Справочник транзисторов. 2SC5054R

 

Биполярный транзистор 2SC5054R - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: 2SC5054R
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 10 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 500 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 400 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 7 V
   Макcимальный постоянный ток коллектора (Ic): 0.5 A
   Предельная температура PN-перехода (Tj): 150 °C
   Статический коэффициент передачи тока (hfe): 20
   Корпус транзистора: I-PAK

 Аналоги (замена) для 2SC5054R

 

 

2SC5054R Datasheet (PDF)

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2sc5052.pdf

2SC5054R
2SC5054R

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2sc5053.pdf

2SC5054R
2SC5054R

2SC5053 Transistors Medium power transistor (50V, 1A) 2SC5053 Features Dimensions (Unit : mm) 1) Low saturation voltage, typically VCE(sat) = 0.12V at IC / MPT3IB = 500mA / 50mA 2) PC=2W (on 40400.7mm ceramic board) 3) Complements the 2SA1900 (1)Base(2)Collector (3)Emitter Absolute maximum ratings (Ta=25C) Parameter Symbol Limits UnitVCBO 60 VCollector-b

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2sa1900 2sc5053.pdf

2SC5054R
2SC5054R

2SA1900TransistorsTransistors2SC5053(96-115-B352)(96-196-D352)297Appendix NotesNo technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD.The contents described herein are subject to change without notice. The specifications for theproduct described in this document are for reference onl

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2sc5050.pdf

2SC5054R
2SC5054R

2SC5050Silicon NPN EpitaxialApplicationVHF / UHF wide band amplifierFeatures High gain bandwidth productfT = 11 GHz Typ High gain, low noise figurePG = 14.0 dB Typ, NF = 1.1 dB Typ at f = 900 MHzOutlineMPAK311. Emitter2. Base23. Collector2SC5050Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 15 VCollect

 8.6. Size:24K  hitachi
2sc5051.pdf

2SC5054R
2SC5054R

2SC5051Silicon NPN EpitaxialApplicationVHF / UHF wide band amplifierFeatures High gain bandwidth productfT = 11 GHz Typ High gain, low noise figurePG = 14.5 dB Typ, NF = 1.1 dB Typ at f = 900 MHzOutlineCMPAK311. Emitter2. Base23. Collector2SC5051Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 15 VCollec

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2sc5053.pdf

2SC5054R
2SC5054R

SMD Type TransistorsNPN Transistors2SC5053SOT-89Unit:mm1.70 0.1 Features Collector Current Capability IC=2A Collector Emitter Voltage VCEO=50V Complementary to 2SA19000.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector - Emitter Voltage VCEO 50

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2sc5050.pdf

2SC5054R

SMD Type TransistorsNPN Transistors2SC5050SOT-23Unit: mm2.9+0.1-0.1+0.10.4-0.13 Features Collector Current Capability IC=50mA1 2 Collector Emitter Voltage VCEO=8V+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 15 Collect

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2sc5051.pdf

2SC5054R

SMD Type TransistorsNPN Transistors2SC5051 Features Collector Current Capability IC=50mA Collector Emitter Voltage VCEO=8V1.Base2.Emitter3.Collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 15 Collector - Emitter Voltage VCEO 8 V Emitter - Base Voltage VEBO 1.5 Collector Current - Continuous IC 50 mA

 8.10. Size:387K  cn shikues
2sc5053r.pdf

2SC5054R
2SC5054R

2SC5053RNPN-Silicon General use Transistors1W 1.5A25V 4ApplicationsCan be used for switching and amplifying in various electrical and electronic circuit. 1 2 3 SOT-89 Maximum ratingsParameters Symbol Rating UnitMarking V VCEO 25Collector-emitter voltage (IB=0) 2SC5053R=GDVCBO 40 VCollector-base voltageIE=0 VEBO 6 VEmitter-base voltageIC=0

Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: BUL53A | 2SC2481 | 2SC2297 | 4126 | LMBT3906TT3G | 2SC3572

 

 
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