2SC509O - параметры, поиск аналогов, даташиты транзистора

Биполярный транзистор 2SC509O Даташит. Аналоги

   Наименование производителя: 2SC509O
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 0.6 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 35 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 30 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
   Макcимальный постоянный ток коллектора (Ic): 0.5 A
   Предельная температура PN-перехода (Tj): 150 °C
   Граничная частота коэффициента передачи тока (ft): 100(typ) MHz
   Ёмкость коллекторного перехода (Cc): 11 pf
   Статический коэффициент передачи тока (hfe): 70
   Корпус транзистора: TO92

Аналоги (замена) для 2SC509O

- подбор биполярного транзистора по параметрам

2SC509O Datasheet (PDF)

8.1. Size:126K 1
2sc509.pdf pdf_icon

http://www.Datasheet4U.comhttp://www.Datasheet4U.comhttp://www.Datasheet4U.comhttp://www.Datasheet4U.com

8.2. Size:743K 1
2sc500 2sc501 2sc502 2sc503 2sc504 2sc505 2sc506 2sc507 2sc508 2sc509 2sc510 2sc511.pdf pdf_icon

8.3. Size:120K 1
2sc509gtm.pdf pdf_icon

8.4. Size:473K toshiba
2sc5097.pdf pdf_icon

2SC5097 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5097 VHF~UHF Band Low Noise Amplifier Applications Unit: mm Low noise figure, high gain. NF = 1.8dB, |S |2 = 10dB (f = 2 GHz) 21eMaximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 20 VCollector-emitter voltage VCEO 10 VEmitter-base voltage VEBO 1.5 V

8.5. Size:469K toshiba
2sc5091.pdf pdf_icon

2SC5091 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5091 VHF~UHF Band Low Noise Amplifier Applications Unit: mm Low noise figure, high gain. NF = 1.1dB, |S |2 = 13dB (f = 1 GHz) 21eMaximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 20 VCollector-emitter voltage VCEO 10 VEmitter-base voltage VEBO 1.5 V

8.6. Size:125K toshiba
2sc5096ft.pdf pdf_icon

2SC5096FT TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5096FT VHF~UHF Band Low Noise Amplifier Applications Unit: mm Low noise figure, high gain. NF = 1.8dB, |S |2 = 7.5dB (f = 2 GHz) 21eMaximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 20 VCollector-emitter voltage VCEO 8 VEmitter-base voltage VEBO 1.

8.7. Size:296K toshiba
2sc5094.pdf pdf_icon

2SC5094 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5094 VHF~UHF Band Low Noise Amplifier Applications Unit: mm Low noise figure, high gain. NF = 1.8dB, |S |2 = 7.5dB (f = 2 GHz) 21eMaximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 20 VCollector-emitter voltage VCEO 10 VEmitter-base voltage VEBO 1.5 V

8.8. Size:466K toshiba
2sc5090.pdf pdf_icon

2SC5090 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5090 VHF~UHF Band Low Noise Amplifier Applications Unit: mm Low noise figure, high gain. NF = 1.1dB, |S |2 = 13dB (f = 1 GHz) 21eMaximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 20 VCollector-emitter voltage VCEO 10 VEmitter-base voltage VEBO 1.5 V

8.9. Size:296K toshiba
2sc5096.pdf pdf_icon

2SC5096 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5096 VHF~UHF Band Low Noise Amplifier Applications Unit: mm Low noise figure, high gain. NF = 1.8dB, |S |2 = 7.5dB (f = 2 GHz) 21eMaximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 20 VCollector-emitter voltage VCEO 10 VEmitter-base voltage VEBO 1.5 V

8.10. Size:300K toshiba
2sc5093.pdf pdf_icon

2SC5093 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5093 VHF~UHF Band Low Noise Amplifier Applications Unit: mm Low noise figure, high gain. NF = 1.8dB, |S |2 = 9.5dB (f = 2 GHz) 21eMaximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 20 VCollector-emitter voltage VCEO 10 VEmitter-base voltage VEBO 1.5 V

8.11. Size:298K toshiba
2sc5098.pdf pdf_icon

2SC5098 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5098 VHF~UHF Band Low Noise Amplifier Applications Unit: mm Low noise figure, high gain. NF = 1.8dB, |S |2 = 10dB (f = 2 GHz) 21eMaximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 20 VCollector-emitter voltage VCEO 10 VEmitter-base voltage VEBO 1.5 V

8.12. Size:125K toshiba
2sc5091ft.pdf pdf_icon

2SC5091FT TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5091FT VHF~UHF Band Low Noise Amplifier Applications Unit: mm Low noise figure, high gain. NF = 1.1dB, |S |2 = 13dB (f = 1 GHz) 21eMaximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 20 VCollector-emitter voltage VCEO 8 VEmitter-base voltage VEBO 1.5

8.13. Size:475K toshiba
2sc5092.pdf pdf_icon

2SC5092 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5092 VHF~UHF Band Low Noise Amplifier Applications Unit: mm Low noise figure, high gain. NF = 1.8dB, |S |2 = 9.5dB (f = 2 GHz) 21eMaximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 20 VCollector-emitter voltage VCEO 10 VEmitter-base voltage VEBO 1.5 V

8.14. Size:295K toshiba
2sc5095.pdf pdf_icon

2SC5095 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5095 VHF~UHF Band Low Noise Amplifier Applications Unit: mm Low noise figure, high gain. NF = 1.8dB, |S |2 = 7.5dB (f = 2 GHz) 21eMaximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 20 VCollector-emitter voltage VCEO 10 VEmitter-base voltage VEBO 1.5 V

8.15. Size:188K jmnic
2sc5099.pdf pdf_icon

JMnic Product SpecificationSilicon NPN Power Transistors 2SC5099 DESCRIPTION With TO-3PML package Complement to type 2SA1907 APPLICATIONS Audio and general purpose PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-3PML) and symbol 3 EmitterAbsolute maximum ratings(Tc=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-base voltag

8.16. Size:24K sanken-ele
2sc5099.pdf pdf_icon

2SC5099Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1907)Application : Audio and General PurposeExternal Dimensions FM100(TO3PF) Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C)Symbol 2SC5099 Unit Symbol Conditions 2SC5099 Unit0.20.2 5.515.60.2VCBO 120 V ICBO VCB=120V 10max A 3.45VCEO 80 V IEBO VEB=6V 10max AVE

8.17. Size:1529K kexin
2sc5094.pdf pdf_icon

SMD Type TransistorsNPN Transistors2SC5094SOT-23Unit: mm2.9+0.1-0.1+0.10.4-0.13 Features Collector Current Capability IC=15mA1 2 Collector Emitter Voltage VCEO=10V+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Collec

8.18. Size:185K inchange semiconductor
2sc5090.pdf pdf_icon

INCHANGE Semiconductorisc Silicon NPN RF Transistor 2SC5090DESCRIPTIONHigh Gain Bandwidth Productf = 10 GHz TYP.THigh Gain, Low Noise FigureS 2 = 13 dB TYP., NF = 1.1 dB TYP @ f = 1 GHz21e100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for VHF~UHF band low noise amplifier applica

8.19. Size:195K inchange semiconductor
2sc5099.pdf pdf_icon

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC5099DESCRIPTIONCollector-Emitter Breakdown Voltage-V = 80V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SA1907100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio and general purpose applicationsABSOLUTE MAXIMUM

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