2SC4960ASilicon NPN triple diffusion planar typeFor power switchingUnit: mmFeatures15.0 0.3 5.0 0.2High-speed switching11.0 0.2 3.2High collector to base voltage VCBOSatisfactory linearity of foward current transfer ratio hFE 3.2 0.1Full-pack package with outstanding insulation, which can be in-stalled to the heat sink with one screw

2SC4964Silicon NPN EpitaxialADE-208-0051st. EditionApplicationVHF / UHF RF switchFeatures Low Ron and high performance for RF switch. Capable of high density mounting.OutlineMPAK311. Emitter2. Base23. Collector2SC4964Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 12 VCollector to emitter voltage VCEO 8

2SC4965Silicon NPN EpitaxialADE-208-0061st. EditionApplicationVHF / UHF RF switchFeatures Low Ron and high performance for RF switch. Capable of high density mounting.Outline2SC4965Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 12 VCollector to emitter voltage VCEO 8 VEmitter to base voltage VEBO 3 VCollector cu

JMnic Product Specification Silicon NPN Power Transistors 2SC4963 DESCRIPTION With TO-3PFM package High breakdown voltage High speed switching Built-in damper diode APPLICATIONS Color TV horizontal deflection output Color display horizontal deflection output PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-3PFM) and symbol 3 Emitter

SMD Type TransistorsNPN Transistors2SC4964SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13 Features Collector Current Capability IC=100mA1 2 Collector Emitter Voltage VCEO=8V+0.050.95+0.1-0.1 0.1 -0.011.9+0.1-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 12 Collect

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4963DESCRIPTIONHigh Breakdown VoltageHigh Switching SpeedBuilt in damper diode100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSVery high-definition CRT display horizontal deflectionoutput applicationsABSOLUTE MAXIMUM RATINGS(T =25)a

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4960DESCRIPTIONHigh Collector-Base Breakdown Voltage-: V = 900V(Min)(BR)CBOHigh Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power switching applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETE