Справочник транзисторов. 2SC498

 

Биполярный транзистор 2SC498 - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: 2SC498
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 0.6 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 80 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
   Макcимальный постоянный ток коллектора (Ic): 0.8 A
   Предельная температура PN-перехода (Tj): 150 °C
   Граничная частота коэффициента передачи тока (ft): 30 MHz
   Ёмкость коллекторного перехода (Cc): 30 pf
   Статический коэффициент передачи тока (hfe): 40
   Корпус транзистора: TO39

 Аналоги (замена) для 2SC498

 

 

2SC498 Datasheet (PDF)

 0.1. Size:48K  sanyo
2sc4984.pdf

2SC498
2SC498

Ordering number:ENN4633APNP/NPN Epitaxial Planar Silicon Transistors2SA1882/2SC4984Low-FrequencyGeneral-Purpose Amplifier ApplicationsApplcations Package Dimensions Low-frequency power amplifier applications.unit:mm Medium-speed switching.2038A Small-sized motor drivers.[2SA1882/2SC4984]4.51.51.6Features Large current capacity. Low collector-to-e

 0.2. Size:109K  sanyo
2sc4987.pdf

2SC498
2SC498

Ordering number:EN4723NPN Epitaxial Planar Silicon Transistor2SC4987High-Speed Switching ApplicationsFeatures Package Dimensions Fast switching speed.unit:mm Low collector saturation voltage.2106A High gain-bandwidth product.[2SC4987] Small collector capacitance. 0.750.30.6 Very small-sized package permitting 2SC4987-applied sets to be made small and

 0.3. Size:144K  sanyo
2sc4983.pdf

2SC498
2SC498

Ordering number:4661PNP/NPN Epitaxial Planar Silicon Transistor2SA1881/2SC4983Low-FrequencyGeneral-Purpose Amplifier ApplicationsFeatures Package Dimensions AF power amplifier, medium-speed switching, small-unit:mmsized motor drivers and LED drivers.2018B[2SA1881/2SC4983]Features Large current capacity. Low collector-to-emitter saturation voltage. Very sm

 0.4. Size:40K  panasonic
2sc4985.pdf

2SC498
2SC498

Power Transistors2SC4985Silicon NPN triple diffusion planar typeFor high breakdown voltage high-speed switchingUnit: mm7.5 0.2 4.5 0.2Features90High collector to base voltage VCBO0.65 0.1 0.85 0.1High collector to emitter VCEOAllowing automatic insertion with radial taping1.0 0.10.8C 0.8C0.7 0.1 0.7 0.1Absolute Maximum Ratings (Ta=25C)Parameter

 0.5. Size:47K  hitachi
2sc4988.pdf

2SC498
2SC498

2SC4988Silicon NPN EpitaxialADE-208-0041st. EditionApplicationVHF / UHF wide band amplifierFeatures High gain bandwidth productfT = 8.5 GHz Typ High gain, low noise figurePG = 10.5 dB Typ, NF = 1.3 dB Typ at f = 900 MHzOutlineUPAK1234 1. Base2. Collector3. Emitter4. Collector (Flange)2SC4988Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratin

 0.6. Size:148K  jmnic
2sc4980.pdf

2SC498
2SC498

JMnic Product Specification Silicon NPN Power Transistors 2SC4980 DESCRIPTION With ITO-220 package Switching power transistor Low collector saturation voltage PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (ITO-220) and symbol 3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-base voltage Open em

 0.7. Size:147K  jmnic
2sc4982.pdf

2SC498
2SC498

JMnic Product Specification Silicon NPN Power Transistors 2SC4982 DESCRIPTION With ITO-220 package Switching power transistor Low collector saturation voltage PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (ITO-220) and symbol 3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-base voltage Open em

 0.8. Size:150K  jmnic
2sc4981.pdf

2SC498
2SC498

JMnic Product Specification Silicon NPN Power Transistors 2SC4981 DESCRIPTION With ITO-220 package Switching power transistor Low collector saturation voltage PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (ITO-220) and symbol 3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-base voltage Open em

 0.9. Size:181K  tysemi
2sc4984.pdf

2SC498
2SC498

SMD TypeSMD TypeSMD TypeSMD TypeSMD TypeSMD Type ICSMD Type ICSMD Type TransistorsSMD Type TransistorsSMD Type TransistorsProduct specification2SC4984FeaturesLarge current capacity.Low collector-to-emitter saturation voltage.Absolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-base voltage VCBO 15 VCollector-emitter voltage VCEO 15 VEmitter

 0.10. Size:1145K  kexin
2sc4984.pdf

2SC498
2SC498

SMD Type TransistorsNPN Transistors2SC4984SOT-89Unit:mm1.70 0.1 Features Collector Current Capability IC=1.5A Collector Emitter Voltage VCEO=15V Complementary to 2SA18820.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 15 Collector - Emitter Voltage VCEO 1

 0.11. Size:1081K  kexin
2sc4983.pdf

2SC498
2SC498

SMD Type TransistorsNPN Transistors2SC4983SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.13 Features Collector Current Capability IC=1A Collector Emitter Voltage VCEO=15V1 2+0.1+0.050.95 -0.1 0.1 -0.01 Complement to 2SA1881+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Ba

 0.12. Size:973K  kexin
2sc4988.pdf

2SC498
2SC498

SMD Type TransistorsNPN Transistors2SC4988SOT-89Unit:mm1.70 0.1 Features Collector Current Capability IC=0.1A Collector Emitter Voltage VCEO=9V0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 15 Collector - Emitter Voltage VCEO 9 V Emitter - Base Voltage VEBO

 0.13. Size:172K  inchange semiconductor
2sc4980.pdf

2SC498
2SC498

INCHANGE Semiconductorisc Silicon NPN Power Transistors 2SC4980DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 80V(Min)CEO(SUS)Collector Current-I = 5A(Max.)CLow Collector Saturation Voltage100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in drivers such as DC/DC convert

 0.14. Size:174K  inchange semiconductor
2sc4988.pdf

2SC498
2SC498

INCHANGE Semiconductorisc Silicon NPN RF Transistor 2SC4988DESCRIPTIONHigh Gain Bandwidth Productf = 8.5 GHz TYP.THigh Gain, Low Noise FigurePG = 10.5 dB TYP. , NF = 1.3 dB TYP. @ f = 900 MHz100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in VHF ~ UHF wide band amplifier.ABSOLU

 0.15. Size:172K  inchange semiconductor
2sc4982.pdf

2SC498
2SC498

INCHANGE Semiconductorisc Silicon NPN Power Transistors 2SC4982DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 80V(Min)CEO(SUS)Collector Current-I = 10A(Max.)CLow Collector Saturation Voltage100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in drivers such as DC/DC conver

 0.16. Size:171K  inchange semiconductor
2sc4981.pdf

2SC498
2SC498

INCHANGE Semiconductorisc Silicon NPN Power Transistors 2SC4981DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 80V(Min)CEO(SUS)Low Collector Saturation Voltage100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in drivers such as DC/DC convertersand actuators.ABSOLUTE MAXIMUM

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