Справочник транзисторов. 2SC5023C

 

Биполярный транзистор 2SC5023C - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: 2SC5023C
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 8 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 100 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 100 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
   Макcимальный постоянный ток коллектора (Ic): 0.2 A
   Предельная температура PN-перехода (Tj): 150 °C
   Граничная частота коэффициента передачи тока (ft): 1100 MHz
   Ёмкость коллекторного перехода (Cc): 6 pf
   Статический коэффициент передачи тока (hfe): 100
   Корпус транзистора: TO126FM

 Аналоги (замена) для 2SC5023C

 

 

2SC5023C Datasheet (PDF)

 7.1. Size:11K  hitachi
2sc5023.pdf

2SC5023C
2SC5023C

2SC5023Silicon NPN EpitaxialApplicationTO126FMHigh frequency amplifierFeatures Excellent high frequency characteristicsfT = 1000 MHz typ High breakdown voltage and low outputcapacitance12VCEO = 100 V, Cob = 4.5 pF typ31. Emitter Suitable for wide band video amplifier2. Collector3. BaseAbsolute Maximum Ratings (Ta = 25C)Item Symbol Rating Unit

 8.2. Size:218K  toshiba
2sc5028.pdf

2SC5023C
2SC5023C

 8.3. Size:241K  toshiba
2sc5027.pdf

2SC5023C
2SC5023C

 8.4. Size:212K  toshiba
2sc5029.pdf

2SC5023C
2SC5023C

 8.5. Size:41K  renesas
2sc5022.pdf

2SC5023C
2SC5023C

To all our customersRegarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp.The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAM

 8.6. Size:41K  panasonic
2sc5026 e.pdf

2SC5023C
2SC5023C

Transistor2SC5026Silicon NPN epitaxial planer typeFor low-frequency output amplificationUnit: mmComplementary to 2SA18901.5 0.14.5 0.11.6 0.2FeaturesLow collector to emitter saturation voltage VCE(sat).High collector to emitter voltage VCEO.45Mini Power type package, allowing downsizing of the equipmentand automatic insertion through the tape packing and the

 8.7. Size:37K  panasonic
2sc5026.pdf

2SC5023C
2SC5023C

Transistor2SC5026Silicon NPN epitaxial planer typeFor low-frequency output amplificationUnit: mmComplementary to 2SA18901.5 0.14.5 0.11.6 0.2FeaturesLow collector to emitter saturation voltage VCE(sat).High collector to emitter voltage VCEO.45Mini Power type package, allowing downsizing of the equipmentand automatic insertion through the tape packing and the

 8.8. Size:198K  utc
2sc5027e.pdf

2SC5023C
2SC5023C

UNISONIC TECHNOLOGIES CO., LTD 2SC5027E NPN SILICON TRANSISTOR HIGH VOLTAGE AND HIGH RELIABILITY TRANSISTOR . FEATURES * High Speed Switching * Wide SOA ORDERING INFORMATION Order Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 2SC5027EL-x-TA3-T 2SC5027EL-x-TA3-T TO-220 B C E Tube2SC5027EL-x-TF2-T 2SC5027EL-x-TF2-T TO-220F2 B C E Tube2SC5027EL-

 8.9. Size:49K  utc
2sc5027.pdf

2SC5023C
2SC5023C

UNISONIC TECHNOLOGIES CO., LTD 2SC5027 NPN SILICON TRANSISTOR HIGH VOLTAGE AND HIGH RELIABILITY . 1 FEATURES TO-220* High Voltage (VCEO = 800V) * High Speed Switching * Wide SOA 1TO-220F*Pb-free plating product number: 2SC5027L ORDERING INFORMATION Order Number Pin Assignment Package Packing Normal Lead Free Plating 1 2 32SC5027-x-TA3-T 2SC5027L-x-TA3-T TO-

 8.10. Size:11K  hitachi
2sc5025.pdf

2SC5023C
2SC5023C

2SC5025Silicon NPN EpitaxialApplicationTO126FMHigh frequency amplifierFeatures Excellent high frequency characteristicsfT = 1.2 GHz typ Low output capacitanceCob = 5.0 pF typ1231. Emitter2. Collector3. BaseAbsolute Maximum Ratings (Ta = 25C)Item Symbol Rating Unit

 8.11. Size:42K  hitachi
2sc5022.pdf

2SC5023C
2SC5023C

To all our customersRegarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp.The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAM

 8.12. Size:236K  nell
2sc5027af.pdf

2SC5023C
2SC5023C

RoHS 2SC5027 Series RoHS SEMICONDUCTORNell High Power ProductsSilicon NPN triple diffusion planar transistor3A/ 800V / 50WFEATURESHigh-speed switchingHigh breakdown voltage and high reliabilityCWide SOA (Safe Operation Area)TO-220 package which can be installed to the heat sink with one screwBBC APPLICATIONSCEESwitching regulator and general purposeTO-2

 8.13. Size:236K  nell
2sc5027a.pdf

2SC5023C
2SC5023C

RoHS 2SC5027 Series RoHS SEMICONDUCTORNell High Power ProductsSilicon NPN triple diffusion planar transistor3A/ 800V / 50WFEATURESHigh-speed switchingHigh breakdown voltage and high reliabilityCWide SOA (Safe Operation Area)TO-220 package which can be installed to the heat sink with one screwBBC APPLICATIONSCEESwitching regulator and general purposeTO-2

 8.14. Size:890K  kexin
2sc5026.pdf

2SC5023C
2SC5023C

SMD Type TransistorsNPN Transistors2SC50261.70 0.1 Features Low collector to emitter saturation voltage VCE(sat). High collector to emitter voltage VCEO. Complementary to 2SA18900.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 80 Collector - Emitter Voltage V

 8.15. Size:2005K  cn sps
2sc5027t1tl.pdf

2SC5023C
2SC5023C

2SC5027T1TLELECTRICAL CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT BV Emitter -Base Breakdown Voltage I = 1mA; I = 0 7 V EBO E CBV Collector- Emitter Breakdown Voltage I = 5mA; I = 0 800 V CEO C BBV Collector- Base Breakdown Voltage I = 1mA; I = 0 850 V CBO C ECollector-Emitter Saturation Voltage I = 1.5A; I = 0.3A 2.0 V

 8.16. Size:405K  cn sptech
2sc5027.pdf

2SC5023C
2SC5023C

 8.17. Size:213K  inchange semiconductor
2sc5027.pdf

2SC5023C
2SC5023C

isc Silicon NPN Power Transistor 2SC5027DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 800V(Min)(BR)CEOHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 1100 VCBOV Collector-Emitter Voltage 800 VCEOV Emitter-Base Volt

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