2SC5024 - Даташиты. Аналоги. Основные параметры

To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAM

Transistor 2SC5026 Silicon NPN epitaxial planer type For low-frequency output amplification Unit mm Complementary to 2SA1890 1.5 0.1 4.5 0.1 1.6 0.2 Features Low collector to emitter saturation voltage VCE(sat). High collector to emitter voltage VCEO. 45 Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the

Transistor 2SC5026 Silicon NPN epitaxial planer type For low-frequency output amplification Unit mm Complementary to 2SA1890 1.5 0.1 4.5 0.1 1.6 0.2 Features Low collector to emitter saturation voltage VCE(sat). High collector to emitter voltage VCEO. 45 Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the

UNISONIC TECHNOLOGIES CO., LTD 2SC5027E NPN SILICON TRANSISTOR HIGH VOLTAGE AND HIGH RELIABILITY TRANSISTOR . FEATURES * High Speed Switching * Wide SOA ORDERING INFORMATION Order Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 2SC5027EL-x-TA3-T 2SC5027EL-x-TA3-T TO-220 B C E Tube 2SC5027EL-x-TF2-T 2SC5027EL-x-TF2-T TO-220F2 B C E Tube 2SC5027EL-

UNISONIC TECHNOLOGIES CO., LTD 2SC5027 NPN SILICON TRANSISTOR HIGH VOLTAGE AND HIGH RELIABILITY . 1 FEATURES TO-220 * High Voltage (VCEO = 800V) * High Speed Switching * Wide SOA 1 TO-220F *Pb-free plating product number 2SC5027L ORDERING INFORMATION Order Number Pin Assignment Package Packing Normal Lead Free Plating 1 2 3 2SC5027-x-TA3-T 2SC5027L-x-TA3-T TO-

2SC5023 Silicon NPN Epitaxial Application TO 126FM High frequency amplifier Features Excellent high frequency characteristics fT = 1000 MHz typ High breakdown voltage and low output capacitance 1 2 VCEO = 100 V, Cob = 4.5 pF typ 3 1. Emitter Suitable for wide band video amplifier 2. Collector 3. Base Absolute Maximum Ratings (Ta = 25 C) Item Symbol Rating Unit

To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAM

RoHS 2SC5027 Series RoHS SEMICONDUCTOR Nell High Power Products Silicon NPN triple diffusion planar transistor 3A/ 800V / 50W FEATURES High-speed switching High breakdown voltage and high reliability C Wide SOA (Safe Operation Area) TO-220 package which can be installed to the heat sink with one screw B B C APPLICATIONS C E E Switching regulator and general purpose TO-2

RoHS 2SC5027 Series RoHS SEMICONDUCTOR Nell High Power Products Silicon NPN triple diffusion planar transistor 3A/ 800V / 50W FEATURES High-speed switching High breakdown voltage and high reliability C Wide SOA (Safe Operation Area) TO-220 package which can be installed to the heat sink with one screw B B C APPLICATIONS C E E Switching regulator and general purpose TO-2

SMD Type Transistors NPN Transistors 2SC5026 1.70 0.1 Features Low collector to emitter saturation voltage VCE(sat). High collector to emitter voltage VCEO. Complementary to 2SA1890 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 80 Collector - Emitter Voltage V

2SC5027T1TL ELECTRICAL CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT BV Emitter -Base Breakdown Voltage I = 1mA; I = 0 7 V EBO E C BV Collector- Emitter Breakdown Voltage I = 5mA; I = 0 800 V CEO C B BV Collector- Base Breakdown Voltage I = 1mA; I = 0 850 V CBO C E Collector-Emitter Saturation Voltage I = 1.5A; I = 0.3A 2.0 V

isc Silicon NPN Power Transistor 2SC5027 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 800V(Min) (BR)CEO High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 1100 V CBO V Collector-Emitter Voltage 800 V CEO V Emitter-Base Volt